S2D Equivalent & Substitute Parts Reference

Part Overview

The S2D is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AA (SMB) package. The device features standard recovery characteristics with a reverse recovery time of 2 µs and operates across a junction temperature range of -55°C to 150°C.

The S2D is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating variations in recovery speed and forward voltage characteristics.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	1.15 V @ 2 A	V
Reverse Recovery Time (trr)	2	µs
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Speed Classification	Standard Recovery >500ns, > 200mA (Io)	-
Mounting Type	Surface Mount	-
Package / Case	DO-214AA, SMB	-
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	RoHS non-compliant	-

Substitute Part Grouping Explanation

Substitution of the S2D is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V minimum
Current - Average Rectified (Io): 2 A minimum
Package / Case: DO-214AA (SMB) surface mount
Operating Temperature - Junction: Must accommodate -55°C to 150°C range

Allowable Variations:

Voltage - Forward (Vf): Substitute devices may operate at lower forward voltages (900 mV to 1.15 V @ rated current), resulting in reduced power dissipation
Reverse Recovery Time (trr): Substitute devices may feature faster recovery (25 ns to 35 ns) compared to the standard recovery specification (2 µs), improving switching performance
Current - Reverse Leakage @ Vr: Substitute devices may exhibit lower leakage currents (2 µA to 10 µA @ 200 V)
RoHS Compliance: Substitute devices may be RoHS3 compliant, addressing environmental and regulatory requirements

Partial Substitutes (Current Rating Reduction):

S2D/54 (Vishay): 1.5 A rated current (75% of original specification)
CMR1S-02 TR13 PBFREE (Central Semiconductor): 1 A rated current (50% of original specification)
S2D-13-F (Diodes Incorporated): 1.5 A rated current (75% of original specification)

These partial substitutes are applicable only in applications where the actual circuit current demand does not exceed the substitute device rating.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [ns/µs]	Ir @ Vr [µA]	Speed	Tj Range [°C]	RoHS Status	Product Status
S2D	Micro Commercial Co	200	2	1.15 @ 2 A	2 µs	10 @ 200 V	Standard Recovery >500ns	-55 to 150	Non-compliant	Obsolete
S2D/54	Vishay General Semiconductor	200	1.5	1.15 @ 1.5 A	2 µs	1 @ 200 V	Standard Recovery >500ns	-55 to 150	Non-compliant	Active
CMR1S-02 TR13 PBFREE	Central Semiconductor Corp	200	1	0.95 @ 1 A	35 ns	5 @ 200 V	Fast Recovery ≤500ns	-65 to 150	ROHS3 Compliant	Active
ES2D	Good-Ark Semiconductor	200	2	0.95 @ 2 A	35 ns	10 @ 200 V	Fast Recovery ≤500ns	-55 to 150	ROHS3 Compliant	Active
ES2D-13-F	Diodes Incorporated	200	2	0.92 @ 2 A	25 ns	5 @ 200 V	Fast Recovery ≤500ns	-55 to 150	ROHS3 Compliant	Active
ES2D-E3/52T	Vishay General Semiconductor	200	2	0.90 @ 2 A	30 ns	10 @ 200 V	Fast Recovery ≤500ns	-55 to 150	ROHS3 Compliant	Active
ES2D-E3/5BT	Vishay General Semiconductor	200	2	0.90 @ 2 A	30 ns	10 @ 200 V	Fast Recovery ≤500ns	-55 to 150	ROHS3 Compliant	Active
ESH2D-E3/5BT	Vishay General Semiconductor	200	2	0.93 @ 2 A	35 ns	2 @ 200 V	Fast Recovery ≤500ns	-55 to 175	ROHS3 Compliant	Active
S2D	Diotec Semiconductor	200	2	1.15 @ 2 A	1.5 µs	5 @ 200 V	Standard Recovery >500ns	-50 to 150	ROHS3 Compliant	Active
S2D-13-F	Diodes Incorporated	200	1.5	1.15 @ 1.5 A	Not specified	5 @ 200 V	Standard Recovery >500ns	-65 to 150	ROHS3 Compliant	Active

Engineering Selection Recommendations

Full-Rated Substitutes (2 A, 200 V):

The following devices provide complete electrical equivalence to the S2D with identical voltage and current ratings:

ES2D (Good-Ark Semiconductor): Active product status with ROHS3 compliance. Features fast recovery characteristics (35 ns) and reduced forward voltage (950 mV @ 2 A). Highest inventory availability (89,400 units).
ES2D-13-F (Diodes Incorporated): Active product status with ROHS3 compliance. Offers the fastest recovery time (25 ns) and lowest forward voltage (920 mV @ 2 A) among full-rated substitutes. Extensive inventory (130,906 units).
ES2D-E3/52T (Vishay General Semiconductor): Active product status with ROHS3 compliance. Provides balanced performance with 30 ns recovery time and 900 mV forward voltage. Large inventory (155,985 units).
ES2D-E3/5BT (Vishay General Semiconductor): Active product status with ROHS3 compliance. Identical electrical characteristics to ES2D-E3/52T with Tape & Reel packaging. Inventory: 22,500 units.
ESH2D-E3/5BT (Vishay General Semiconductor): Active product status with ROHS3 compliance. Extended operating temperature range (-55°C to 175°C) and lowest reverse leakage (2 µA @ 200 V). Suitable for high-temperature applications.
S2D (Diotec Semiconductor): Active product status with ROHS3 compliance. Maintains standard recovery characteristics (1.5 µs) and forward voltage profile (1.15 V @ 2 A) matching the original specification. Inventory: 3,049 units.

