SA5230DR2G Equivalent & Substitute Parts

Part Overview

The SA5230DR2G is a general-purpose operational amplifier manufactured by onsemi, housed in an 8-SOIC surface mount package. This device features rail-to-rail output capability and is designed for linear amplification applications requiring low-power operation across a wide supply voltage range. The SA5230DR2G is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Substiute Parts

SA5230DR2G
onsemiIn Stock: 2065SA5230DR2G Datasheet
SA5230DR2G
Current Part
TS1851IDT
STMicroelectronicsIn Stock: 12888TS1851IDT Datasheet
TS1851IDT
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Key Parameters

Parameter Value Unit
Amplifier Type General Purpose
Number of Circuits 1
Output Type Rail-to-Rail
Slew Rate 0.25 V/µs
Gain Bandwidth Product 600 kHz
Current - Input Bias 40 nA
Voltage - Input Offset 400 µV
Current - Supply 1.1 mA
Current - Output / Channel 32 mA
Voltage - Supply Span (Min) 1.8 V
Voltage - Supply Span (Max) 15 V
Operating Temperature Range -40 to 85 °C
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the SA5230DR2G is determined by equivalence across the following critical parameters:

Functional Equivalence Criteria:

  • Amplifier type classification (General Purpose)
  • Number of circuits (single-channel configuration)
  • Output architecture (Rail-to-Rail capability)
  • Package form factor (8-SOIC surface mount)
  • Moisture sensitivity level (MSL 1)

Electrical Compatibility Criteria:

  • Slew rate performance (0.25 V/µs minimum)
  • Gain bandwidth product (600 kHz minimum)
  • Input bias current specification
  • Input offset voltage specification
  • Output current capability per channel
  • Supply voltage operating range overlap

The TS1851IDT from STMicroelectronics meets all functional equivalence criteria and demonstrates electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter SA5230DR2G (onsemi) TS1851IDT (STMicroelectronics) Unit
Amplifier Type General Purpose General Purpose
Number of Circuits 1 1
Output Type Rail-to-Rail Rail-to-Rail
Slew Rate 0.25 0.25 V/µs
Gain Bandwidth Product 600 630 kHz
Current - Input Bias 40 16 nA
Voltage - Input Offset 400 1000 µV
Current - Supply 1.1 0.162 mA
Current - Output / Channel 32 48 mA
Voltage - Supply Span (Min) 1.8 1.8 V
Voltage - Supply Span (Max) 15 6 V
Operating Temperature Range -40 to 85 -40 to 125 °C
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Product Status Consideration: The SA5230DR2G is classified as obsolete, whereas the TS1851IDT is active in production. For new designs and ongoing procurement, the TS1851IDT provides continuity of supply and manufacturer support.

Compliance and Certification: The TS1851IDT holds RoHS3 compliance certification, whereas the SA5230DR2G does not specify RoHS status. Both devices are REACH Unaffected and carry EAR99 ECCN classification. Both are classified under HTSUS code 8542.33.0001.

Electrical Performance: The TS1851IDT demonstrates superior performance in several parameters: lower input bias current (16 nA versus 40 nA), higher output current capability (48 mA versus 32 mA), and lower quiescent supply current (162 µA versus 1.1 mA). The TS1851IDT operates across a narrower maximum supply voltage range (6 V maximum versus 15 V maximum for the SA5230DR2G). Applications requiring supply voltages exceeding 6 V require design modification or alternative selection.

Temperature Range: The TS1851IDT supports an extended operating temperature range (-40°C to 125°C) compared to the SA5230DR2G (-40°C to 85°C), providing broader environmental applicability.

Package Compatibility: Both devices utilize identical 8-SOIC surface mount packaging with 0.154" (3.90 mm) width, enabling direct footprint compatibility on printed circuit boards.

Frequently Asked Questions (FAQ)

Q: Can the TS1851IDT directly replace the SA5230DR2G in existing designs?

A: Direct replacement is possible for applications operating at supply voltages of 6 V or lower. The TS1851IDT maximum supply voltage is 6 V, whereas the SA5230DR2G supports up to 15 V. Designs utilizing supply voltages exceeding 6 V require alternative component selection or circuit redesign.

Q: What are the key electrical differences between these devices?

A: The TS1851IDT exhibits lower input bias current (16 nA versus 40 nA), higher output current capability (48 mA versus 32 mA), and significantly lower quiescent supply current (162 µA versus 1.1 mA). The TS1851IDT has a slightly higher gain bandwidth product (630 kHz versus 600 kHz). Input offset voltage is higher in the TS1851IDT (1 mV versus 400 µV).

Q: Are the packages identical?

A: Yes. Both the SA5230DR2G and TS1851IDT are housed in 8-SOIC surface mount packages with identical dimensions (0.154" or 3.90 mm width). PCB footprints are directly compatible.

Q: What is the moisture sensitivity level for both devices?

A: Both devices are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

Q: Does the TS1851IDT meet regulatory compliance requirements?

A: The TS1851IDT is RoHS3 compliant and REACH Unaffected. Both devices carry EAR99 ECCN classification and are categorized under HTSUS code 8542.33.0001.

Q: What is the operating temperature range difference?

A: The SA5230DR2G operates from -40°C to 85°C. The TS1851IDT operates from -40°C to 125°C, providing a 40°C extended upper temperature limit.

Q: Is the TS1851IDT suitable for low-power applications?

A: Yes. The TS1851IDT demonstrates significantly lower quiescent supply current (162 µA) compared to the SA5230DR2G (1.1 mA), making it more suitable for battery-powered and low-power applications.

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