S3B R7G Equivalent & Substitute Parts

Part Overview

The S3B R7G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The S3B R7G operates across a junction temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards. Standard recovery characteristics with a reverse recovery time of 1.5 µs and forward voltage of 1.15 V at 3 A define its electrical performance profile.

Substiute Parts

S3B R7G
Taiwan Semiconductor CorporationIn Stock: 1251S3B R7G Datasheet
S3B R7G
Current Part
S3B
Diotec SemiconductorIn Stock: 3941S3B Datasheet
S3B
Parametric Equivalent
S3BH
Taiwan Semiconductor CorporationIn Stock: 1026S3BH Datasheet
S3BH
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CGRC502-G
Comchip TechnologyIn Stock: 887CGRC502-G Datasheet
CGRC502-G
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ES3B-13-F
Diodes IncorporatedIn Stock: 10183ES3B-13-F Datasheet
ES3B-13-F
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ES3BB-13-F
Diodes IncorporatedIn Stock: 126266ES3BB-13-F Datasheet
ES3BB-13-F
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ESH3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10475ESH3B-E3/57T Datasheet
ESH3B-E3/57T
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ESH3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1078ESH3B-E3/9AT Datasheet
ESH3B-E3/9AT
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ESH3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 884ESH3B-M3/57T Datasheet
ESH3B-M3/57T
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ESH3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1170ESH3B-M3/9AT Datasheet
ESH3B-M3/9AT
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ESH3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1135ESH3BHE3_A/H Datasheet
ESH3BHE3_A/H
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ESH3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1129ESH3BHE3_A/I Datasheet
ESH3BHE3_A/I
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RS3B-13-F
Diodes IncorporatedIn Stock: 9168RS3B-13-F Datasheet
RS3B-13-F
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RS3BB-13-F
Diodes IncorporatedIn Stock: 3201RS3BB-13-F Datasheet
RS3BB-13-F
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RS3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 831RS3BHE3_A/H Datasheet
RS3BHE3_A/H
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RS3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 819RS3BHE3_A/I Datasheet
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S3B-13-F
Diodes IncorporatedIn Stock: 30129S3B-13-F Datasheet
S3B-13-F
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S3B-TP
Micro Commercial CoIn Stock: 8884S3B-TP Datasheet
S3B-TP
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S3BB-13-F
Diodes IncorporatedIn Stock: 19031S3BB-13-F Datasheet
S3BB-13-F
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S5BC-13-F
Diodes IncorporatedIn Stock: 6745S5BC-13-F Datasheet
S5BC-13-F
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S5BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2628S5BHE3_A/H Datasheet
S5BHE3_A/H
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S5BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 812S5BHE3_A/I Datasheet
S5BHE3_A/I
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U3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12243U3B-E3/57T Datasheet
U3B-E3/57T
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U3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 824U3B-E3/9AT Datasheet
U3B-E3/9AT
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U3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 864U3B-M3/57T Datasheet
U3B-M3/57T
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U3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 823U3B-M3/9AT Datasheet
U3B-M3/9AT
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ACGRC302-HF
Comchip TechnologyIn Stock: 3467ACGRC302-HF Datasheet
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S3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 12432S3B-E3/57T Datasheet
S3B-E3/57T
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S3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1015S3B-E3/9AT Datasheet
S3B-E3/9AT
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S3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 1076S3B-M3/57T Datasheet
S3B-M3/57T
Parametric Equivalent
S3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 881S3B-M3/9AT Datasheet
S3B-M3/9AT
Parametric Equivalent
S3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1366S3BHE3_A/H Datasheet
S3BHE3_A/H
Parametric Equivalent
S3BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 968S3BHE3_A/I Datasheet
S3BHE3_A/I
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.15 @ 3 A V
Reverse Recovery Time (trr) 1.5 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Package / Case DO-214AB, SMC
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the S3B R7G is determined by the following critical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Package / Case: DO-214AB (SMC)
  • Mounting Type: Surface Mount
  • RoHS3 Compliance

Secondary Compatibility Factors:

  • Operating Temperature Range: -55°C to 150°C minimum
  • Reverse Recovery Time: Standard recovery (>500 ns) or faster
  • Forward Voltage: 1.15 V or lower at 3 A
  • Reverse Leakage Current: 5 µA or lower at 100 V

Parts are classified into two categories:

Parametric Equivalents meet all primary substitution criteria with identical or superior electrical performance within the specified operating range.

Similar Parts share the same voltage and current ratings and package type but may exhibit different recovery characteristics, forward voltage, or temperature ranges. These parts are suitable for applications where the specific electrical differences do not impact circuit performance.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [µs/ns] Ir @ Vr [µA] Package Tj Range [°C] Product Status
S3B R7G Taiwan Semiconductor Corporation 100 3 1.15 @ 3 A 1.5 µs 5 @ 100 V DO-214AB (SMC) -55 to 150 Discontinued
S3B Diotec Semiconductor 100 3 1.15 @ 3 A 1.5 µs 5 @ 100 V DO-214AB (SMC) -50 to 150 Active
S3BH Taiwan Semiconductor Corporation 100 3 1.15 @ 3 A 1.5 µs 10 @ 100 V DO-214AB (SMC) -55 to 150 Active
CGRC502-G Comchip Technology 100 5 1.15 @ 5 A 1.5 µs 10 @ 100 V DO-214AB (SMC) Active
ES3B-13-F Diodes Incorporated 100 3 0.9 @ 3 A 25 ns 10 @ 100 V DO-214AB (SMC) -55 to 150 Active
ES3BB-13-F Diodes Incorporated 100 3 0.9 @ 3 A 25 ns 10 @ 100 V DO-214AA (SMB) -55 to 150 Active
ESH3B-E3/57T Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active
ESH3B-E3/9AT Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active
ESH3B-M3/57T Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active
ESH3B-M3/9AT Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active
ESH3BHE3_A/H Vishay General Semiconductor - Diodes Division 100 3 0.9 @ 3 A 40 ns 5 @ 100 V DO-214AB (SMC) -55 to 175 Active

