S2B M4G Equivalent & Substitute Parts

Part Overview

The S2B M4G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 2 A average rectified current in a DO-214AA (SMB) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The S2B M4G operates across a junction temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards. Standard recovery characteristics with a reverse recovery time of 1.5 µs and forward voltage of 1.15 V @ 2 A define its electrical performance envelope.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	2	A
Voltage - Forward (Vf) (Max) @ If	1.15 V @ 2 A	V
Reverse Recovery Time (trr)	1.5	µs
Current - Reverse Leakage @ Vr	1	µA @ 100 V
Capacitance @ Vr, F	30	pF @ 4V, 1MHz
Package / Case	DO-214AA, SMB	—
Operating Temperature - Junction	-55 to 150	°C
Speed Classification	Standard Recovery >500ns	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the S2B M4G is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Equivalence Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2 A
Package / Case: DO-214AA (SMB) surface mount
Operating Temperature - Junction: -55°C to 150°C minimum

Secondary Compatibility Factors:

Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A or lower
Reverse Recovery Time (trr): 1.5 µs or faster
Current - Reverse Leakage @ Vr: ≤ 1 µA @ 100 V
Capacitance @ Vr, F: 30 pF @ 4V, 1MHz or lower

Substitute parts are classified into two categories:

Parametric Equivalents: Parts that match all primary criteria and maintain identical or superior electrical characteristics within the specified operating envelope.

Similar Parts: Components that satisfy primary equivalence criteria but exhibit variations in secondary parameters such as forward voltage, reverse recovery time, or reverse leakage current. These variations remain within acceptable ranges for general-purpose rectification applications.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [µs/ns]	Ir @ Vr [µA]	Package	Temp Range [°C]	Product Status
S2B M4G	Taiwan Semiconductor Corporation	100	2	1.15 @ 2A	1.5 µs	1 @ 100V	DO-214AA (SMB)	-55 to 150	Discontinued
S2B	Diotec Semiconductor	100	2	1.15 @ 2A	1.5 µs	5 @ 100V	DO-214AA (SMB)	-50 to 150	Active
S2BH	Taiwan Semiconductor Corporation	100	2	1.15 @ 2A	1.5 µs	1 @ 100V	DO-214AA (SMB)	-55 to 150	Active
CGRB202-G	Comchip Technology	100	2	1.1 @ 2A	≤500 ns	5 @ 100V	DO-214AA (SMB)	-55 to 150	Active
ES2B-13-F	Diodes Incorporated	100	2	0.92 @ 2A	25 ns	5 @ 100V	DO-214AA (SMB)	-55 to 150	Active
ES2BA-13-F	Diodes Incorporated	100	2	0.92 @ 2A	25 ns	5 @ 100V	DO-214AC (SMA)	-55 to 150	Active
ES2BHE3_A/H	Vishay General Semiconductor - Diodes Division	100	2	0.9 @ 2A	20 ns	10 @ 50V	DO-214AA (SMB)	-55 to 150	Active
ES2BHE3_A/I	Vishay General Semiconductor - Diodes Division	100	2	0.9 @ 2A	20 ns	10 @ 50V	DO-214AA (SMB)	-55 to 150	Active
ESH2B-E3/52T	Vishay General Semiconductor - Diodes Division	100	2	0.93 @ 2A	35 ns	2 @ 100V	DO-214AA (SMB)	-55 to 175	Active
ESH2B-E3/5BT	Vishay General Semiconductor - Diodes Division	100	2	0.93 @ 2A	35 ns	2 @ 100V	DO-214AA (SMB)	-55 to 175	Active
ESH2B-M3/52T	Vishay General Semiconductor - Diodes Division	100	2	0.93 @ 2A	35 ns	2 @ 100V	DO-214AA (SMB)	-55 to 175	Active

Engineering Selection Recommendations

Parametric Equivalent - Recommended Primary Substitute:

The S2BH (Taiwan Semiconductor Corporation) is the direct parametric equivalent to the S2B M4G. This part maintains identical electrical specifications including 100 V reverse voltage, 2 A average rectified current, 1.15 V forward voltage @ 2 A, and 1.5 µs reverse recovery time. The S2BH operates across the same junction temperature range (-55°C to 150°C) and is packaged in DO-214AA (SMB). The S2BH carries AEC-Q101 automotive qualification and is currently in active production status, ensuring long-term availability. RoHS3 and REACH compliance are maintained.

Parametric Equivalent - Alternative Substitute:

The S2B (Diotec Semiconductor) provides parametric equivalence with identical voltage, current, and package specifications. The primary distinction is a reduced minimum operating temperature of -50°C (versus -55°C) and elevated reverse leakage current of 5 µA @ 100 V (versus 1 µA). This part is suitable for applications where the -50°C lower temperature limit is acceptable and reverse leakage performance is not critical.

