S34MS02G100BHV003 Equivalent & Substitute Parts

Part Overview

The S34MS02G100BHV003 is a 2Gbit NAND Flash memory IC manufactured by Cypress Semiconductor Corp, featuring parallel interface architecture in a 63-VFBGA package. This component is designed for non-volatile storage applications requiring high-density memory in surface-mount configurations. The part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain compatibility with existing system designs.

Substiute Parts

S34MS02G100BHV003

Cypress Semiconductor CorpIn Stock: 1127S34MS02G100BHV003 Datasheet

Current PartRFQ

MT29F2G16ABBEAH4-AAT:E TR

Micron Technology Inc.In Stock: 2605MT29F2G16ABBEAH4-AAT:E TR Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the S34MS02G100BHV003 is determined by strict alignment of the following critical parameters:

Primary Compatibility Criteria:

• Memory capacity: 2Gbit minimum
• Memory technology: FLASH - NAND
• Interface type: Parallel
• Package footprint: 63-VFBGA
• Voltage supply range: 1.7V ~ 1.95V
• Operating temperature range: -40°C ~ 105°C
• Surface mount capability
• RoHS3 compliance

The MT29F2G16ABBEAH4-AAT:E TR satisfies all primary compatibility criteria. While memory organization differs (128M x 16 versus 256M x 8), both configurations deliver equivalent 2Gbit capacity through parallel interface architecture, maintaining functional compatibility at the system level.

Parameter Comparison

Engineering Selection Recommendations

The MT29F2G16ABBEAH4-AAT:E TR is a direct functional substitute for the S34MS02G100BHV003. Both components meet identical electrical specifications for voltage supply, operating temperature range, and RoHS3 compliance. The substitute part maintains active product status with higher inventory availability (2501 units in stock versus 1017 units for the original part).

The MT29F2G16ABBEAH4-AAT:E TR carries AEC-Q100 automotive qualification, providing additional reliability assurance for applications requiring automotive-grade components. The physical package dimensions differ slightly (9x11 versus 11x9 for the 63-VFBGA), requiring PCB layout verification to confirm footprint compatibility.

Frequently Asked Questions (FAQ)

Q: Can the MT29F2G16ABBEAH4-AAT:E TR replace the S34MS02G100BHV003 in existing designs?

A: Yes, provided PCB layout accommodates the 63-VFBGA (9x11) footprint. Both parts deliver 2Gbit capacity through parallel interface with identical voltage and temperature specifications. Memory organization differs (128M x 16 versus 256M x 8), but total capacity and interface protocol remain equivalent.

Q: What is the significance of the different memory organization (128M x 16 versus 256M x 8)?

A: Memory organization describes how the 2Gbit capacity is addressed. The 128M x 16 configuration uses 16-bit data words, while 256M x 8 uses 8-bit data words. Both deliver identical total capacity and parallel interface operation. System firmware must support the substitute part's addressing scheme.

Q: Are there packaging differences between these parts?

A: Both use 63-VFBGA packages with identical pin counts. Physical dimensions differ slightly: S34MS02G100BHV003 is 11x9mm, while MT29F2G16ABBEAH4-AAT:E TR is 9x11mm. PCB layout verification is required to confirm compatibility.

Q: Does the AEC-Q100 qualification of the substitute part affect compatibility?

A: AEC-Q100 qualification indicates automotive-grade reliability testing. This does not affect electrical or functional compatibility. The substitute part meets or exceeds the original part's specifications.

Q: What is the MSL rating and why is it relevant?

A: MSL 3 (168 Hours) indicates moisture sensitivity level. Both parts require controlled storage and handling to prevent moisture absorption. Storage conditions must maintain relative humidity below specified thresholds for the 168-hour window before reflow soldering.