S40J Equivalent & Substitute Parts Reference

Part Overview

The S40J is a diode (rectifier) manufactured by GeneSiC Semiconductor, categorized under Diodes, Rectifiers. It features a maximum DC reverse voltage of 600 V and an average rectified current of 40A, housed in a DO-203AB (DO-5) stud mount package. With a standard recovery speed and a maximum forward voltage of 1.1 V at 40A, this device is suitable for general-purpose rectification applications, operating over a wide temperature range. Although the product is active and in stock, sourcing equivalent or alternative models is essential to address supply continuity, compliance preferences, or multi-source design qualification.

Substiute Parts

S40J
GeneSiC SemiconductorIn Stock: 1211S40J Datasheet
S40J
Current Part
1N1190A
Microchip TechnologyIn Stock: 13221N1190A Datasheet
1N1190A
Parametric Equivalent

Key Parameters

Manufacturer Part NumberManufacturerCategoryVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedCurrent - Reverse Leakage @ VrMounting TypePackage / CaseOperating Temperature - JunctionRoHS Status
S40JGeneSiC SemiconductorDiodes, Rectifiers600 V40A1.1 V @ 40 AStandard Recovery >500ns, > 200mA (Io)10 µA @ 100 VChassis, Stud MountDO-203AB, DO-5, Stud-65°C ~ 190°CRoHS Compliant
1N1190AMicrochip TechnologyDiodes, Rectifiers600 V40A1.19 V @ 90 AStandard Recovery >500ns, > 200mA (Io)10 µA @ 600 VStud MountDO-203AB, DO-5, Stud-65°C ~ 200°CRoHS non-compliant

Substitute Part Grouping Explanation

Substitution for the S40J is determined strictly based on the following parameters: maximum DC reverse voltage (Vr), average rectified current (Io), forward voltage (Vf), recovery speed, reverse leakage current, mounting type, and package/case type. Substitutes must be in the same product category (Diodes, Rectifiers), have matching or higher ratings for voltage and current, share the same or compatible mechanical package (DO-203AB, DO-5, Stud), and demonstrate comparable operational parameters. Only parts explicitly matching these technical characteristics are considered for substitution.

Parameter Comparison

Manufacturer Part Number Manufacturer Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Current - Reverse Leakage @ Vr Mounting Type Package / Case Operating Temperature - Junction RoHS Status
S40J GeneSiC Semiconductor 600 V 40A 1.1 V @ 40 A Standard Recovery >500ns, > 200mA (Io) 10 µA @ 100 V Chassis, Stud Mount DO-203AB, DO-5, Stud -65°C ~ 190°C RoHS Compliant
1N1190A Microchip Technology 600 V 40A 1.19 V @ 90 A Standard Recovery >500ns, > 200mA (Io) 10 µA @ 600 V Stud Mount DO-203AB, DO-5, Stud -65°C ~ 200°C RoHS non-compliant

Engineering Selection Recommendations

Selection between S40J and 1N1190A is based on product status, RoHS compliance, and operating temperature range. S40J offers RoHS compliance, which may be required in restricted substance applications. 1N1190A is RoHS non-compliant but has a slightly extended upper junction temperature. Both parts are active and available in inventory.

Frequently Asked Questions (FAQ)

Q: What criteria must a substitute for S40J meet?
A: Substitutes must match the product category (Diodes, Rectifiers), maximum DC reverse voltage (600 V), average rectified current (40A), recovery speed, forward voltage rating, reverse leakage current, package/case (DO-203AB, DO-5, Stud), and mounting type.

Q: Are S40J and 1N1190A mechanically interchangeable?
A: Both are supplied in DO-203AB (DO-5) Stud Mount packages, ensuring mechanical compatibility.

Q: How does RoHS status affect compatibility?
A: RoHS status does not affect electrical or mechanical interchangeability but is relevant for compliance in restricted substance applications.

Q: Does the temperature range differ between S40J and 1N1190A?
A: S40J has a junction temperature range of -65°C to 190°C. 1N1190A operates from -65°C to 200°C.

Q: Why is reverse leakage voltage specified differently?
A: S40J reverse leakage is specified at 10 µA @ 100 V; 1N1190A at 10 µA @ 600 V. Use only data provided in the parameters for direct comparison.

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