S2D R5G Equivalent & Substitute Parts

Part Overview

The S2D R5G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design and production requirements. Equivalent parts maintain identical electrical specifications, while substitute parts offer compatible performance within the same voltage and current ratings but may differ in recovery characteristics, forward voltage, or leakage current parameters.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	1.15	V @ 2 A
Reverse Recovery Time (trr)	1.5	µs
Current - Reverse Leakage @ Vr	1	µA @ 200 V
Package / Case	DO-214AA, SMB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the S2D R5G is determined by the following critical parameters:

Mandatory Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2 A
Package / Case: DO-214AA (SMB) or compatible surface mount package
Mounting Type: Surface Mount

Allowable Variation Parameters:

Voltage - Forward (Vf) (Max) @ If: Acceptable range 900 mV to 1.15 V @ 2 A
Reverse Recovery Time (trr): Acceptable range 20 ns to 1.5 µs (fast recovery ≤500 ns or standard recovery >500 ns)
Current - Reverse Leakage @ Vr: Acceptable range 1 µA to 10 µA @ 200 V
Operating Temperature - Junction: Minimum -55°C, maximum 150°C or higher
RoHS Status: ROHS3 Compliant required

Parts are grouped as Parametric Equivalents when all mandatory parameters and electrical specifications match within tight tolerances. Parts are grouped as Similar when they meet mandatory parameters but exhibit measurable differences in recovery characteristics, forward voltage, or leakage current that remain within acceptable operating ranges for general-purpose rectification applications.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [ns/µs]	Ir @ Vr [µA]	Package	Product Status
S2D R5G	Taiwan Semiconductor Corporation	200	2	1.15 @ 2A	1.5 µs	1 @ 200V	DO-214AA (SMB)	Discontinued
S2D	Diotec Semiconductor	200	2	1.15 @ 2A	1.5 µs	5 @ 200V	DO-214AA (SMB)	Active
S2DH	Taiwan Semiconductor Corporation	200	2	1.15 @ 2A	1.5 µs	1 @ 200V	DO-214AA (SMB)	Active
ES2D-13-F	Diodes Incorporated	200	2	0.92 @ 2A	25 ns	5 @ 200V	DO-214AA (SMB)	Active
ES2DA-13-F	Diodes Incorporated	200	2	0.92 @ 2A	25 ns	5 @ 200V	DO-214AC (SMA)	Active
ES2DHE3_A/H	Vishay General Semiconductor - Diodes Division	200	2	0.90 @ 2A	20 ns	10 @ 200V	DO-214AA (SMB)	Active
ES2DHE3_A/I	Vishay General Semiconductor - Diodes Division	200	2	0.90 @ 2A	20 ns	10 @ 200V	DO-214AA (SMB)	Active
ES2DHE3J_A/H	Vishay General Semiconductor - Diodes Division	200	2	0.90 @ 2A	20 ns	10 @ 200V	DO-214AA (SMB)	Active
ESH2D-E3/52T	Vishay General Semiconductor - Diodes Division	200	2	0.93 @ 2A	35 ns	2 @ 200V	DO-214AA (SMB)	Active
ESH2D-E3/5BT	Vishay General Semiconductor - Diodes Division	200	2	0.93 @ 2A	35 ns	2 @ 200V	DO-214AA (SMB)	Active
MURS120-13-F	Diodes Incorporated	200	1	0.875 @ 1A	25 ns	2 @ 200V	DO-214AA (SMB)	Active

Engineering Selection Recommendations

Parametric Equivalent Selection:

The S2DH from Taiwan Semiconductor Corporation is the direct parametric equivalent to the S2D R5G. It maintains identical electrical specifications (200 V, 2 A, 1.15 V forward voltage, 1.5 µs recovery time, 1 µA leakage) and identical package configuration. The S2DH is currently active in production and carries AEC-Q101 automotive qualification, providing enhanced reliability for applications requiring automotive-grade components. This part is the primary recommendation for direct replacement.

The S2D from Diotec Semiconductor is also a parametric equivalent with matching voltage, current, and recovery characteristics. The primary difference is reverse leakage current (5 µA versus 1 µA), which remains within acceptable limits for general-purpose rectification. This part is active and available in higher inventory quantities.

Similar Part Selection for Fast Recovery Applications:

The ES2D-13-F, ES2DHE3_A/H, ES2DHE3_A/I, and ES2DHE3J_A/H from Diodes Incorporated and Vishay offer fast recovery characteristics (20–25 ns) compared to the standard recovery (1.5 µs) of the original part. These parts are suitable for applications where reduced reverse recovery time improves switching efficiency or reduces electromagnetic interference. All maintain 200 V, 2 A ratings and DO-214AA packaging. The Vishay ES2DHE3 variants include AEC-Q101 automotive qualification.

