S8X8ES2 SCR 800V 800mA Thyristor Equivalent & Substitute Parts

Part Overview

The S8X8ES2 is a sensitive gate silicon controlled rectifier (SCR) manufactured by Littelfuse Inc., rated for 800V off-state voltage with 800mA on-state current capability. This through-hole TO-92 package thyristor is designed for AC switching and control applications requiring low gate trigger current. The part is currently active in production with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified based on matching electrical performance parameters and identical mechanical packaging to ensure direct circuit board compatibility.

Substiute Parts

S8X8ES2
Littelfuse Inc.In Stock: 663S8X8ES2 Datasheet
S8X8ES2
Current Part
TS110-8A2
STMicroelectronicsIn Stock: 5179TS110-8A2 Datasheet
TS110-8A2
MFR Recommended
X0202NA 1BA2
STMicroelectronicsIn Stock: 8346X0202NA 1BA2 Datasheet
X0202NA 1BA2
MFR Recommended
X0205NA 1BA2
STMicroelectronicsIn Stock: 1000393X0205NA 1BA2 Datasheet
X0205NA 1BA2
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Off State 800 V
Voltage - Gate Trigger (Vgt) Max 800 mV
Current - Gate Trigger (Igt) Max 50 µA
Voltage - On State (Vtm) Max 1.7 V
Current - On State (It RMS) Max 800 mA
Current - Hold (Ih) Max 5 mA
Operating Temperature Range -40 to 125 °C
Package / Case TO-92-3 -
SCR Type Sensitive Gate -

Substitute Part Grouping Explanation

Substitute parts for the S8X8ES2 are qualified based on the following critical parameters that determine functional equivalence:

  • Off-state voltage rating of 800V minimum
  • Sensitive gate SCR type classification
  • Through-hole TO-92-3 package configuration
  • Operating temperature range of -40°C to 125°C
  • RoHS3 compliance and REACH unaffected status
  • Gate trigger voltage (Vgt) maximum of 800mV or lower

The three identified substitute parts (TS110-8A2, X0202NA 1BA2, and X0205NA 1BA2) all meet these core substitution criteria. Differences in on-state current ratings, gate trigger current specifications, and surge current capabilities are secondary parameters that do not prevent substitution but may affect application performance margins.

Parameter Comparison

Parameter S8X8ES2 (Littelfuse) TS110-8A2 (STMicroelectronics) X0202NA 1BA2 (STMicroelectronics) X0205NA 1BA2 (STMicroelectronics)
Voltage - Off State (V) 800 800 800 800
Voltage - Gate Trigger (Vgt) Max (mV) 800 800 800 800
Current - Gate Trigger (Igt) Max (µA) 50 100 200 50
Voltage - On State (Vtm) Max (V) 1.7 1.6 1.45 1.45
Current - On State (It RMS) Max (mA) 800 1250 1250 1250
Current - Hold (Ih) Max (mA) 5 12 5 5
Current - Off State Max (µA) 3 1 5 5
Operating Temperature Range (°C) -40 to 125 -40 to 125 -40 to 125 -40 to 125
Package / Case TO-92-3 TO-92-3 TO-92-3 TO-92-3
SCR Type Sensitive Gate Sensitive Gate Sensitive Gate Sensitive Gate
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

All three substitute parts maintain active product status with full RoHS3 compliance and REACH unaffected classification, matching the regulatory and environmental requirements of the S8X8ES2. The substitutes are qualified for identical operating temperature ranges and package configurations.

X0205NA 1BA2 provides the closest electrical match to the S8X8ES2, with identical gate trigger current specification (50µA maximum) and matching hold current rating (5mA maximum). This part offers superior on-state voltage performance (1.45V versus 1.7V) and higher surge current capability (22.5A/25A versus 8A/10A).

TS110-8A2 offers increased on-state current capacity (1.25A RMS versus 800mA) with lower on-state voltage drop (1.6V), suitable for applications requiring higher current margins. Gate trigger current specification is 100µA maximum.

X0202NA 1BA2 provides the highest surge current rating (22.5A/25A) and lowest on-state voltage (1.45V) but specifies 200µA maximum gate trigger current, which may require circuit design verification for gate drive compatibility.

Frequently Asked Questions (FAQ)

Q: Can I directly replace S8X8ES2 with any of these substitute parts without circuit modification?

A: All three substitute parts share identical off-state voltage, gate trigger voltage, operating temperature range, and TO-92-3 package configuration. Direct pin-compatible substitution is supported. However, applications with tight gate drive current budgets should verify compatibility with the specified Igt maximum values, particularly for X0202NA 1BA2 (200µA).

Q: What is the primary difference between the three substitute options?

A: X0205NA 1BA2 matches the original gate trigger current specification (50µA) and provides the best electrical equivalence. TS110-8A2 offers higher on-state current capacity (1.25A RMS). X0202NA 1BA2 provides the lowest on-state voltage but requires higher gate trigger current (200µA maximum).

Q: Are all substitute parts available in the same package configuration?

A: Yes. All parts are supplied in TO-92-3 through-hole package with identical lead spacing and mounting requirements. No PCB layout modifications are necessary.

Q: Do the substitute parts meet the same compliance standards as the S8X8ES2?

A: Yes. All substitute parts are RoHS3 compliant, REACH unaffected, and classified under identical ECCN and HTSUS codes.

Q: Which substitute part should I select for maximum design margin?

A: X0205NA 1BA2 provides the best overall margin with lowest on-state voltage (1.45V), highest surge current rating (22.5A/25A), and matching gate trigger current specification (50µA) to the original part.

Request Quote (Ships tomorrow)