S3DB R5G Equivalent & Substitute Parts

Part Overview

The S3DB R5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AA (SMB) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs. Equivalent parts maintain identical electrical specifications, while substitute parts offer similar functionality with minor parameter variations suitable for specific application contexts.

Substiute Parts

S3DB R5G
Taiwan Semiconductor CorporationIn Stock: 655S3DB R5G Datasheet
S3DB R5G
Current Part
S3DB
Diodes IncorporatedIn Stock: 2249S3DB Datasheet
S3DB
Parametric Equivalent
S3DBH
Taiwan Semiconductor CorporationIn Stock: 6643S3DBH Datasheet
S3DBH
Parametric Equivalent
S3DB-TP
Micro Commercial CoIn Stock: 6935S3DB-TP Datasheet
S3DB-TP
Direct
ES2D-13-F
Diodes IncorporatedIn Stock: 130979ES2D-13-F Datasheet
ES2D-13-F
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ES2DA-13-F
Diodes IncorporatedIn Stock: 56797ES2DA-13-F Datasheet
ES2DA-13-F
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ES2DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 32316ES2DHE3_A/H Datasheet
ES2DHE3_A/H
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ES2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 16060ES2DHE3_A/I Datasheet
ES2DHE3_A/I
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ES2DHE3J_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1165ES2DHE3J_A/H Datasheet
ES2DHE3J_A/H
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ESH2D-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10210ESH2D-E3/52T Datasheet
ESH2D-E3/52T
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ESH2D-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10400ESH2D-E3/5BT Datasheet
ESH2D-E3/5BT
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MURS120-13-F
Diodes IncorporatedIn Stock: 49028MURS120-13-F Datasheet
MURS120-13-F
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MURS120-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 25752MURS120-E3/52T Datasheet
MURS120-E3/52T
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MURS120-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 2126MURS120-E3/5BT Datasheet
MURS120-E3/5BT
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MURS120/2
Vishay General Semiconductor - Diodes DivisionIn Stock: 2045MURS120/2 Datasheet
MURS120/2
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MURS120HE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 209251MURS120HE3_A/H Datasheet
MURS120HE3_A/H
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MURS120HE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 978MURS120HE3_A/I Datasheet
MURS120HE3_A/I
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RS1DB-13-F
Diodes IncorporatedIn Stock: 1546RS1DB-13-F Datasheet
RS1DB-13-F
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RS2D-13-F
Diodes IncorporatedIn Stock: 53490RS2D-13-F Datasheet
RS2D-13-F
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RS2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 813RS2DHE3_A/I Datasheet
RS2DHE3_A/I
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S2D-13-F
Diodes IncorporatedIn Stock: 30188S2D-13-F Datasheet
S2D-13-F
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S2DA-13-F
Diodes IncorporatedIn Stock: 19866S2DA-13-F Datasheet
S2DA-13-F
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S2DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 792S2DHE3_A/H Datasheet
S2DHE3_A/H
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S2DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 948S2DHE3_A/I Datasheet
S2DHE3_A/I
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STTH1R02U
STMicroelectronicsIn Stock: 16815STTH1R02U Datasheet
STTH1R02U
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STTH2R02U
STMicroelectronicsIn Stock: 43030STTH2R02U Datasheet
STTH2R02U
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STTH2R02UY
STMicroelectronicsIn Stock: 60377STTH2R02UY Datasheet
STTH2R02UY
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STTH4R02U
STMicroelectronicsIn Stock: 20200STTH4R02U Datasheet
STTH4R02U
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STTH4R02UY
STMicroelectronicsIn Stock: 109776STTH4R02UY Datasheet
STTH4R02UY
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 3 A V
Reverse Recovery Time (trr) 1.5 µs
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Capacitance @ Vr, F 40 pF @ 4V, 1MHz
Package / Case DO-214AA, SMB
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the S3DB R5G is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a DC reverse voltage rating of 200 V or higher to ensure safe operation within the original circuit design envelope.

Current Rating: The average rectified current must be 3 A or greater. Parts rated at 2 A are classified as similar substitutes only, as they operate at reduced current capacity and require circuit re-evaluation.

Package Type: The DO-214AA (SMB) surface mount package is the primary form factor. Equivalent parts use identical packaging; similar parts may use alternative surface mount packages (SMA) with different footprints.

Forward Voltage: Forward voltage drop at rated current should not exceed 1.15 V @ 3 A for direct equivalents. Similar parts with lower current ratings (2 A) exhibit different forward voltage characteristics (typically 900–930 mV @ 2 A) and are not direct substitutes.

Recovery Characteristics: Standard recovery diodes (trr > 500 ns) are equivalent; fast recovery diodes (trr ≤ 500 ns) represent a different technology class and are classified as similar substitutes.