The ESH2D-E3/52T and ESH2D-E3/5BT from Vishay offer intermediate recovery characteristics (35 ns) with extended operating temperature range (-55°C to 175°C) and lower reverse leakage (2 µA). These parts are suitable for high-temperature applications.

Package Consideration:

The ES2DA-13-F uses DO-214AC (SMA) packaging instead of DO-214AA (SMB). This part is not recommended as a direct substitute due to different footprint and board layout requirements, despite matching electrical specifications.

Current Rating Consideration:

The MURS120-13-F is rated for 1 A average rectified current, not 2 A. This part is not suitable for applications requiring 2 A continuous current and should not be selected as a substitute.

Frequently Asked Questions (FAQ)

Q: Can the S2D from Diotec Semiconductor be used as a direct replacement for the S2D R5G?

A: Yes. The Diotec S2D is a parametric equivalent with identical voltage (200 V), current (2 A), forward voltage (1.15 V @ 2 A), and recovery time (1.5 µs) specifications. The reverse leakage current is 5 µA compared to 1 µA in the original part, which remains within acceptable limits for general-purpose rectification. Both parts use DO-214AA (SMB) packaging and are RoHS3 compliant.

Q: What is the difference between the S2DH and the original S2D R5G?

A: The S2DH is electrically identical to the S2D R5G in all critical parameters. The primary difference is product status: the S2D R5G is discontinued, while the S2DH is active in production. The S2DH also carries AEC-Q101 automotive qualification, making it suitable for automotive applications. Both parts are manufactured by Taiwan Semiconductor Corporation and use identical DO-214AA packaging.

Q: Can I use a fast recovery diode like the ES2D-13-F instead of the standard recovery S2D R5G?

A: Yes, with design consideration. The ES2D-13-F maintains the same 200 V and 2 A ratings and DO-214AA packaging. The fast recovery characteristic (25 ns versus 1.5 µs) reduces reverse recovery time, which can improve switching efficiency and reduce electromagnetic interference in high-frequency applications. The forward voltage is lower (0.92 V versus 1.15 V), resulting in reduced power dissipation. These characteristics make the ES2D-13-F suitable for replacement in most applications, with potential performance improvements in switching circuits.

Q: Why is the ES2DA-13-F not recommended as a substitute?

A: The ES2DA-13-F uses DO-214AC (SMA) packaging instead of DO-214AA (SMB). Although the electrical specifications are identical to the ES2D-13-F, the different package footprint requires board layout modification and is not a direct mechanical substitute. Selection of this part requires PCB redesign.

Q: Can the MURS120-13-F replace the S2D R5G?

A: No. The MURS120-13-F is rated for 1 A average rectified current, while the S2D R5G is rated for 2 A. Using a 1 A diode in a 2 A application exceeds the component's current rating and creates reliability risk. This part is not suitable for direct substitution.

Q: What is the significance of AEC-Q101 qualification on the S2DH and Vishay ES2DHE3 variants?

A: AEC-Q101 is an automotive industry qualification standard that certifies component reliability under automotive operating conditions, including temperature cycling, vibration, and humidity exposure. Parts carrying this qualification are suitable for automotive applications where enhanced reliability is required. Non-automotive applications do not require this qualification, but automotive designs must use AEC-Q101 qualified parts.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are RoHS3 compliant, matching the compliance status of the original S2D R5G. This ensures compatibility with environmental regulations and customer requirements for lead-free components.

Q: What is the difference between standard recovery and fast recovery diodes?

A: Standard recovery diodes have reverse recovery times greater than 500 ns (the S2D R5G has 1.5 µs), while fast recovery diodes have reverse recovery times of 500 ns or less. Fast recovery diodes reduce the time required for the diode to stop conducting in reverse bias, which improves efficiency in switching applications and reduces electromagnetic interference. Standard recovery diodes are suitable for low-frequency rectification, while fast recovery diodes are preferred for high-frequency switching circuits.

Q: Can I mix different substitute parts in the same circuit board?

A: Yes, provided all selected parts meet the circuit's voltage and current requirements. However, mixing parts with significantly different forward voltage characteristics (for example, 0.90 V versus 1.15 V) may result in unequal current distribution in parallel configurations. For series or single-diode applications, forward voltage differences have minimal impact on circuit performance.

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