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S2M-F080 Equivalent & Substitute Parts
Part Overview
The S2M-F080 is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AA (SMB) package. Manufactured by onsemi, this component is classified as not for new designs, indicating obsolescence or end-of-life status. Identification of equivalent and substitute parts is necessary to support existing designs, maintenance applications, and production continuity where this diode is currently specified.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1000 | V |
| Current - Average Rectified (Io) | 2 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2 A | V |
| Reverse Recovery Time (trr) | 2 | µs |
| Current - Reverse Leakage @ Vr | 1 | µA @ 1000 V |
| Package / Case | DO-214AA, SMB | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature - Junction | -65°C ~ 150°C | °C |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the S2M-F080 is determined by equivalence in the following critical parameters:
- Voltage Rating: DC reverse voltage must equal or exceed 1000 V
- Current Rating: Average rectified current must equal or exceed 2 A
- Forward Voltage Drop: Maximum forward voltage at rated current must not exceed 1.15 V @ 2 A
- Package Type: Surface mount DO-214AA (SMB) package required for mechanical and thermal compatibility
- Reverse Recovery Time: Standard recovery characteristics (trr = 2 µs) acceptable
- Reverse Leakage Current: Maximum 1 µA @ 1000 V
- Temperature Range: Operating junction temperature range must support application requirements
- Compliance: RoHS3 compliance and REACH unaffected status required
The SB2M-M3/52T from Vishay General Semiconductor - Diodes Division meets all substitution criteria and is classified as an active product, providing design continuity and long-term availability.
Parameter Comparison
| Parameter | S2M-F080 (onsemi) | SB2M-M3/52T (Vishay) | Match Status |
|---|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 1000 V | Equivalent |
| Current - Average Rectified (Io) | 2 A | 2 A | Equivalent |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2 A | 1.15 V @ 2 A | Equivalent |
| Reverse Recovery Time (trr) | 2 µs | 2 µs | Equivalent |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V | 1 µA @ 1000 V | Equivalent |
| Package / Case | DO-214AA, SMB | DO-214AA, SMB | Equivalent |
| Mounting Type | Surface Mount | Surface Mount | Equivalent |
| Operating Temperature - Junction | -65°C ~ 150°C | -55°C ~ 150°C | Compatible |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Equivalent |
| Product Status | Not For New Designs | Active | Substitute Preferred |
Engineering Selection Recommendations
The SB2M-M3/52T is a direct functional equivalent to the S2M-F080 across all critical electrical parameters. The substitute part offers the following advantages:
- Active Product Status: The SB2M-M3/52T is classified as an active product, ensuring continued availability and manufacturing support, whereas the S2M-F080 is designated not for new designs.
- Compliance Alignment: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements.
- Thermal Performance: The SB2M-M3/52T operates across a slightly narrower junction temperature range (-55°C to 150°C versus -65°C to 150°C). This difference is acceptable for applications operating within standard industrial temperature limits.
- Electrical Equivalence: All primary electrical specifications—reverse voltage, forward current, forward voltage drop, and reverse recovery time—are identical between the two parts.
- Package Compatibility: Both components use the DO-214AA (SMB) surface mount package, ensuring mechanical and thermal compatibility with existing PCB designs.
Selection of the SB2M-M3/52T is appropriate for new production, design updates, and replacement applications where the S2M-F080 is currently specified.
Frequently Asked Questions (FAQ)
Q: Can the SB2M-M3/52T be used as a direct replacement for the S2M-F080 in existing designs?
A: Yes. The SB2M-M3/52T is electrically and mechanically equivalent to the S2M-F080. Both parts share identical voltage ratings (1000 V), current ratings (2 A), forward voltage characteristics (1.15 V @ 2 A), and package type (DO-214AA, SMB). No circuit modifications are required.
Q: What is the significance of the S2M-F080 being marked "Not For New Designs"?
A: This designation indicates that onsemi has discontinued or is phasing out the S2M-F080 for new product development. The SB2M-M3/52T, classified as an active product, is the recommended alternative for ongoing and future applications.
Q: Are there differences in the operating temperature ranges between these parts?
A: The S2M-F080 operates from -65°C to 150°C junction temperature, while the SB2M-M3/52T operates from -55°C to 150°C. For applications requiring operation below -55°C, the S2M-F080 may be necessary. For standard industrial applications, the SB2M-M3/52T is fully compatible.
Q: Do both parts meet the same compliance standards?
A: Yes. Both the S2M-F080 and SB2M-M3/52T are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic components.
Q: Is the DO-214AA package the same as SMB?
A: Yes. DO-214AA and SMB refer to the same surface mount package type. Both designations are used interchangeably in the industry. The package dimensions and PCB footprint are identical.
Q: What is the difference in reverse recovery time specifications?
A: Both parts specify a reverse recovery time (trr) of 2 µs. The S2M-F080 is classified as standard recovery with >500 ns at >2 A, while the SB2M-M3/52T is standard recovery with >500 ns at >200 mA. Both meet standard recovery classification and are functionally equivalent for this parameter.
Q: Can these parts be used interchangeably in high-frequency switching applications?
A: Both parts are classified as standard recovery diodes with identical reverse recovery times (2 µs). They are suitable for general-purpose rectification and moderate-frequency applications. For high-frequency switching applications requiring faster recovery, specialized fast-recovery or ultrafast diodes should be evaluated.
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