S2DA R3G Equivalent & Substitute Parts

Part Overview

The S2DA R3G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1.5 A average rectified current in a surface mount DO-214AC (SMA) package. This component is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and production needs. The part operates across a junction temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards.

Substiute Parts

S2DA R3G
Taiwan Semiconductor CorporationIn Stock: 836S2DA R3G Datasheet
S2DA R3G
Current Part
S2DA
Diodes IncorporatedIn Stock: 4062S2DA Datasheet
S2DA
Parametric Equivalent
CGRA4003-G
Comchip TechnologyIn Stock: 989CGRA4003-G Datasheet
CGRA4003-G
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ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
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ES1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1051ES1D-M3/5AT Datasheet
ES1D-M3/5AT
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ES1D-M3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 3252ES1D-M3/61T Datasheet
ES1D-M3/61T
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ES1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 24818ES1DHE3_A/H Datasheet
ES1DHE3_A/H
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ES1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 20305ES1DHE3_A/I Datasheet
ES1DHE3_A/I
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ES2D-LTP
Micro Commercial CoIn Stock: 75339ES2D-LTP Datasheet
ES2D-LTP
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ESH1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10257ESH1D-E3/61T Datasheet
ESH1D-E3/61T
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RS1D-13-F
Diodes IncorporatedIn Stock: 53982RS1D-13-F Datasheet
RS1D-13-F
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RS1DB-13-F
Diodes IncorporatedIn Stock: 1546RS1DB-13-F Datasheet
RS1DB-13-F
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RS1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 7752RS1DHE3_A/H Datasheet
RS1DHE3_A/H
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RS1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 7271RS1DHE3_A/I Datasheet
RS1DHE3_A/I
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S1D-13-F
Diodes IncorporatedIn Stock: 300326S1D-13-F Datasheet
S1D-13-F
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S1DB-13-F
Diodes IncorporatedIn Stock: 20164S1DB-13-F Datasheet
S1DB-13-F
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S1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2957S1DHE3_A/H Datasheet
S1DHE3_A/H
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S1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 6250S1DHE3_A/I Datasheet
S1DHE3_A/I
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STTH102A
STMicroelectronicsIn Stock: 10338STTH102A Datasheet
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STTH102AY
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STTH1R02A
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STTH2R02A
STMicroelectronicsIn Stock: 116772STTH2R02A Datasheet
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UH1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1128UH1DHE3_A/H Datasheet
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UH1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 1195UH1DHE3_A/I Datasheet
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US1D-13-F
Diodes IncorporatedIn Stock: 155307US1D-13-F Datasheet
US1D-13-F
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US1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 961US1D-M3/5AT Datasheet
US1D-M3/5AT
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US1D-TP
Micro Commercial CoIn Stock: 3497US1D-TP Datasheet
US1D-TP
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US1GHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 59196US1GHE3_A/H Datasheet
US1GHE3_A/H
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US2DA-TP
Micro Commercial CoIn Stock: 1158US2DA-TP Datasheet
US2DA-TP
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VS-1EMH02-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 15817VS-1EMH02-M3/5AT Datasheet
VS-1EMH02-M3/5AT
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VS-2EMH02-M3/5AT
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1.5 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1.5 A V
Reverse Recovery Time (trr) 1.5 µs
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Capacitance @ Vr, F 30 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Technology Standard
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the S2DA R3G is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a DC reverse voltage rating of 200 V or higher to ensure safe operation in the original circuit.

Current Rating: The average rectified current capacity must be sufficient for the application. The S2DA R3G is rated at 1.5 A. Substitute parts rated at 1.5 A provide direct equivalence. Parts rated at 1 A or 2 A represent current-limited or current-enhanced alternatives, respectively, and require circuit analysis to confirm suitability.

Package and Mounting: All substitute parts use the DO-214AC (SMA) surface mount package, ensuring mechanical and electrical compatibility with existing PCB layouts.

Recovery Characteristics: The S2DA R3G exhibits standard recovery behavior (>500 ns). Substitute parts with fast recovery characteristics (≤500 ns) offer improved switching performance but remain functionally compatible.

Temperature Range: The S2DA R3G operates from -55°C to 150°C. Substitute parts with equal or extended temperature ranges maintain thermal compatibility.

Compliance: All substitute parts comply with RoHS3 and REACH standards, matching the environmental and regulatory requirements of the original component.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] trr [µs/ns] Ir @ Vr [µA] Package Product Status
S2DA R3G Taiwan Semiconductor Corporation 200 1.5 1.1 @ 1.5 A 1.5 µs 5 @ 200 V DO-214AC (SMA) Discontinued
S2DA Diodes Incorporated 200 1.5 1.15 @ 1.5 A 1.5 µs 5 @ 200 V DO-214AC (SMA) Obsolete
CGRA4003-G Comchip Technology 200 1.0 1.1 @ 1 A ≤500 ns 5 @ 200 V DO-214AC (SMA) Active
ES1D-13-F Diodes Incorporated 200 1.0 0.92 @ 1 A 25 ns 5 @ 200 V DO-214AC (SMA) Active
ES1D-M3/5AT Vishay General Semiconductor - Diodes Division 200 1.0 0.92 @ 1 A 25 ns 5 @ 200 V DO-214AC (SMA) Active
ES1D-M3/61T Vishay General Semiconductor - Diodes Division 200 1.0 0.92 @ 1 A 25 ns 5 @ 200 V DO-214AC (SMA) Active
ES1DHE3_A/H Vishay General Semiconductor - Diodes Division 200 1.0 0.92 @ 1 A 25 ns 5 @ 200 V DO-214AC (SMA) Active
ES1DHE3_A/I Vishay General Semiconductor - Diodes Division 200 1.0 0.92 @ 1 A 25 ns 5 @ 200 V DO-214AC (SMA) Active
ES2D-LTP Micro Commercial Co 200 2.0 0.95 @ 2 A 35 ns 5 @ 200 V DO-214AC (SMA) Active
ESH1D-E3/61T Vishay General Semiconductor - Diodes Division 200 1.0 0.90 @ 1 A 25 ns 1 @ 200 V DO-214AC (SMA) Active
RS1D-13-F Diodes Incorporated 200 1.0 1.3 @ 1 A 150 ns 5 @ 200 V DO-214AC (SMA) Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The S2DA from Diodes Incorporated provides the closest electrical match to the S2DA R3G, with identical voltage and current ratings (200 V, 1.5 A) and matching recovery characteristics (1.5 µs). Forward voltage differs marginally (1.15 V vs. 1.1 V at 1.5 A). However, this part is listed as obsolete, limiting its availability for new production.

