S8X8ES1AP Equivalent & Substitute Parts

Part Overview

The S8X8ES1AP is a Sensitive Gate SCR (Silicon Controlled Rectifier) rated for 800V off-state voltage with 800mA RMS on-state current capability. Manufactured by Littelfuse Inc., this through-hole thyristor is designed for applications requiring controlled rectification and switching in the 800V class. The device is Active status and ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when electrical and mechanical parameters align within the allowed specifications for this thyristor category, enabling direct replacement in circuit designs without functional degradation.

Key Parameters

Parameter	S8X8ES1AP
Voltage - Off State	800 V
Voltage - Gate Trigger (Vgt) (Max)	800 mV
Current - Gate Trigger (Igt) (Max)	5 µA
Voltage - On State (Vtm) (Max)	1.7 V
Current - On State (It (RMS)) (Max)	800 mA
Current - Hold (Ih) (Max)	5 mA
Operating Temperature Range	-40°C to 125°C
Mounting Type	Through Hole
Package / Case	TO-92-3 (TO-226AA)
SCR Type	Sensitive Gate

Substitute Part Grouping Explanation

Substitution eligibility for the S8X8ES1AP is determined by the following critical parameters:

Voltage Rating (Off State): Must equal 800V
SCR Type: Must be Sensitive Gate classification
Package / Case: Must be TO-92-3 (TO-226AA) through-hole configuration
Operating Temperature Range: Must span -40°C to 125°C minimum
On-State Current Capability (It (RMS)): Must support minimum 800mA RMS
Gate Trigger Voltage (Vgt): Must not exceed 800mV maximum
On-State Voltage (Vtm): Must not exceed 1.7V maximum

The identified substitute parts meet all these criteria, enabling functional equivalence in circuit applications.

Parameter Comparison

Parameter	S8X8ES1AP (Littelfuse)	TS110-8A2-AP (STMicroelectronics)	X0202NA 1BA2 (STMicroelectronics)
Voltage - Off State	800 V	800 V	800 V
Voltage - Gate Trigger (Vgt) (Max)	800 mV	800 mV	800 mV
Current - Gate Trigger (Igt) (Max)	5 µA	100 µA	200 µA
Voltage - On State (Vtm) (Max)	1.7 V	1.6 V	1.45 V
Current - On State (It (RMS)) (Max)	800 mA	1.25 A	1.25 A
Current - Hold (Ih) (Max)	5 mA	12 mA	5 mA
Current - Off State (Max)	3 µA	1 µA	5 µA
Operating Temperature Range	-40°C to 125°C	-40°C to 125°C	-40°C to 125°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3
SCR Type	Sensitive Gate	Sensitive Gate	Sensitive Gate
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Both TS110-8A2-AP and X0202NA 1BA2 are qualified substitutes for the S8X8ES1AP based on electrical and mechanical parameter alignment. Selection between alternatives depends on application-specific requirements and availability:

TS110-8A2-AP (STMicroelectronics, Cut Tape packaging) provides 1.25A RMS on-state current capability with 1.6V maximum on-state voltage. This device offers improved thermal performance margin over the original specification.

X0202NA 1BA2 (STMicroelectronics, Bulk packaging) delivers 1.25A RMS on-state current with 1.45V maximum on-state voltage, representing the lowest on-state voltage among the three options. Higher gate trigger current (200µA maximum) and hold current (5mA) match the original device specifications.

All three devices maintain identical 800V off-state voltage rating, Sensitive Gate classification, TO-92-3 package configuration, and -40°C to 125°C operating temperature range. All are ROHS3 compliant with MSL 1 rating.

Frequently Asked Questions (FAQ)

Q: Can TS110-8A2-AP directly replace S8X8ES1AP in existing designs?

A: Yes. Both devices share identical 800V off-state voltage, Sensitive Gate SCR type, TO-92-3 package, and -40°C to 125°C operating temperature range. The TS110-8A2-AP provides higher on-state current capability (1.25A vs 800mA RMS), which is compatible with applications designed for the original part.

Q: What is the difference between X0202NA 1BA2 and TS110-8A2-AP?

A: Both are 800V Sensitive Gate SCRs in TO-92-3 packages with 1.25A RMS current rating. Key differences include on-state voltage (1.45V vs 1.6V), gate trigger current (200µA vs 100µA maximum), and packaging format (Bulk vs Cut Tape). Electrical performance is equivalent for circuit substitution purposes.

Q: Are there packaging considerations when substituting these parts?

A: All three devices use identical TO-92-3 through-hole package configuration with TO-226AA formed leads. Physical footprint and PCB mounting are identical. Packaging format differences (Tape & Box, Cut Tape, Bulk) relate to supplier delivery method, not component form factor.

Q: Do all substitute parts meet the same compliance standards?

A: Yes. S8X8ES1AP, TS110-8A2-AP, and X0202NA 1BA2 are all ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. All share identical ECCN (EAR99) and HTSUS (8541.30.0080) classifications.

Q: Which substitute offers the best thermal performance?

A: X0202NA 1BA2 exhibits the lowest maximum on-state voltage at 1.45V, resulting in reduced power dissipation compared to TS110-8A2-AP (1.6V) and the original S8X8ES1AP (1.7V). This characteristic provides improved thermal margin in current-limited applications.

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