Product Status and Compliance: Active parts are preferred for new designs. Obsolete or discontinued parts require justification. Automotive-grade parts (AEC-Q101) provide additional qualification assurance.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] trr [µs/ns] Package Product Status Compliance
S3DB R5G Taiwan Semiconductor Corporation 200 3 1.15 @ 3A 1.5 µs DO-214AA (SMB) Discontinued ROHS3
S3DB Diodes Incorporated 200 3 1.15 @ 3A 2 µs DO-214AA (SMB) Obsolete ROHS3
S3DBH Taiwan Semiconductor Corporation 200 3 1.15 @ 3A 1.5 µs DO-214AA (SMB) Active ROHS3, AEC-Q101
S3DB-TP Micro Commercial Co 200 3 1.15 @ 3A Not specified DO-214AA (SMB) Not For New Designs ROHS3
ES2D-13-F Diodes Incorporated 200 2 0.92 @ 2A 25 ns DO-214AA (SMB) Active ROHS3
ES2DA-13-F Diodes Incorporated 200 2 0.92 @ 2A 25 ns DO-214AC (SMA) Active ROHS3
ES2DHE3_A/H Vishay General Semiconductor - Diodes Division 200 2 0.90 @ 2A 20 ns DO-214AA (SMB) Active ROHS3, AEC-Q101
ES2DHE3_A/I Vishay General Semiconductor - Diodes Division 200 2 0.90 @ 2A 20 ns DO-214AA (SMB) Active ROHS3, AEC-Q101
ES2DHE3J_A/H Vishay General Semiconductor - Diodes Division 200 2 0.90 @ 2A 20 ns DO-214AA (SMB) Active ROHS3, AEC-Q101
ESH2D-E3/52T Vishay General Semiconductor - Diodes Division 200 2 0.93 @ 2A 35 ns DO-214AA (SMB) Active ROHS3
ESH2D-E3/5BT Vishay General Semiconductor - Diodes Division 200 2 0.93 @ 2A 35 ns DO-214AA (SMB) Active ROHS3

Engineering Selection Recommendations

Direct Equivalent (Preferred for Replacement):

The S3DBH (Taiwan Semiconductor Corporation) is the primary equivalent for the S3DB R5G. It maintains identical electrical specifications (200 V, 3 A, 1.15 V forward voltage, 1.5 µs recovery time) and package form factor. The S3DBH is currently active in production and carries AEC-Q101 automotive qualification, providing enhanced reliability assurance. This part is suitable for direct substitution without circuit modification.

Parametric Equivalent (Alternative):

The S3DB (Diodes Incorporated) provides equivalent voltage and current ratings with identical package and forward voltage characteristics. The reverse recovery time is slightly extended (2 µs versus 1.5 µs), which remains within standard recovery classification. However, this part is obsolete and should be used only when S3DBH is unavailable. Inventory availability is limited.

Not Recommended for New Designs:

The S3DB-TP (Micro Commercial Co) is marked "Not For New Designs" and lacks complete technical specifications (reverse recovery time not provided). This part should be avoided for new circuit development.

Similar Substitutes (Current Rating Reduction):

Parts in the ES2D family (ES2D-13-F, ES2DA-13-F, ES2DHE3_A/H, ES2DHE3_A/I, ES2DHE3J_A/H, ESH2D-E3/52T, ESH2D-E3/5BT) are rated for 2 A average rectified current, representing a 33% reduction from the original 3 A specification. These parts employ fast recovery technology (trr ≤ 500 ns) and are suitable only for applications where the 2 A current rating is acceptable. Circuit re-evaluation is required before substitution.

Among the 2 A alternatives, the Vishay ES2DHE3 variants (ES2DHE3_A/H, ES2DHE3_A/I, ES2DHE3J_A/H) offer AEC-Q101 automotive qualification and are currently active in production. The ES2DA-13-F uses an SMA package (DO-214AC) instead of SMB, requiring PCB footprint modification.

Frequently Asked Questions (FAQ)

Q: Can the S3DBH directly replace the S3DB R5G without circuit modification?

A: Yes. The S3DBH maintains identical electrical specifications (200 V reverse voltage, 3 A current rating, 1.15 V forward voltage, 1.5 µs recovery time) and uses the same DO-214AA (SMB) package. Direct substitution is possible without design changes.

Q: What is the difference between the S3DB and S3DBH?

A: Both parts are rated 200 V, 3 A with identical forward voltage. The primary difference is product status: S3DBH is active and AEC-Q101 qualified, while S3DB is obsolete. The S3DBH is the recommended choice for ongoing production.

Q: Why are ES2D family parts listed as similar rather than equivalent?

A: ES2D parts are rated for 2 A average rectified current, compared to the original 3 A specification. This 33% current reduction requires circuit re-evaluation to confirm the lower rating is acceptable for the application. Additionally, ES2D parts employ fast recovery technology (trr ≤ 500 ns) versus the standard recovery (trr > 500 ns) of the S3DB R5G, representing a different diode technology class.

Q: Can I use ES2DA-13-F as a substitute?

A: ES2DA-13-F is electrically similar to other ES2D parts but uses an SMA package (DO-214AC) instead of the SMB package (DO-214AA) of the original part. PCB footprint modification is required. Additionally, the 2 A current rating necessitates circuit re-evaluation.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. Parts carrying this qualification (such as S3DBH and the Vishay ES2DHE3 variants) have undergone additional reliability testing and are suitable for automotive applications requiring enhanced quality assurance.

Q: Is the S3DB-TP a viable substitute?

A: No. The S3DB-TP is marked "Not For New Designs" and lacks complete technical specifications. This part should be avoided for new circuit development and used only in legacy system maintenance where no alternatives exist.

Q: What is the significance of the 1.5 µs versus 2 µs reverse recovery time difference between S3DBH and S3DB?

A: Both values fall within the standard recovery classification (> 500 ns). The 0.5 µs difference is minor and does not affect functional compatibility in most applications. Both parts are suitable for general-purpose rectification in power supply and signal conditioning circuits.

Q: Can I substitute a 2 A rated diode for a 3 A application?

A: Substitution requires circuit re-evaluation. The 2 A rating represents a 33% current reduction. If the actual circuit current demand does not exceed 2 A, substitution is acceptable. If peak or average currents approach or exceed 2 A, the original 3 A part is required to ensure safe operation and component longevity.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All parts listed in this reference maintain ROHS3 compliance and REACH unaffected status, meeting environmental and regulatory requirements for electronic component manufacturing and use.

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