Equivalent & Substitute Parts for S3DBF

Part Overview

The S3DBF is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 200 V DC reverse voltage and 3 A average rectified current in a Surface Mount SMB (DO-214AA) package. This component is classified as obsolete, which necessitates identification of active equivalent or substitute parts for new designs and ongoing production requirements. The S3DBF operates across a junction temperature range of -65°C to 150°C and complies with ROHS3 and REACH standards.

Substiute Parts

S3DBF
Diodes IncorporatedIn Stock: 716S3DBF Datasheet
S3DBF
Current Part
S3MB_HF
Diodes IncorporatedIn Stock: 777S3MB_HF Datasheet
S3MB_HF
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.15 @ 3 A V
Speed Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 10 µA @ 200 V µA
Capacitance @ Vr, F 40 pF @ 4V, 1MHz
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Operating Temperature - Junction -65 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the S3DBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

  • Mounting Type: Surface Mount (SMB package required)
  • Package / Case: DO-214AA, SMB (physical and electrical interface compatibility)
  • Current - Average Rectified (Io): 3 A minimum (functional current rating)
  • Voltage - DC Reverse (Vr) (Max): Equal to or greater than 200 V (voltage withstand capability)
  • Operating Temperature Range: -65°C to 150°C (thermal operating envelope)

Electrical Performance Parameters:

  • Voltage - Forward (Vf) (Max) @ If
  • Speed (Recovery characteristics)
  • Current - Reverse Leakage @ Vr
  • Capacitance @ Vr, F

The S3MB_HF meets all mandatory compatibility criteria while maintaining identical electrical performance characteristics. The substitute part features an elevated voltage rating (1000 V) compared to the original 200 V specification, which is permissible in substitution applications where the circuit design accommodates higher voltage-rated components without functional degradation.

Parameter Comparison

Parameter S3DBF (Original) S3MB_HF (Substitute) Compatibility
Manufacturer Diodes Incorporated Diodes Incorporated Same
Category Diodes, Rectifiers Diodes, Rectifiers Same
Voltage - DC Reverse (Vr) (Max) 200 V 1000 V Substitute rated higher
Current - Average Rectified (Io) 3 A 3 A Same
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 3 A 1.15 V @ 3 A Same
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Same
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 1000 V Equivalent performance
Capacitance @ Vr, F 40 pF @ 4V, 1MHz 40 pF @ 4V, 1MHz Same
Mounting Type Surface Mount Surface Mount Same
Package / Case DO-214AA, SMB DO-214AA, SMB Same
Operating Temperature - Junction -65°C to 150°C -65°C to 150°C Same
RoHS Status ROHS3 Compliant ROHS3 Compliant Same
Product Status Obsolete Active Substitute is active

Engineering Selection Recommendations

The S3MB_HF is the manufacturer-recommended substitute for the obsolete S3DBF. Both components are manufactured by Diodes Incorporated and share identical mechanical packaging (DO-214AA, SMB) and core electrical performance specifications.

Selection Basis:

  1. Product Status: The S3DBF is obsolete, while the S3MB_HF maintains active production status, ensuring long-term availability and supply chain continuity.

  2. Compliance Certifications: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for new designs and manufacturing environments.

  3. Electrical Equivalence: The S3MB_HF delivers identical forward voltage drop (1.15 V @ 3 A), recovery speed characteristics, and capacitance performance as the original part. The elevated reverse voltage rating (1000 V versus 200 V) does not introduce functional incompatibility in applications designed for the original 200 V specification.

  4. Thermal Performance: Operating temperature range remains constant at -65°C to 150°C junction temperature, maintaining thermal design compatibility.

  5. Inventory Availability: The S3MB_HF is available in active stock (698 Pcs), supporting immediate procurement for production and design transitions.

Frequently Asked Questions (FAQ)

Q: Can the S3MB_HF directly replace the S3DBF in existing circuit designs?

A: Yes. The S3MB_HF is electrically and mechanically compatible with the S3DBF. Both components feature identical current ratings (3 A), forward voltage characteristics (1.15 V @ 3 A), recovery speed, and SMB package geometry. The higher voltage rating of the S3MB_HF (1000 V versus 200 V) does not create incompatibility in applications designed for 200 V operation.

Q: What is the significance of the higher voltage rating on the S3MB_HF?

A: The S3MB_HF is rated for 1000 V DC reverse voltage, compared to the S3DBF's 200 V rating. This higher rating provides additional voltage margin in the circuit but does not alter the component's forward conduction characteristics or thermal behavior. The substitute part operates identically within the original design's voltage specifications.

Q: Are there any package or footprint differences between these parts?

A: No. Both the S3DBF and S3MB_HF use the DO-214AA SMB package with identical physical dimensions and land pattern requirements. PCB layout and assembly processes require no modification.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the S3DBF and S3MB_HF are ROHS3 compliant and REACH unaffected. They share identical ECCN (EAR99) and HTSUS (8541.10.0080) classifications.

Q: Why is the S3DBF classified as obsolete?

A: The S3DBF has been discontinued by Diodes Incorporated. The S3MB_HF represents the active product line continuation for this functional category, offering improved voltage rating and ongoing manufacturing support.

Q: What is the reverse leakage current difference between the two parts?

A: The S3DBF exhibits 10 µA reverse leakage at 200 V, while the S3MB_HF exhibits 10 µA reverse leakage at 1000 V. Both parts maintain equivalent leakage performance within their respective voltage ratings, indicating consistent semiconductor quality and reliability.

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