S4M R7G Equivalent & Substitute Parts

Part Overview

The S4M R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 4 A average rectified current in a surface mount DO-214AB (SMC) package. This component is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production needs. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the same or compatible package footprints.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	4	A
Voltage - Forward (Vf) (Max) @ If	1.15 V @ 4 A	V
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	10	µA @ 1000 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the S4M R7G is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum DC reverse voltage (Vr) of 1000 V to ensure equivalent blocking capability.

Current Rating: The primary distinction among substitutes is the average rectified current (Io). The S4M R7G is rated for 4 A. Substitutes rated at 3 A represent current-limited alternatives suitable for applications where the full 4 A capacity is not required. The CGRC507-G substitute rated at 5 A provides current margin above the original specification.

Recovery Speed: The S4M R7G specifies fast recovery characteristics (≤ 500ns, > 200mA). Substitutes are grouped into fast recovery (≤ 500ns) and standard recovery (> 500ns) categories. Fast recovery diodes are required for high-frequency switching applications; standard recovery types are suitable for lower-frequency rectification.

Forward Voltage: Forward voltage drop (Vf) varies among substitutes from 1.15 V to 1.7 V at rated current. Lower forward voltage reduces power dissipation in high-current applications.

Package Compatibility: All listed substitutes use DO-214AB (SMC) or DO-214AA (SMB) surface mount packages. The SMB package (RS3MB-13-F) represents a different footprint and is not a direct mechanical substitute.

Temperature Range: Operating junction temperature ranges vary from -50°C to -65°C minimum and 150°C to 175°C maximum. The S4M R7G specifies -55°C to 150°C.

Compliance: All substitutes maintain ROHS3 compliance and REACH unaffected status, matching the original part's regulatory standing.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	Speed	Trr [ns]	Package	Tj (°C)	Status
S4M R7G	Taiwan Semiconductor	1000	4	1.15 @ 4A	Fast Recovery ≤ 500ns	—	DO-214AB (SMC)	-55 to 150	Discontinued
CFRC307-G	Comchip Technology	1000	3	1.3 @ 3A	Fast Recovery ≤ 500ns	500	DO-214AB (SMC)	—	Active
CGRC507-G	Comchip Technology	1000	5	1.15 @ 5A	Standard Recovery > 500ns	—	DO-214AB (SMC)	—	Active
CURC307-G	Comchip Technology	1000	3	1.7 @ 3A	Fast Recovery ≤ 500ns	75	DO-214AB (SMC)	—	Active
ER3M-TP	Micro Commercial Co	1000	3	1.7 @ 3A	Fast Recovery ≤ 500ns	75	DO-214AB (SMC)	-50 to 175	Active
RS3M-13-F	Diodes Incorporated	1000	3	1.3 @ 3A	Fast Recovery ≤ 500ns	500	DO-214AB (SMC)	-65 to 150	Active
RS3MB-13-F	Diodes Incorporated	1000	3	1.3 @ 3A	Fast Recovery ≤ 500ns	500	DO-214AA (SMB)	-65 to 150	Active
S3M	Diotec Semiconductor	1000	3	1.15 @ 3A	Standard Recovery > 500ns	1500	DO-214AB (SMC)	-50 to 150	Active
S3M-13-F	Diodes Incorporated	1000	3	1.15 @ 3A	Standard Recovery > 500ns	—	DO-214AB (SMC)	-65 to 150	Active
S3M-E3/57T	Vishay General Semiconductor	1000	3	1.15 @ 2.5A	Standard Recovery > 500ns	2500	DO-214AB (SMC)	-55 to 150	Active
S3M-E3/9AT	Vishay General Semiconductor	1000	3	1.15 @ 2.5A	Standard Recovery > 500ns	2500	DO-214AB (SMC)	-55 to 150	Active

Engineering Selection Recommendations

For Direct Current Replacement (4 A Requirement):

The CGRC507-G from Comchip Technology is the only substitute rated for 5 A average rectified current, providing margin above the original 4 A specification. This part maintains 1000 V reverse voltage rating and 1.15 V forward voltage at rated current, matching the S4M R7G electrical characteristics. The CGRC507-G is active and in production, with 978 pcs available in inventory. The trade-off is standard recovery speed (> 500ns) versus the original fast recovery specification.

