Equivalent & Substitute Parts for S2D-M3/5BT

Part Overview

The S2D-M3/5BT is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 200 V DC reverse voltage with 1.5 A average rectified current in a DO-214AA (SMB) package. The part is currently active and in stock with 710 units available. Equivalent and substitute parts are identified based on matching or exceeding electrical performance parameters while maintaining compatibility with DO-214AA surface mount applications. Alternative sources are necessary to address supply chain flexibility, packaging format preferences, and performance optimization for specific circuit requirements.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1.5	A
Voltage - Forward (Vf) (Max) @ If	1.15 V @ 1.5 A	V
Reverse Recovery Time (trr)	2	µs
Current - Reverse Leakage @ Vr	1	µA @ 200 V
Package / Case	DO-214AA, SMB	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the S2D-M3/5BT are classified into two categories based on electrical parameter compatibility:

Parametric Equivalents maintain identical electrical specifications across all critical parameters: 200 V reverse voltage, 1.5 A average rectified current, 1.15 V forward voltage at 1.5 A, 2 µs reverse recovery time, and 1 µA reverse leakage current at 200 V. These parts differ only in packaging format (Cut Tape versus Tape & Reel) and are sourced from the same manufacturer (Vishay General Semiconductor - Diodes Division).

Manufacturer Recommended Substitutes provide functional equivalence within the 200 V / DO-214AA SMB category but with variations in current rating, recovery speed, forward voltage, or leakage characteristics. These parts are sourced from alternative manufacturers including Micro Commercial Co, Good-Ark Semiconductor, Diodes Incorporated, and onsemi. Selection among these substitutes depends on circuit requirements for current capacity, switching speed, and thermal performance.

Key parameters determining substitution eligibility:

Voltage - DC Reverse (Vr) (Max): 200 V minimum
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Operating Temperature Range: -55°C minimum to 150°C maximum

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	trr [µs/ns]	Ir @ Vr [µA]	Packaging	Product Status
S2D-M3/5BT	Vishay	200	1.5	1.15 @ 1.5A	2 µs	1 @ 200V	Tape & Reel	Active
S2D-E3/52T	Vishay	200	1.5	1.15 @ 1.5A	2 µs	1 @ 200V	Cut Tape	Active
S2D-E3/5BT	Vishay	200	1.5	1.15 @ 1.5A	2 µs	1 @ 200V	Tape & Reel	Active
ER1D-LTP	Micro Commercial Co	200	1.0	0.95 @ 1A	35 ns	5 @ 200V	Tape & Reel	Active
ES2D	Good-Ark Semiconductor	200	2.0	0.95 @ 2A	35 ns	10 @ 200V	Cut Tape & Digi-Reel	Active
ES2D-13-F	Diodes Incorporated	200	2.0	0.92 @ 2A	25 ns	5 @ 200V	Cut Tape & Digi-Reel	Active
ES3DB-13-F	Diodes Incorporated	200	3.0	0.90 @ 3A	25 ns	10 @ 200V	Cut Tape & Digi-Reel	Active
MURS120-13-F	Diodes Incorporated	200	1.0	0.875 @ 1A	25 ns	2 @ 200V	Cut Tape & Digi-Reel	Active
MURS220T3G	onsemi	200	2.0	0.95 @ 2A	35 ns	2 @ 200V	Cut Tape & Digi-Reel	Active
RS1DB-13	Diodes Incorporated	200	1.0	1.3 @ 1A	150 ns	5 @ 200V	—	Discontinued at DiGi Electronics
RS1DB-13-F	Diodes Incorporated	200	1.0	1.3 @ 1A	150 ns	5 @ 200V	Tape & Reel	Active

Engineering Selection Recommendations

Direct Parametric Equivalents (Preferred for Direct Substitution)

S2D-E3/52T and S2D-E3/5BT are direct parametric equivalents to S2D-M3/5BT, manufactured by Vishay General Semiconductor - Diodes Division. These parts maintain identical electrical specifications and differ only in packaging format. S2D-E3/52T is supplied in Cut Tape format with 15,100 units in stock. S2D-E3/5BT is supplied in Tape & Reel format with 6,490 units in stock. Both parts carry ROHS3 compliance and are classified as Active products.

Higher Current Capacity Substitutes

ES2D-13-F (Diodes Incorporated) and ES3DB-13-F (Diodes Incorporated) provide increased current capacity at 2 A and 3 A respectively, while maintaining 200 V reverse voltage and DO-214AA package compatibility. Both employ fast recovery technology with 25 ns reverse recovery time. ES2D-13-F offers 130,906 units in stock; ES3DB-13-F offers 32,100 units. Both are ROHS3 compliant and Active products.