Engineering Selection Recommendations

Parametric Equivalent - Primary Selection:

The S3B from Diotec Semiconductor is the direct parametric equivalent to the S3B R7G. It maintains identical electrical specifications (100 V, 3 A, 1.15 V forward voltage, 1.5 µs recovery time) and package configuration (DO-214AB SMC). The part is currently active with 3,859 units in stock. The operating temperature range is -50°C to 150°C, which covers the original -55°C lower limit with a 5°C reduction. This part is suitable for direct substitution in applications where the lower temperature bound does not exceed -50°C.

Parametric Equivalent - Automotive Grade:

The S3BH from Taiwan Semiconductor Corporation is an active parametric equivalent manufactured by the original supplier. It maintains the same voltage, current, and package specifications with identical operating temperature range (-55°C to 150°C). The part carries AEC-Q101 automotive qualification and is suitable for automotive and high-reliability applications. Reverse leakage current is specified at 10 µA versus 5 µA for the original part, which remains within acceptable limits for general-purpose rectification.

Similar Parts - Enhanced Performance:

The ESH3B-E3/57T, ESH3B-E3/9AT, ESH3B-M3/57T, ESH3B-M3/9AT, and ESH3BHE3_A/H from Vishay General Semiconductor are similar parts with improved electrical characteristics. These parts feature fast recovery time (40 ns versus 1.5 µs), lower forward voltage (0.9 V versus 1.15 V), and extended operating temperature range (-55°C to 175°C). The ESH3BHE3_A/H variant includes AEC-Q101 automotive qualification. These parts are suitable for applications requiring lower power dissipation or extended temperature operation.

Similar Parts - Fast Recovery:

The ES3B-13-F and ES3BB-13-F from Diodes Incorporated offer fast recovery characteristics (25 ns) and lower forward voltage (0.9 V). The ES3B-13-F maintains the DO-214AB (SMC) package, while ES3BB-13-F uses the DO-214AA (SMB) package. Both are active with high inventory availability. These parts are suitable for switching applications where reduced recovery time improves efficiency.

Higher Current Rating:

The CGRC502-G from Comchip Technology provides a 5 A current rating in the same 100 V, DO-214AB package. This part is suitable for applications requiring higher current capacity while maintaining the same voltage and package footprint.

Frequently Asked Questions (FAQ)

Q: Can the S3B from Diotec Semiconductor directly replace the S3B R7G?

A: Yes, the Diotec S3B is a parametric equivalent with identical voltage (100 V), current (3 A), forward voltage (1.15 V @ 3 A), recovery time (1.5 µs), and package (DO-214AB SMC). The operating temperature range is -50°C to 150°C, which covers most applications. If your circuit operates below -50°C, the S3BH from Taiwan Semiconductor Corporation or Vishay ESH3B variants are required.

Q: What is the difference between standard recovery and fast recovery diodes?

A: The S3B R7G has a reverse recovery time of 1.5 µs (standard recovery). Fast recovery diodes such as ES3B-13-F (25 ns) and ESH3B variants (40 ns) switch off more quickly, reducing switching losses and electromagnetic interference. Fast recovery diodes are beneficial in high-frequency switching applications but are not required for linear rectification at low frequencies.

Q: Can I use the ES3BB-13-F (SMB package) instead of the S3B R7G (SMC package)?

A: The ES3BB-13-F uses the DO-214AA (SMB) package, which is physically larger than the DO-214AB (SMC) package. Direct substitution on the PCB is not possible without layout modification. If board space is not constrained, the ES3BB-13-F provides equivalent electrical performance with fast recovery characteristics.

Q: Is the S3BH suitable for automotive applications?

A: Yes, the S3BH carries AEC-Q101 automotive qualification and is rated for -55°C to 150°C operation. It is suitable for automotive and high-reliability applications requiring qualified components.

Q: What are the advantages of the Vishay ESH3B variants over the original S3B R7G?

A: The ESH3B variants offer three key advantages: (1) fast recovery time (40 ns versus 1.5 µs), reducing switching losses; (2) lower forward voltage (0.9 V versus 1.15 V), reducing power dissipation; (3) extended operating temperature range (-55°C to 175°C versus -55°C to 150°C). These improvements are beneficial in high-frequency and high-temperature applications.

Q: Can I use the CGRC502-G (5 A rating) in place of the S3B R7G (3 A rating)?

A: Yes, the CGRC502-G is rated for 5 A at 100 V in the same DO-214AB package. A higher-rated component can be used in applications designed for 3 A, as it provides additional current capacity margin. However, the forward voltage and recovery characteristics differ slightly, so verification of circuit performance is necessary if switching behavior is critical.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed are RoHS3 compliant. All parts also comply with REACH standards or have REACH information available upon request.

Q: What is the significance of the MSL (Moisture Sensitivity Level) rating?

A: All parts listed have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. These parts can be stored and handled without special moisture control measures, simplifying procurement and inventory management.

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