For Fast Recovery Applications (≤ 500ns):

CFRC307-G and RS3M-13-F both provide fast recovery characteristics (≤ 500ns) with 500 ns reverse recovery time. Both are rated for 3 A, representing a current derating from the original 4 A. CFRC307-G is manufactured by Comchip Technology with 864 pcs in stock. RS3M-13-F is manufactured by Diodes Incorporated with 80,400 pcs in stock, offering superior availability. Both maintain 1000 V reverse voltage and ROHS3 compliance.

CURC307-G and ER3M-TP offer ultrafast recovery (75 ns) with 3 A current rating. CURC307-G has 12,100 pcs in inventory. ER3M-TP has 4,891 pcs in inventory and extends operating temperature to 175°C maximum. These parts are suitable for high-frequency switching applications where recovery speed is critical.

For Standard Recovery Applications (> 500ns):

S3M-13-F from Diodes Incorporated provides standard recovery characteristics with 3 A rating, 1.15 V forward voltage, and 80,400 pcs in inventory. S3M-E3/57T and S3M-E3/9AT from Vishay General Semiconductor offer identical electrical specifications with 34,200 and 24,300 pcs in inventory respectively. These parts are suitable for low-frequency rectification where recovery speed is not a limiting factor.

Package Consideration:

RS3MB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC). This part is not a direct mechanical substitute and requires PCB layout modification. Selection of this part is appropriate only when SMB footprint is already established in the design.

Compliance and Availability:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status. Selection should prioritize parts with active product status and adequate inventory levels for production requirements.

Frequently Asked Questions (FAQ)

Q: Can the S4M R7G be replaced with a 3 A rated diode?

A: Yes, if the application circuit does not require the full 4 A capacity. A 3 A rated substitute is acceptable for applications where peak current remains below 3 A. The CFRC307-G, RS3M-13-F, CURC307-G, ER3M-TP, S3M, S3M-13-F, S3M-E3/57T, and S3M-E3/9AT all provide 3 A ratings with 1000 V reverse voltage. Verify actual circuit current requirements before selection.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to the reverse recovery time (trr), the time required for a diode to stop conducting when reverse bias is applied. Fast recovery diodes (≤ 500ns) are required for high-frequency switching applications to minimize switching losses and electromagnetic interference. Standard recovery diodes (> 500ns) are suitable for lower-frequency rectification and power supply applications. The S4M R7G specifies fast recovery; substitutes with standard recovery may not be suitable for high-frequency circuits.

Q: Is the CGRC507-G a direct replacement for the S4M R7G?

A: The CGRC507-G matches the 1000 V reverse voltage and 1.15 V forward voltage specifications of the S4M R7G and provides 5 A current capacity, exceeding the original 4 A rating. However, the CGRC507-G specifies standard recovery speed (> 500ns) while the S4M R7G is fast recovery (≤ 500ns). The CGRC507-G is suitable for applications where recovery speed is not critical and current margin is beneficial.

Q: Can I use the RS3MB-13-F as a substitute?

A: The RS3MB-13-F is electrically equivalent to the RS3M-13-F but uses DO-214AA (SMB) package instead of DO-214AB (SMC). The SMB package has a different footprint and pin spacing. This part requires PCB layout modification and is not a direct mechanical substitute. Use RS3MB-13-F only if SMB footprint is already established in your design.

Q: Which substitute has the best availability?

A: RS3M-13-F from Diodes Incorporated has the highest inventory level at 80,400 pcs in stock. S3M-13-F from Diodes Incorporated also provides excellent availability at 15,100 pcs. Both parts maintain fast recovery characteristics and 1000 V / 3 A ratings.

Q: What is the impact of forward voltage differences among substitutes?

A: Forward voltage (Vf) determines power dissipation in the diode. Lower forward voltage reduces heat generation. The S4M R7G specifies 1.15 V @ 4 A. Substitutes range from 1.15 V to 1.7 V. In high-current applications, the 0.55 V difference between 1.15 V and 1.7 parts results in significantly higher power dissipation. Select lower Vf parts for thermal-sensitive applications.

Q: Are all substitutes ROHS3 compliant?

A: All listed substitutes maintain ROHS3 compliance and REACH unaffected status, matching the original S4M R7G regulatory standing. Compliance certifications are consistent across all recommended alternatives.

Q: What is the operating temperature range consideration?

A: The S4M R7G specifies -55°C to 150°C junction temperature. Most substitutes maintain this range or extend it. ER3M-TP extends to 175°C maximum, providing thermal margin. RS3M-13-F and S3M-13-F extend minimum temperature to -65°C. Verify application temperature requirements before selection.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message