Active Substitute with Current Derating:

Parts rated at 1.0 A (CGRA4003-G, ES1D-13-F, ES1D-M3/5AT, ES1D-M3/61T, ES1DHE3_A/H, ES1DHE3_A/I, ESH1D-E3/61T, and RS1D-13-F) are suitable for applications where the circuit current demand does not exceed 1.0 A. These parts maintain the 200 V voltage rating and DO-214AC package compatibility. All are currently active in production.

Active Substitute with Current Enhancement:

The ES2D-LTP from Micro Commercial Co is rated at 2.0 A, providing current capacity exceeding the original 1.5 A specification. This part is suitable for applications requiring higher current handling or for designs with future current margin requirements. It maintains the 200 V voltage rating and DO-214AC package.

Automotive-Qualified Alternatives:

The ES1DHE3_A/H and ES1DHE3_A/I variants from Vishay General Semiconductor carry AEC-Q101 automotive qualification. These parts are suitable for automotive and high-reliability applications requiring formal qualification documentation.

Selection Criteria Based on Product Status:

All recommended active substitutes are currently in production and available from inventory. The obsolete S2DA from Diodes Incorporated should be avoided for new designs unless existing stock is confirmed available. The discontinued S2DA R3G from Taiwan Semiconductor Corporation requires replacement for ongoing production.

Frequently Asked Questions (FAQ)

Q: Can the ES1D-13-F replace the S2DA R3G in all applications?

A: The ES1D-13-F maintains the 200 V voltage rating and DO-214AC package compatibility. However, it is rated at 1.0 A versus the original 1.5 A. Substitution is valid only if the circuit current demand does not exceed 1.0 A. Forward voltage is lower (0.92 V vs. 1.1 V), and recovery time is faster (25 ns vs. 1.5 µs), both favorable characteristics. Circuit analysis is required to confirm current compatibility.

Q: What is the difference between fast recovery and standard recovery diodes?

A: The S2DA R3G exhibits standard recovery behavior with a reverse recovery time of 1.5 µs. Fast recovery diodes, such as the ES1D-13-F (25 ns), switch off more rapidly when transitioning from forward to reverse bias. Fast recovery characteristics reduce switching losses and electromagnetic interference in high-frequency applications. Both types are electrically compatible at the same voltage and current ratings.

Q: Are all substitute parts RoHS3 and REACH compliant?

A: Yes. All substitute parts listed in this reference comply with RoHS3 and REACH standards, matching the environmental and regulatory requirements of the original S2DA R3G component.

Q: Can the ES2D-LTP be used as a direct replacement?

A: The ES2D-LTP is rated at 2.0 A, exceeding the original 1.5 A specification. It maintains the 200 V voltage rating and DO-214AC package. The higher current rating provides design margin and is electrically compatible. However, the part is not a direct replacement; it is an upgrade suitable for applications requiring higher current capacity or future design flexibility.

Q: What is the significance of the DO-214AC (SMA) package designation?

A: DO-214AC and SMA refer to the same surface mount package. All substitute parts use this identical package, ensuring mechanical and electrical compatibility with existing PCB layouts. No board redesign is required when substituting between parts with this package designation.

Q: Which substitute part offers the lowest forward voltage drop?

A: The ESH1D-E3/61T exhibits the lowest forward voltage at 0.90 V @ 1 A, compared to 1.1 V @ 1.5 A for the original S2DA R3G. However, this part is rated at 1.0 A. Lower forward voltage reduces power dissipation and heat generation in the diode, which is beneficial for thermal management in power-sensitive applications.

Q: Are automotive-qualified versions available?

A: Yes. The ES1DHE3_A/H and ES1DHE3_A/I from Vishay General Semiconductor carry AEC-Q101 automotive qualification. These parts are suitable for automotive applications and high-reliability systems requiring formal qualification documentation.

Q: What is the operating temperature range of the substitute parts?

A: Most substitute parts operate from -55°C to 150°C, matching the original S2DA R3G. The ES2D-LTP extends the upper limit to 175°C, and the ESH1D-E3/61T also extends to 175°C. Extended temperature ranges provide additional thermal margin for applications in high-temperature environments.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: Substitution depends on circuit requirements. Parts with identical voltage and current ratings (S2DA from Diodes Incorporated) are directly interchangeable. Parts with lower current ratings (1.0 A) require circuit analysis to confirm current compatibility. Parts with higher current ratings (2.0 A) are compatible but represent design upgrades. Mixing different part numbers in the same production run is not recommended without formal design review and qualification.

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