SB140E-G Schottky Diode Equivalent & Substitute Parts

Part Overview

The SB140E-G is an active-status Schottky rectifier diode manufactured by Comchip Technology, rated for 40 V DC reverse voltage and 1 A average rectified current in a through-hole DO-41 package. This component is used in power supply circuits, voltage regulation, and fast-switching applications requiring low forward voltage drop and rapid recovery characteristics.

Substitute parts are identified when design requirements permit alternative manufacturers or package variants while maintaining electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

SB140E-G
Comchip TechnologyIn Stock: 4772SB140E-G Datasheet
SB140E-G
Current Part
1N5819
Microchip TechnologyIn Stock: 304361N5819 Datasheet
1N5819
MFR Recommended
1N5819-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 208191N5819-E3/73 Datasheet
1N5819-E3/73
MFR Recommended
SB140-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 6356SB140-E3/73 Datasheet
SB140-E3/73
MFR Recommended
SR104 A0G
Taiwan Semiconductor CorporationIn Stock: 10527SR104 A0G Datasheet
SR104 A0G
MFR Recommended
SB140-T
Diodes IncorporatedIn Stock: 5284SB140-T Datasheet
SB140-T
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) ns
Current - Reverse Leakage @ Vr 500 µA @ 40 V µA
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -65°C to 125°C °C
Technology Schottky
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Mandatory Matching Parameters:

  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V or higher
  • Current - Average Rectified (Io): 1 A
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial variants
  • Operating Temperature - Junction: -65°C to 125°C minimum range

Allowable Parameter Variations:

  • Voltage - Forward (Vf) (Max) @ If: 480 mV to 600 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 50 µA to 1 mA @ rated voltage
  • Capacitance @ Vr, F: Not a limiting factor for substitution

Compliance Requirements:

  • RoHS3 Compliant status
  • REACH Unaffected status
  • Active product status

Substitute parts are classified as either MFR Recommended (manufacturer-endorsed alternatives) or Parametric Equivalent (parts meeting all electrical and mechanical criteria).

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] Reverse Leakage @ Vr [µA] Package Temp Range [°C] RoHS3
SB140E-G Comchip Technology 40 1 500 500 @ 40V DO-41 -65 to 125 Yes
1N5819 Microchip Technology 45 1 490 50 @ 45V DO-41 -65 to 125
1N5819-E3/73 Vishay General Semiconductor - Diodes Division 40 1 600 1000 @ 40V DO-204AL (DO-41) -65 to 125 Yes
SB140-E3/73 Vishay General Semiconductor - Diodes Division 40 1 480 500 @ 40V DO-204AL (DO-41) -65 to 125 Yes
SR104 A0G Taiwan Semiconductor Corporation 40 1 550 500 @ 40V DO-204AL (DO-41) -55 to 125 Yes
SB140-T Diodes Incorporated 40 1 500 500 @ 40V DO-41 -65 to 125 Yes

Engineering Selection Recommendations

MFR Recommended Substitutes:

1N5819 (Microchip Technology): This part exceeds the minimum reverse voltage requirement at 45 V and delivers superior reverse leakage performance (50 µA vs. 500 µA). Forward voltage is lower at 490 mV, reducing power dissipation. Suitable for applications where enhanced voltage margin and lower leakage are beneficial. Package compatibility confirmed as DO-41.

1N5819-E3/73 (Vishay General Semiconductor - Diodes Division): Matches the 40 V reverse voltage specification exactly. Forward voltage is higher at 600 mV, and reverse leakage is elevated at 1 mA. Supplied in DO-204AL (DO-41) package variant. RoHS3 compliant. Appropriate for designs where package form factor flexibility is required.

SB140-E3/73 (Vishay General Semiconductor - Diodes Division): Direct electrical equivalent with identical 40 V rating and 500 µA reverse leakage. Forward voltage is optimized at 480 mV. Supplied in DO-204AL (DO-41) package. RoHS3 compliant. Recommended for direct replacement where Vishay sourcing is preferred.

Parametric Equivalent:

SR104 A0G (Taiwan Semiconductor Corporation): Meets all electrical specifications with 40 V reverse voltage and 1 A current rating. Forward voltage at 550 mV is within acceptable range. Operating temperature range is -55°C to 125°C, which is narrower at the lower bound than the original part. RoHS3 compliant. Suitable for applications not requiring extended low-temperature operation below -55°C.

SB140-T (Diodes Incorporated): Parametric equivalent with identical electrical characteristics to the main part: 40 V reverse voltage, 500 mV forward voltage, and 500 µA reverse leakage. Supplied in DO-41 package. RoHS3 compliant. Recommended for applications requiring exact parameter matching with alternative manufacturer sourcing.

All substitute parts maintain active product status and REACH Unaffected compliance.

Frequently Asked Questions (FAQ)

Q: Can I use 1N5819 in place of SB140E-G?

A: Yes. The 1N5819 is a MFR recommended substitute. It provides 45 V reverse voltage (exceeding the 40 V requirement), maintains 1 A current rating, and operates within the same temperature range. Forward voltage is lower at 490 mV, and reverse leakage is significantly lower at 50 µA. Both parts use DO-41 through-hole packages. The higher voltage rating and lower leakage make this a suitable upgrade for most applications.

Q: What is the difference between DO-41 and DO-204AL packages?

A: DO-41 and DO-204AL are equivalent package designations for the same through-hole axial lead diode form factor. Both refer to a cylindrical component with leads at each end. Parts specified as DO-204AL (DO-41) or DO-41 are mechanically and electrically interchangeable in PCB layouts designed for axial through-hole diodes.

Q: Why does 1N5819-E3/73 have higher forward voltage (600 mV) than the original part (500 mV)?

A: Forward voltage variation is a normal characteristic of semiconductor manufacturing and can differ between manufacturers and production batches. The 1N5819-E3/73 specification of 600 mV is within acceptable limits for Schottky diode applications. Higher forward voltage results in slightly increased power dissipation but does not affect switching speed or reverse voltage performance. Verify thermal design if this part is selected for high-current continuous operation.

Q: Is SR104 A0G suitable for low-temperature applications?

A: The SR104 A0G operating temperature range is -55°C to 125°C, which is narrower than the original SB140E-G range of -65°C to 125°C. If your application requires operation below -55°C, use SB140E-G, SB140-T, SB140-E3/73, or 1N5819 instead.

Q: Are all substitute parts RoHS3 compliant?

A: SB140E-G, 1N5819-E3/73, SB140-E3/73, SR104 A0G, and SB140-T are all RoHS3 compliant. The 1N5819 (Microchip Technology) does not specify RoHS3 status in the provided data. Verify RoHS compliance with the supplier if this is a requirement for your application.

Q: Can I use SB140-T as a direct replacement?

A: Yes. SB140-T is a parametric equivalent manufactured by Diodes Incorporated with identical electrical specifications: 40 V reverse voltage, 1 A current, 500 mV forward voltage, and 500 µA reverse leakage. It uses the same DO-41 package and operates across the same temperature range (-65°C to 125°C). This part is suitable for direct replacement with alternative manufacturer sourcing.

Q: What is the primary reason to substitute the SB140E-G?

A: Substitution is typically driven by supply chain availability, cost optimization, or manufacturer preference. All listed substitute parts maintain the same electrical performance class (40 V, 1 A Schottky diode) and package form factor. Selection should be based on inventory availability, pricing, and compliance requirements specific to your supply chain.

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