Request Quote
(Ships tomorrow)
S8012V Equivalent & Substitute Parts
Part Overview
The S8012V is an SCR (Silicon Controlled Rectifier) rated for 800V off-state voltage with 12A RMS current capacity, manufactured by Littelfuse Inc. in a through-hole TO-251 package. This component is discontinued at DiGi Electronics, making equivalent substitutes necessary for new designs and ongoing production requirements. The S8012V features standard recovery characteristics with a maximum gate trigger voltage of 1.5V and gate trigger current of 20mA.
Substiute Parts
Key Parameters
| Parameter | S8012V |
|---|---|
| Voltage - Off State | 800 V |
| Current - On State (It RMS) | 12 A |
| Voltage - Gate Trigger (Vgt) Max | 1.5 V |
| Current - Gate Trigger (Igt) Max | 20 mA |
| Voltage - On State (Vtm) Max | 1.6 V |
| Current - Hold (Ih) Max | 40 mA |
| Operating Temperature Range | -40°C to 125°C |
| SCR Type | Standard Recovery |
| Mounting Type | Through Hole |
| Package | TO-251-3 |
| Product Status | Discontinued |
Substitute Part Grouping Explanation
The MCR12DSN-1G qualifies as a functional equivalent based on matching the following critical electrical parameters:
- Voltage - Off State: 800V (identical)
- Current - On State (It RMS): 12A (identical)
- Current - On State (It AV): 7.6A (identical)
- Current - Off State: 10µA (within acceptable range; S8012V specifies 20µA maximum)
- Current - Non Rep. Surge: 100A @ 60Hz (meets or exceeds S8012V specification)
The MCR12DSN-1G is classified as a Sensitive Gate SCR, which operates with lower gate trigger requirements (1V maximum Vgt, 200µA maximum Igt) compared to the S8012V Standard Recovery type. This represents an improvement in gate sensitivity and is electrically compatible for applications requiring gate-triggered operation.
Key differences are limited to gate characteristics, package type (surface mount vs. through hole), and operating temperature range (110°C vs. 125°C maximum). These differences do not affect core switching functionality for equivalent voltage and current ratings.
Parameter Comparison
| Parameter | S8012V | MCR12DSN-1G | Notes |
|---|---|---|---|
| Voltage - Off State | 800 V | 800 V | Identical |
| Current - On State (It RMS) | 12 A | 12 A | Identical |
| Current - On State (It AV) | 7.6 A | 7.6 A | Identical |
| Voltage - Gate Trigger (Vgt) Max | 1.5 V | 1 V | MCR12DSN-1G has lower requirement |
| Current - Gate Trigger (Igt) Max | 20 mA | 200 µA | MCR12DSN-1G has lower requirement |
| Voltage - On State (Vtm) Max | 1.6 V | 1.9 V | MCR12DSN-1G slightly higher |
| Current - Hold (Ih) Max | 40 mA | 6 mA | MCR12DSN-1G has lower requirement |
| Current - Off State Max | 20 µA | 10 µA | MCR12DSN-1G superior leakage performance |
| Current - Non Rep. Surge (Itsm) | 100A, 120A | 100A @ 60Hz | Equivalent surge rating |
| Operating Temperature Range | -40°C to 125°C | -40°C to 110°C | S8012V has wider range |
| SCR Type | Standard Recovery | Sensitive Gate | Different gate characteristics |
| Mounting Type | Through Hole | Surface Mount | Different package technology |
| Package | TO-251-3 | TO-252-3 (DPAK) | Different form factors |
| RoHS Status | Non-compliant | ROHS3 Compliant | MCR12DSN-1G meets current standards |
| Product Status | Discontinued | Active | MCR12DSN-1G actively manufactured |
Engineering Selection Recommendations
The MCR12DSN-1G is the manufacturer-recommended substitute for the discontinued S8012V. Selection of this part requires evaluation of the following factors:
Package Compatibility: The S8012V uses through-hole TO-251 mounting, while the MCR12DSN-1G uses surface-mount TO-252 (DPAK) technology. PCB redesign is necessary if through-hole mounting is required for mechanical or assembly reasons.
Temperature Operating Range: The S8012V operates to 125°C maximum; the MCR12DSN-1G operates to 110°C maximum. Applications requiring operation above 110°C require alternative solutions.
Compliance Status: The MCR12DSN-1G is ROHS3 compliant and actively manufactured. The S8012V is RoHS non-compliant and discontinued. New designs should adopt the MCR12DSN-1G to ensure long-term supply availability and regulatory compliance.
Gate Sensitivity: The MCR12DSN-1G Sensitive Gate design requires significantly lower gate trigger voltage (1V vs. 1.5V) and current (200µA vs. 20mA). Gate drive circuits may require adjustment to accommodate these lower thresholds.
Electrical Performance: Core switching parameters (800V blocking voltage, 12A RMS current) are identical. The MCR12DSN-1G demonstrates superior leakage performance (10µA vs. 20µA off-state current) and lower holding current requirements (6mA vs. 40mA).
Frequently Asked Questions (FAQ)
Q: Can the MCR12DSN-1G directly replace the S8012V in existing through-hole designs?
A: Electrical substitution is valid; however, package conversion from through-hole TO-251 to surface-mount TO-252 (DPAK) requires PCB redesign. Direct socket replacement is not possible without mechanical adaptation.
Q: What are the implications of the MCR12DSN-1G being a Sensitive Gate SCR versus the S8012V Standard Recovery type?
A: Sensitive Gate operation requires lower gate trigger voltage (1V maximum vs. 1.5V) and current (200µA maximum vs. 20mA). Gate drive circuits must be verified to operate within these lower thresholds. The lower gate requirements typically reduce power dissipation in gate drive circuits.
Q: Is the MCR12DSN-1G suitable for applications requiring operation above 110°C?
A: No. The MCR12DSN-1G maximum operating temperature is 110°C. Applications requiring sustained operation above 110°C must identify alternative 800V, 12A SCR solutions with higher temperature ratings.
Q: What is the significance of the MCR12DSN-1G being ROHS3 compliant while the S8012V is not?
A: ROHS3 compliance indicates the MCR12DSN-1G meets current environmental and regulatory standards for electronic components. The S8012V, being non-compliant and discontinued, presents supply chain and regulatory risk for new production. New designs should adopt ROHS3-compliant alternatives.
Q: Are there differences in surge current handling between these parts?
A: Both parts specify 100A non-repetitive surge current at 60Hz. Surge handling capability is equivalent for standard application conditions.
Q: How do the on-state voltage characteristics compare?
A: The MCR12DSN-1G specifies 1.9V maximum on-state voltage (Vtm) versus 1.6V for the S8012V. This 0.3V difference results in slightly higher conduction losses in the MCR12DSN-1G. For applications with tight thermal budgets, this difference should be evaluated during design verification.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts

