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S8550 Equivalent & Substitute Parts Reference
Part Overview
The S8550 (Manufacturer Part Number: S8550, EVVO Semi) is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 500 mA, collector-emitter voltage of 25 V, and transition frequency of 150 MHz. The device is supplied in a surface-mount SOT-23 package and conforms to RoHS3 environmental requirements with an MSL rating of 1 (unlimited).
Finding alternative models with equivalent electrical and mechanical characteristics is necessary to ensure continuous supply, design flexibility, and qualification across multiple sources in high-volume or cross-platform designs.
Substiute Parts
Key Parameters
| Parameter | Description |
|---|---|
| Transistor Type | PNP / NPN |
| Current - Collector (Ic) (Max) | Maximum collector current |
| Voltage - Collector Emitter Breakdown (Max) | Maximum allowed voltage across collector-emitter terminals |
| Vce Saturation (Max) @ Ib, Ic | Maximum collector-emitter saturation voltage at specified base and collector current |
| Current - Collector Cutoff (Max) | Maximum collector cutoff current |
| DC Current Gain (hFE) (Min) @ Ic, Vce | Minimum DC current gain at specified conditions |
| Power - Max | Maximum power dissipation |
| Frequency - Transition | Transition frequency (ft) |
| Operating Temperature | Maximum junction temperature |
| Mounting Type | Mechanical mounting method |
| Package / Case | Outline and footprint |
| Supplier Device Package | Vendor package reference |
| RoHS Status | Environmental compliance |
| Moisture Sensitivity Level (MSL) | MSL classification |
| Product Status | Lifecycle status |
Substitute Part Grouping Explanation
Substitution is based on strict equivalence of primary electrical and mechanical parameters. The following fields are matched for all substitute transistors in this reference:
- Transistor Type
- Collector Current (Ic) Max
- Collector-Emitter Breakdown Voltage (Vce Max)
- Collector-Emitter Saturation Voltage (Vce(sat)), specified at Ib and Ic
- Collector Cutoff Current Max
- DC Current Gain (hFE) Min at defined test conditions
- Maximum Power Dissipation
- Transition Frequency (ft)
- Operating Temperature Range
- Mounting Type (Surface Mount)
- Package/Case (TO-236-3, SC-59, SOT-23-3)
- RoHS Compliance
- MSL (Moisture Sensitivity Level)
- Product Status (Active)
All substitutes listed meet these parameters exactly as specified in the provided input.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Transistor Type | Ic (Max) | Vce (Max) | Vce(sat) @ Ib, Ic | Ic Cutoff (Max) | hFE (Min) @ Ic, Vce | Power - Max | ft | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | RoHS Status | MSL | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S8550 | EVVO Semi | PNP | 500 mA | 25 V | 600 mV @ 50 mA, 500 mA | 100 nA | 120 @ 50 mA, 1 V | 300 mW | 150 MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | ROHS3 | 1 | Active |
| S9012 | EVVO Semi | PNP | 500 mA | 25 V | 600 mV @ 50 mA, 500 mA | 100 nA | 120 @ 50 mA, 1 V | 300 mW | 150 MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | ROHS3 | 1 | Active |
| S9013 | EVVO Semi | NPN | 500 mA | 25 V | 600 mV @ 50 mA, 500 mA | 100 nA | 120 @ 50 mA, 1 V | 300 mW | 150 MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | ROHS3 | 1 | Active |
| MMS8550HE3-L-TP | Micro Commercial Co | PNP | 500 mA | 25 V | 600 mV @ 50 mA, 500 mA | 100 nA | 120 @ 50 mA, 1 V | 300 mW | 150 MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | ROHS3 | 1 | Active |
| S8550 | EVVO Semi | PNP | 500 mA | 25 V | 600 mV @ 50 mA, 500 mA | 100 nA | 120 @ 50 mA, 1 V | 300 mW | 150 MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | ROHS3 | 1 | Active |
Engineering Selection Recommendations
All listed equivalents and substitute BJTs match the S8550 in terms of active product status, RoHS3 compliance, and Moisture Sensitivity Level (MSL 1). All substitutes are surface-mountable, meet the same mechanical outline (SOT-23 / TO-236-3 / SC-59), and have electrical parameters identical to the original device.
Frequently Asked Questions (FAQ)
Q1: What key parameters are used for S8550 transistor substitution?
A1: Substitution is based on transistor type, collector current (Ic max), collector-emitter voltage (Vce max), saturation voltage (Vce(sat)), cutoff current, DC current gain (hFE), power dissipation, transition frequency, package, mounting method, operating temperature, product status, RoHS compliance, and MSL rating.
Q2: Are all substitute parts offered in the same package?
A2: Yes. All substitutes are supplied in surface mount SOT-23 (TO-236-3, SC-59, SOT-23-3) packages.
Q3: Can an NPN transistor (such as S9013) be used as a substitute?
A3: Transistor type is a fundamental parameter. NPN and PNP transistors differ in polarity, so substitution is only possible if the circuit design can accommodate both types.
Q4: Are all substitutes RoHS compliant?
A4: Yes. All listed substitutes are RoHS3 Compliant.
Q5: Is there any difference in electrical performance among the substitutes?
A5: Based on the parameters provided, all substitutes have identical electrical specifications.
Q6: What should be considered regarding Moisture Sensitivity Level (MSL)?
A6: All parts are rated as MSL 1 (unlimited floor life), indicating identical handling requirements.
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