S8550 Equivalent & Substitute Parts Reference

Part Overview

The S8550 (Manufacturer Part Number: S8550, EVVO Semi) is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 500 mA, collector-emitter voltage of 25 V, and transition frequency of 150 MHz. The device is supplied in a surface-mount SOT-23 package and conforms to RoHS3 environmental requirements with an MSL rating of 1 (unlimited).

Finding alternative models with equivalent electrical and mechanical characteristics is necessary to ensure continuous supply, design flexibility, and qualification across multiple sources in high-volume or cross-platform designs.

Substiute Parts

S8550
EVVO SemiIn Stock: 1169306S8550 Datasheet
S8550
Current Part
S9012
EVVO SemiIn Stock: 545489S9012 Datasheet
S9012
Parametric Equivalent
S9013
EVVO SemiIn Stock: 365311S9013 Datasheet
S9013
Parametric Equivalent
MMS8550HE3-L-TP
Micro Commercial CoIn Stock: 6953MMS8550HE3-L-TP Datasheet
MMS8550HE3-L-TP
Parametric Equivalent
S8550
EVVO SemiIn Stock: 1169306S8550 Datasheet
S8550
Parametric Equivalent

Key Parameters

ParameterDescription
Transistor TypePNP / NPN
Current - Collector (Ic) (Max)Maximum collector current
Voltage - Collector Emitter Breakdown (Max)Maximum allowed voltage across collector-emitter terminals
Vce Saturation (Max) @ Ib, IcMaximum collector-emitter saturation voltage at specified base and collector current
Current - Collector Cutoff (Max)Maximum collector cutoff current
DC Current Gain (hFE) (Min) @ Ic, VceMinimum DC current gain at specified conditions
Power - MaxMaximum power dissipation
Frequency - TransitionTransition frequency (ft)
Operating TemperatureMaximum junction temperature
Mounting TypeMechanical mounting method
Package / CaseOutline and footprint
Supplier Device PackageVendor package reference
RoHS StatusEnvironmental compliance
Moisture Sensitivity Level (MSL)MSL classification
Product StatusLifecycle status

Substitute Part Grouping Explanation

Substitution is based on strict equivalence of primary electrical and mechanical parameters. The following fields are matched for all substitute transistors in this reference:

  • Transistor Type
  • Collector Current (Ic) Max
  • Collector-Emitter Breakdown Voltage (Vce Max)
  • Collector-Emitter Saturation Voltage (Vce(sat)), specified at Ib and Ic
  • Collector Cutoff Current Max
  • DC Current Gain (hFE) Min at defined test conditions
  • Maximum Power Dissipation
  • Transition Frequency (ft)
  • Operating Temperature Range
  • Mounting Type (Surface Mount)
  • Package/Case (TO-236-3, SC-59, SOT-23-3)
  • RoHS Compliance
  • MSL (Moisture Sensitivity Level)
  • Product Status (Active)

All substitutes listed meet these parameters exactly as specified in the provided input.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Ic (Max) Vce (Max) Vce(sat) @ Ib, Ic Ic Cutoff (Max) hFE (Min) @ Ic, Vce Power - Max ft Operating Temperature Mounting Type Package / Case Supplier Device Package RoHS Status MSL Product Status
S8550 EVVO Semi PNP 500 mA 25 V 600 mV @ 50 mA, 500 mA 100 nA 120 @ 50 mA, 1 V 300 mW 150 MHz 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 ROHS3 1 Active
S9012 EVVO Semi PNP 500 mA 25 V 600 mV @ 50 mA, 500 mA 100 nA 120 @ 50 mA, 1 V 300 mW 150 MHz -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 ROHS3 1 Active
S9013 EVVO Semi NPN 500 mA 25 V 600 mV @ 50 mA, 500 mA 100 nA 120 @ 50 mA, 1 V 300 mW 150 MHz -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 ROHS3 1 Active
MMS8550HE3-L-TP Micro Commercial Co PNP 500 mA 25 V 600 mV @ 50 mA, 500 mA 100 nA 120 @ 50 mA, 1 V 300 mW 150 MHz -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 ROHS3 1 Active
S8550 EVVO Semi PNP 500 mA 25 V 600 mV @ 50 mA, 500 mA 100 nA 120 @ 50 mA, 1 V 300 mW 150 MHz 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 ROHS3 1 Active

Engineering Selection Recommendations

All listed equivalents and substitute BJTs match the S8550 in terms of active product status, RoHS3 compliance, and Moisture Sensitivity Level (MSL 1). All substitutes are surface-mountable, meet the same mechanical outline (SOT-23 / TO-236-3 / SC-59), and have electrical parameters identical to the original device.

Frequently Asked Questions (FAQ)

Q1: What key parameters are used for S8550 transistor substitution?
A1: Substitution is based on transistor type, collector current (Ic max), collector-emitter voltage (Vce max), saturation voltage (Vce(sat)), cutoff current, DC current gain (hFE), power dissipation, transition frequency, package, mounting method, operating temperature, product status, RoHS compliance, and MSL rating.

Q2: Are all substitute parts offered in the same package?
A2: Yes. All substitutes are supplied in surface mount SOT-23 (TO-236-3, SC-59, SOT-23-3) packages.

Q3: Can an NPN transistor (such as S9013) be used as a substitute?
A3: Transistor type is a fundamental parameter. NPN and PNP transistors differ in polarity, so substitution is only possible if the circuit design can accommodate both types.

Q4: Are all substitutes RoHS compliant?
A4: Yes. All listed substitutes are RoHS3 Compliant.

Q5: Is there any difference in electrical performance among the substitutes?
A5: Based on the parameters provided, all substitutes have identical electrical specifications.

Q6: What should be considered regarding Moisture Sensitivity Level (MSL)?
A6: All parts are rated as MSL 1 (unlimited floor life), indicating identical handling requirements.

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