S2M-F080 Equivalent & Substitute Parts

Part Overview

The S2M-F080 is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AA (SMB) package. Manufactured by onsemi, this component is classified as not for new designs, indicating obsolescence or end-of-life status. Identification of equivalent and substitute parts is necessary to support existing designs, maintenance applications, and production continuity where this diode is currently specified.

Substiute Parts

S2M-F080
onsemiIn Stock: 4074S2M-F080 Datasheet
S2M-F080
Current Part
SB2M-M3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 2667SB2M-M3/52T Datasheet
SB2M-M3/52T
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 2 A V
Reverse Recovery Time (trr) 2 µs
Current - Reverse Leakage @ Vr 1 µA @ 1000 V
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -65°C ~ 150°C °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the S2M-F080 is determined by equivalence in the following critical parameters:

  • Voltage Rating: DC reverse voltage must equal or exceed 1000 V
  • Current Rating: Average rectified current must equal or exceed 2 A
  • Forward Voltage Drop: Maximum forward voltage at rated current must not exceed 1.15 V @ 2 A
  • Package Type: Surface mount DO-214AA (SMB) package required for mechanical and thermal compatibility
  • Reverse Recovery Time: Standard recovery characteristics (trr = 2 µs) acceptable
  • Reverse Leakage Current: Maximum 1 µA @ 1000 V
  • Temperature Range: Operating junction temperature range must support application requirements
  • Compliance: RoHS3 compliance and REACH unaffected status required

The SB2M-M3/52T from Vishay General Semiconductor - Diodes Division meets all substitution criteria and is classified as an active product, providing design continuity and long-term availability.

Parameter Comparison

Parameter S2M-F080 (onsemi) SB2M-M3/52T (Vishay) Match Status
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V Equivalent
Current - Average Rectified (Io) 2 A 2 A Equivalent
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 2 A 1.15 V @ 2 A Equivalent
Reverse Recovery Time (trr) 2 µs 2 µs Equivalent
Current - Reverse Leakage @ Vr 1 µA @ 1000 V 1 µA @ 1000 V Equivalent
Package / Case DO-214AA, SMB DO-214AA, SMB Equivalent
Mounting Type Surface Mount Surface Mount Equivalent
Operating Temperature - Junction -65°C ~ 150°C -55°C ~ 150°C Compatible
RoHS Status ROHS3 Compliant ROHS3 Compliant Equivalent
Product Status Not For New Designs Active Substitute Preferred

Engineering Selection Recommendations

The SB2M-M3/52T is a direct functional equivalent to the S2M-F080 across all critical electrical parameters. The substitute part offers the following advantages:

  • Active Product Status: The SB2M-M3/52T is classified as an active product, ensuring continued availability and manufacturing support, whereas the S2M-F080 is designated not for new designs.
  • Compliance Alignment: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements.
  • Thermal Performance: The SB2M-M3/52T operates across a slightly narrower junction temperature range (-55°C to 150°C versus -65°C to 150°C). This difference is acceptable for applications operating within standard industrial temperature limits.
  • Electrical Equivalence: All primary electrical specifications—reverse voltage, forward current, forward voltage drop, and reverse recovery time—are identical between the two parts.
  • Package Compatibility: Both components use the DO-214AA (SMB) surface mount package, ensuring mechanical and thermal compatibility with existing PCB designs.

Selection of the SB2M-M3/52T is appropriate for new production, design updates, and replacement applications where the S2M-F080 is currently specified.

Frequently Asked Questions (FAQ)

Q: Can the SB2M-M3/52T be used as a direct replacement for the S2M-F080 in existing designs?

A: Yes. The SB2M-M3/52T is electrically and mechanically equivalent to the S2M-F080. Both parts share identical voltage ratings (1000 V), current ratings (2 A), forward voltage characteristics (1.15 V @ 2 A), and package type (DO-214AA, SMB). No circuit modifications are required.

Q: What is the significance of the S2M-F080 being marked "Not For New Designs"?

A: This designation indicates that onsemi has discontinued or is phasing out the S2M-F080 for new product development. The SB2M-M3/52T, classified as an active product, is the recommended alternative for ongoing and future applications.

Q: Are there differences in the operating temperature ranges between these parts?

A: The S2M-F080 operates from -65°C to 150°C junction temperature, while the SB2M-M3/52T operates from -55°C to 150°C. For applications requiring operation below -55°C, the S2M-F080 may be necessary. For standard industrial applications, the SB2M-M3/52T is fully compatible.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the S2M-F080 and SB2M-M3/52T are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic components.

Q: Is the DO-214AA package the same as SMB?

A: Yes. DO-214AA and SMB refer to the same surface mount package type. Both designations are used interchangeably in the industry. The package dimensions and PCB footprint are identical.

Q: What is the difference in reverse recovery time specifications?

A: Both parts specify a reverse recovery time (trr) of 2 µs. The S2M-F080 is classified as standard recovery with >500 ns at >2 A, while the SB2M-M3/52T is standard recovery with >500 ns at >200 mA. Both meet standard recovery classification and are functionally equivalent for this parameter.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Both parts are classified as standard recovery diodes with identical reverse recovery times (2 µs). They are suitable for general-purpose rectification and moderate-frequency applications. For high-frequency switching applications requiring faster recovery, specialized fast-recovery or ultrafast diodes should be evaluated.

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