Reduced-Current Substitutes (1.5 A or 1 A, 200 V):

These devices are applicable only in circuits where the actual operating current does not exceed the substitute device rating:

S2D/54 (Vishay General Semiconductor): 1.5 A rated current. Active product status with standard recovery characteristics. Suitable for applications requiring 75% of original current capacity.
S2D-13-F (Diodes Incorporated): 1.5 A rated current. Active product status with ROHS3 compliance and extended temperature range (-65°C to 150°C).
CMR1S-02 TR13 PBFREE (Central Semiconductor Corp): 1 A rated current. Active product status with ROHS3 compliance, fast recovery (35 ns), and extended temperature range (-65°C to 150°C). Suitable for applications requiring 50% of original current capacity.

Compliance Considerations:

The original S2D is RoHS non-compliant. All active substitute devices listed are ROHS3 compliant, addressing regulatory requirements for new designs and production environments subject to RoHS directives.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute device with lower current rating (1.5 A or 1 A) in place of the 2 A S2D?

A: Reduced-current substitutes are applicable only if the actual circuit current demand does not exceed the substitute device rating. The circuit must be analyzed to confirm that peak and average rectified currents remain below the substitute device specification. Using an undersized device in an application requiring 2 A operation will result in device failure or degraded performance.

Q: What is the difference between standard recovery and fast recovery diodes?

A: The S2D features standard recovery with a reverse recovery time (trr) of 2 µs. Substitute devices with fast recovery characteristics (trr = 25 ns to 35 ns) switch more rapidly when transitioning from forward to reverse bias. Fast recovery substitutes reduce switching losses and electromagnetic interference in high-frequency applications. Standard recovery devices are suitable for lower-frequency rectification circuits.

Q: Are all substitute devices compatible with the DO-214AA (SMB) package footprint?

A: Yes. All listed substitute devices use the DO-214AA (SMB) surface mount package, ensuring mechanical and electrical compatibility with existing PCB layouts and assembly processes. Packaging variations (Cut Tape, Tape & Reel) affect supply chain logistics but do not alter component functionality or footprint.

Q: Why do some substitutes have lower forward voltage (Vf) than the original S2D?

A: Forward voltage variation is a normal characteristic of semiconductor manufacturing. Substitute devices with lower forward voltage (900 mV to 950 mV @ 2 A compared to 1.15 V @ 2 A) dissipate less power during conduction. This reduction improves thermal efficiency and may lower overall system power consumption. The lower forward voltage does not affect circuit functionality in standard rectification applications.

Q: Is RoHS compliance important for my application?

A: RoHS compliance is mandatory for products sold in the European Union and increasingly required by global manufacturers and procurement standards. All active substitute devices listed are ROHS3 compliant, whereas the original S2D is non-compliant. If your design or production environment is subject to RoHS directives, selection of a compliant substitute is necessary.

Q: Can I use ES2D or ES2D-13-F as direct replacements for the S2D?

A: Yes. ES2D and ES2D-13-F are full-rated substitutes with identical 200 V and 2 A specifications. Both devices are active products with ROHS3 compliance. The primary differences are faster recovery times (35 ns and 25 ns respectively) and lower forward voltages (950 mV and 920 mV respectively) compared to the original S2D (2 µs, 1.15 V). These differences result in improved performance characteristics without compromising circuit compatibility.

Q: What is the significance of reverse leakage current (Ir)?

A: Reverse leakage current is the small current that flows through the diode when reverse bias is applied. Lower leakage currents (2 µA to 5 µA) indicate better diode quality and reduced power loss during the blocking phase. The original S2D specifies 10 µA @ 200 V. Substitute devices with lower leakage (such as ESH2D-E3/5BT at 2 µA) provide improved efficiency in applications sensitive to standby power consumption.

Q: Which substitute offers the best overall performance?

A: Performance optimization depends on application requirements. ES2D-13-F offers the fastest recovery time (25 ns) and lowest forward voltage (920 mV @ 2 A), making it ideal for high-frequency switching applications. ESH2D-E3/5BT provides the lowest reverse leakage (2 µA) and extended temperature range (-55°C to 175°C), suitable for high-temperature or low-leakage-sensitive circuits. ES2D offers the highest inventory availability (89,400 units) for immediate procurement.

Q: Are there any temperature range limitations I should consider?

A: The original S2D operates from -55°C to 150°C. Most substitute devices maintain this range. ESH2D-E3/5BT extends the upper limit to 175°C, suitable for applications in elevated-temperature environments. CMR1S-02 TR13 PBFREE and S2D-13-F extend the lower limit to -65°C, providing enhanced cold-temperature performance. Verify that the selected substitute's temperature range encompasses your application's thermal requirements.

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