S8050 Equivalent & Substitute Parts Reference

Part Overview

The S8050 is an EVVO Semi NPN Bipolar (BJT) Transistor, presented in the SOT-23 surface-mount package. It is actively manufactured and holds inventory status as New Original In Stock. Engineers may require alternatives to the S8050 for reasons including procurement flexibility, ensuring RoHS3 compliance, or matching inventory with certified substitutes.

Substiute Parts

S8050
EVVO SemiIn Stock: 1205138S8050 Datasheet
S8050
Current Part
S9013
EVVO SemiIn Stock: 365311S9013 Datasheet
S9013
Parametric Equivalent

Key Parameters

ParameterSpecification
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA, 1V
Power - Max300 mW
Frequency - Transition150MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.21.0095

Substitute Part Grouping Explanation

Substitutes for the S8050 are determined using identical electrical and mechanical parameters. The criteria for valid substitution include: NPN transistor type, Collector Current (Ic) rating of 500 mA, Collector-Emitter Breakdown Voltage of 25 V, Vce Saturation of 600mV at specified Ib/Ic, Collector Cutoff Current of 100nA, minimum DC Current Gain of 120, maximum power dissipation of 300 mW, transition frequency of 150MHz, an operating temperature up to 150°C (TJ), surface mount configuration, and the SOT-23 package or compatible variants. RoHS3 compliance and MSL 1 certification are also required.

Parameter Comparison

ParameterS8050S9013
ManufacturerEVVO SemiEVVO Semi
Transistor TypeNPNNPN
Current - Collector (Ic) (Max)500 mA500 mA
Voltage - Collector Emitter Breakdown (Max)25 V25 V
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA600mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA100nA
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA, 1V120 @ 50mA, 1V
Power - Max300 mW300 mW
Frequency - Transition150MHz150MHz
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23SOT-23
RoHS StatusROHS3 CompliantROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)1 (Unlimited)
ECCNEAR99EAR99
HTSUS8541.21.00958541.21.0095

Engineering Selection Recommendations

Both S8050 and S9013 are listed as active, directly interchangeable based on all provided electrical, mechanical, and compliance certificates. The packaging, RoHS3 compliance, MSL 1 rating, ECCN, and HTSUS are identical, supporting straightforward equivalency for procurement and use in compliant designs.

Frequently Asked Questions (FAQ)

Q1: What are the required criteria for substituting the S8050 with another part number?
A1: Substitutes must match transistor type, collector current rating, voltage breakdown, saturation voltage, cutoff current, current gain, maximum power dissipation, transition frequency, operating temperature, mounting type, package, RoHS3 compliance, and MSL 1.

Q2: Does package compatibility affect direct substitution between S8050 and S9013?
A2: Both devices use TO-236-3, SC-59, SOT-23-3 packages and SOT-23 supplier device package, supporting direct pin-for-pin and footprint interchangeability.

Q3: Are there compliance or certification differences between S8050 and its parametric equivalent S9013?
A3: Both models are ROHS3 compliant, with identical MSL, ECCN, and HTSUS classifications.

Q4: What operating temperature ranges are specified for these parts?
A4: S8050 operates up to 150°C (TJ). S9013 specifies a range of -55°C to 150°C (TJ).

Q5: How critical is current gain (hFE) matching for substitution?
A5: Substitution is valid due to minimum DC current gain of 120 @ 50mA, 1V for both models.

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