Lower Current Capacity Substitutes

MURS120-13-F (Diodes Incorporated) and RS1DB-13-F (Diodes Incorporated) provide 1 A current capacity with 200 V reverse voltage. MURS120-13-F features 25 ns reverse recovery time and 49,015 units in stock. RS1DB-13-F features 150 ns reverse recovery time and 1,480 units in stock. Both are ROHS3 compliant and Active products.

Alternative Manufacturer Options

ER1D-LTP (Micro Commercial Co) provides 1 A capacity with 35 ns recovery time and extended operating temperature range (-65°C to 175°C). MURS220T3G (onsemi) provides 2 A capacity with 35 ns recovery time and extended operating temperature range (-65°C to 175°C). Both maintain 200 V reverse voltage and DO-214AA compatibility with ROHS3 compliance and Active status.

Discontinued Part

RS1DB-13 (Diodes Incorporated) is discontinued at DiGi Electronics and should not be selected for new designs. RS1DB-13-F is the active equivalent.

Frequently Asked Questions (FAQ)

Q: Can S2D-E3/52T replace S2D-M3/5BT directly?

A: Yes. S2D-E3/52T is a parametric equivalent with identical electrical specifications. The only difference is packaging format: S2D-E3/52T is supplied in Cut Tape while S2D-M3/5BT is supplied in Tape & Reel. Both maintain 200 V reverse voltage, 1.5 A current, 1.15 V forward voltage, and 2 µs recovery time.

Q: What is the difference between standard recovery and fast recovery diodes in this category?

A: The S2D-M3/5BT employs standard recovery technology with 2 µs reverse recovery time. Fast recovery substitutes such as ES2D-13-F, MURS120-13-F, and MURS220T3G feature recovery times of 25 ns to 35 ns. Fast recovery reduces switching losses and improves efficiency in high-frequency applications but may increase reverse leakage current.

Q: Can I use ES3DB-13-F (3 A) in place of S2D-M3/5BT (1.5 A)?

A: Yes. ES3DB-13-F provides higher current capacity while maintaining 200 V reverse voltage and DO-214AA package compatibility. The circuit will operate within safe margins. However, the higher current rating is unnecessary if the circuit requires only 1.5 A, and the part may introduce unnecessary cost.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended active substitutes carry ROHS3 compliance. RS1DB-13 is RoHS non-compliant and discontinued; do not use for new designs. RS1DB-13-F is the compliant active equivalent.

Q: What is the operating temperature range difference between S2D-M3/5BT and ER1D-LTP?

A: S2D-M3/5BT operates from -55°C to 150°C. ER1D-LTP operates from -65°C to 175°C, providing extended low-temperature and high-temperature capability. Select ER1D-LTP if the application requires operation beyond the standard range.

Q: Can I substitute a 1 A diode for a 1.5 A requirement?

A: No. MURS120-13-F and RS1DB-13-F are rated for 1 A maximum. Using a 1 A diode in a 1.5 A circuit exceeds the component rating and creates reliability risk. Select parts rated for 1.5 A or higher.

Q: What packaging formats are available for S2D-M3/5BT equivalents?

A: Parametric equivalents are available in Tape & Reel (S2D-E3/5BT) and Cut Tape (S2D-E3/52T) formats. Tape & Reel is standard for automated assembly; Cut Tape is used for manual or lower-volume applications. Both formats maintain identical electrical performance.

Q: How does forward voltage affect circuit performance?

A: Forward voltage determines voltage drop across the diode during conduction. S2D-M3/5BT exhibits 1.15 V at 1.5 A. Fast recovery substitutes such as MURS120-13-F exhibit lower forward voltage (0.875 V at 1 A), reducing power dissipation. Higher forward voltage substitutes such as RS1DB-13-F (1.3 V at 1 A) increase power dissipation. Select based on thermal budget and efficiency requirements.

Q: Is reverse leakage current important for my application?

A: Reverse leakage current becomes significant in high-impedance circuits, precision analog applications, and high-temperature environments. S2D-M3/5BT exhibits 1 µA at 200 V. Fast recovery alternatives exhibit 2 µA to 10 µA. Standard recovery alternatives exhibit 5 µA. Select based on circuit sensitivity to leakage.

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