S3D Equivalent & Substitute Parts Reference

Part Overview

The onsemi S3D is a standard recovery rectifier diode rated for 200 V DC reverse voltage and 3 A average rectified current in a surface mount SMC (DO-214AB) package. This component is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product portfolio. Applications requiring the S3D electrical and mechanical specifications must evaluate active alternative parts that maintain compatibility with existing circuit designs and PCB layouts.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.2	V @ 3 A
Reverse Recovery Time (trr)	2.5	µs
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the S3D must satisfy the following core electrical and mechanical criteria:

Mandatory Compatibility Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Performance Considerations:

Voltage - Forward (Vf) (Max) @ If: Must not exceed 1.2 V @ 3 A for direct drop-in replacement
Operating Temperature - Junction: Must support minimum -55°C to 150°C range
Reverse Recovery Time (trr): Standard recovery (>500 ns) or fast recovery (≤500 ns) acceptable based on circuit requirements

Substitute parts are grouped into two categories: Standard Recovery devices (trr >500 ns) that maintain electrical characteristics closest to the S3D, and Fast Recovery devices (trr ≤500 ns) that offer improved switching performance at the cost of higher forward voltage in some cases.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 3A [V]	trr [ns/µs]	Tj (Min-Max) [°C]	Product Status	Package
S3D	onsemi	200	3	1.2	2500 ns	-55 to 150	Not For New Designs	DO-214AB, SMC
MURS320T3G	onsemi	200	3	0.875	35 ns	-65 to 175	Active	DO-214AB, SMC
S3D-TP	Micro Commercial Co	200	3	1.2	—	-55 to 150	Not For New Designs	DO-214AB, SMC
ER3D-TP	Micro Commercial Co	200	3	0.950	35 ns	-50 to 175	Active	DO-214AB, SMC
ES3D-13-F	Diodes Incorporated	200	3	0.900	25 ns	-55 to 150	Active	DO-214AB, SMC
ES3D-E3/57T	Vishay General Semiconductor - Diodes Division	200	3	0.900	30 ns	-55 to 150	Active	DO-214AB, SMC
ES3D-E3/9AT	Vishay General Semiconductor - Diodes Division	200	3	0.900	30 ns	-55 to 150	Active	DO-214AB, SMC
ESH3D-E3/57T	Vishay General Semiconductor - Diodes Division	200	3	0.900	40 ns	-55 to 175	Active	DO-214AB, SMC
ESH3D-E3/9AT	Vishay General Semiconductor - Diodes Division	200	3	0.900	40 ns	-55 to 175	Active	DO-214AB, SMC
RS3D-13-F	Diodes Incorporated	200	3	1.3	150 ns	-65 to 150	Active	DO-214AB, SMC
S3D-13-F	Diodes Incorporated	200	3	1.15	—	-65 to 150	Active	DO-214AB, SMC

Engineering Selection Recommendations

For Direct Replacement (Standard Recovery Technology):

The S3D-13-F (Diodes Incorporated) provides the closest electrical match to the onsemi S3D. Both devices exhibit standard recovery characteristics with forward voltage specifications within 0.05 V of each other at 3 A. The S3D-13-F is Active status and ROHS3 compliant, making it suitable for new production. Operating temperature range extends to -65°C, providing additional margin for low-temperature applications.

For Enhanced Performance (Fast Recovery Technology):

The ES3D-13-F, ES3D-E3/57T, and ES3D-E3/9AT (Diodes Incorporated and Vishay) offer fast recovery characteristics with reverse recovery times of 25–30 ns, compared to the S3D's 2.5 µs. These parts reduce switching losses and electromagnetic interference in high-frequency rectification circuits. Forward voltage is reduced to 0.900 V, lowering power dissipation. All three maintain the -55°C to 150°C junction temperature range and are Active status.

For Extended Temperature Range:

The ESH3D-E3/57T and ESH3D-E3/9AT (Vishay) extend the upper junction temperature limit to 175°C while maintaining 200 V / 3 A ratings and fast recovery performance. These parts are suitable for applications requiring thermal margin or operation in elevated ambient conditions.

For onsemi Ecosystem Continuity:

The MURS320T3G (onsemi) maintains manufacturer continuity with the lowest forward voltage (0.875 V) and fastest recovery time (35 ns) among all substitutes. Extended junction temperature range (-65°C to 175°C) and Active product status support long-term supply chain stability.

All recommended substitutes are ROHS3 compliant and maintain the DO-214AB (SMC) surface mount package, ensuring PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the S3D be replaced with any 200 V / 3 A diode in DO-214AB packaging?

A: No. Substitution requires matching the DO-214AB (SMC) package, 200 V reverse voltage rating, and 3 A average rectified current. Additionally, forward voltage at 3 A should not exceed 1.2 V for direct drop-in replacement without circuit re-analysis. Recovery speed (standard vs. fast) affects switching performance and must be evaluated against circuit requirements.

Q: What is the difference between standard recovery and fast recovery substitutes?

A: Standard recovery diodes (S3D, S3D-13-F, RS3D-13-F) exhibit reverse recovery times exceeding 500 ns, resulting in higher switching losses but lower forward voltage. Fast recovery diodes (ES3D series, ESH3D series, MURS320T3G, ER3D-TP) have reverse recovery times of 25–40 ns, reducing switching losses and EMI but with slightly higher forward voltage in some cases. Selection depends on circuit switching frequency and thermal constraints.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant, matching the S3D's environmental certification status.

Q: Can I use a substitute with a higher operating temperature range?

A: Yes. Parts with extended temperature ranges (e.g., ESH3D series rated to 175°C) are backward compatible with circuits designed for the S3D's -55°C to 150°C range. Extended range provides additional thermal margin and is not detrimental to circuit operation.

Q: What is the impact of lower forward voltage on circuit design?

A: Lower forward voltage (e.g., 0.875 V for MURS320T3G vs. 1.2 V for S3D) reduces power dissipation in the diode, lowering junction temperature and improving efficiency. This is beneficial for thermal management and does not require circuit redesign. Reverse voltage and current ratings remain unchanged.

Q: Are Cut Tape (CT) and Tape & Reel (TR) packaging options interchangeable?

A: Both packaging formats contain the same DO-214AB (SMC) component and are electrically identical. The difference is in supply format: Cut Tape is suitable for lower-volume manual assembly, while Tape & Reel is optimized for automated pick-and-place equipment. Selection depends on manufacturing process and volume requirements, not electrical performance.

Q: Which substitute offers the best balance of performance and supply availability?

A: The ES3D-E3/57T (Vishay) combines fast recovery performance (30 ns), low forward voltage (0.900 V), high inventory availability (79,415 pcs), and Active product status. The MURS320T3G (onsemi) offers the fastest recovery (35 ns) and lowest forward voltage (0.875 V) with strong availability (37,100 pcs), maintaining onsemi ecosystem continuity.

Q: Can I mix different substitute parts in the same circuit?

A: Yes, provided all selected parts meet the circuit's voltage, current, and temperature requirements. Mixing standard and fast recovery diodes in the same rectifier stage is acceptable from an electrical standpoint, though uniform recovery characteristics are preferred for balanced switching behavior in bridge rectifier configurations.

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