Similar Parts - Fast Recovery Alternatives:

The ES2BHE3_A/I and ES2BHE3_A/H (Vishay General Semiconductor - Diodes Division) offer improved reverse recovery characteristics (20 ns versus 1.5 µs) and lower forward voltage (0.9 V @ 2 A). Both parts carry AEC-Q101 automotive qualification and operate across -55°C to 150°C. These components are suitable for applications requiring faster switching performance. Reverse leakage is specified at 10 µA @ 50 V, which differs from the original specification.

The ES2B-13-F (Diodes Incorporated) provides fast recovery performance (25 ns) with reduced forward voltage (0.92 V @ 2 A) in DO-214AA (SMB) packaging. This part is actively produced and RoHS3 compliant.

Similar Parts - Extended Temperature Range:

The ESH2B-E3/52T, ESH2B-E3/5BT, and ESH2B-M3/52T (Vishay General Semiconductor - Diodes Division) extend the maximum operating temperature to 175°C while maintaining 100 V / 2 A ratings and DO-214AA (SMB) packaging. These parts feature fast recovery characteristics (35 ns) and low reverse leakage (2 µA @ 100 V). Selection of these parts is appropriate for high-temperature applications.

Package Variant:

The ES2BA-13-F (Diodes Incorporated) is electrically equivalent to ES2B-13-F but is packaged in DO-214AC (SMA) instead of DO-214AA (SMB). This part is suitable only if the SMA package footprint is compatible with the application.

High-Volume Alternative:

The CGRB202-G (Comchip Technology) is available in high inventory (16,075 pcs) with 100 V / 2 A specifications and fast recovery characteristics (≤500 ns). Forward voltage is 1.1 V @ 2 A. This part is suitable for cost-sensitive applications with high-volume requirements.

Frequently Asked Questions (FAQ)

Q: Can the S2B M4G be directly replaced with the S2BH?

A: Yes. The S2BH is a parametric equivalent with identical electrical specifications, operating temperature range, and package. The S2BH is currently in active production and carries AEC-Q101 automotive qualification, making it the recommended direct replacement.

Q: What is the difference between standard recovery and fast recovery diodes in this product category?

A: The S2B M4G exhibits standard recovery characteristics with a reverse recovery time of 1.5 µs. Fast recovery alternatives such as ES2BHE3_A/I (20 ns) and ES2B-13-F (25 ns) switch more rapidly, reducing switching losses in high-frequency applications. Standard recovery diodes are suitable for lower-frequency rectification circuits.

Q: Are the Vishay ES2BHE3 variants suitable for automotive applications?

A: Yes. The ES2BHE3_A/I and ES2BHE3_A/H are qualified to AEC-Q101 automotive standards and carry RoHS3 compliance. These parts are suitable for automotive rectification applications requiring fast recovery performance.

Q: Why does the Diotec S2B have a lower minimum operating temperature than the original S2B M4G?

A: The Diotec S2B is specified with a minimum junction temperature of -50°C, whereas the Taiwan Semiconductor S2B M4G is specified at -55°C. Applications requiring operation below -50°C must use the S2BH or other alternatives with -55°C minimum ratings.

Q: Can the ES2BA-13-F (SMA package) be used as a substitute for the S2B M4G (SMB package)?

A: The ES2BA-13-F is electrically equivalent but uses a different surface mount package (DO-214AC SMA versus DO-214AA SMB). Substitution is possible only if the circuit board layout and footprint accommodate the SMA package dimensions. Direct PCB replacement is not feasible without layout modification.

Q: What is the significance of the reverse leakage current specification differences?

A: The S2B M4G specifies 1 µA @ 100 V reverse leakage. Alternatives such as CGRB202-G and ES2B-13-F specify 5 µA @ 100 V. Higher reverse leakage increases standby current consumption. Applications sensitive to leakage current should prioritize parts with lower specifications, such as ESH2B variants (2 µA @ 100 V).

Q: Are all listed substitute parts RoHS3 compliant?

A: All substitute parts listed carry RoHS3 compliance certification. The Diotec S2B does not have RoHS status specified as "Not applicable," indicating it may not carry formal RoHS certification. Applications requiring RoHS3 compliance should use alternatives with explicit ROHS3 Compliant designation.

Q: What is the advantage of selecting ESH2B parts over ES2B parts?

A: The ESH2B series extends the maximum operating temperature to 175°C (versus 150°C for ES2B) and provides lower reverse leakage current (2 µA @ 100 V versus 5 µA). ESH2B parts are suitable for high-temperature applications and designs requiring minimal leakage performance.

Q: Is the CGRB202-G suitable for high-reliability applications?

A: The CGRB202-G is RoHS3 compliant and carries REACH Unaffected status. However, it does not carry automotive qualification (AEC-Q101). For high-reliability or automotive applications, AEC-Q101 qualified alternatives such as S2BH or ES2BHE3 variants are recommended.

Q: What packaging options are available for 100 V / 2 A rectifier diodes in this product category?

A: The primary packaging options are DO-214AA (SMB) and DO-214AC (SMA). All listed substitutes except ES2BA-13-F use DO-214AA (SMB). The ES2BA-13-F uses DO-214AC (SMA). Both packages are surface mount configurations suitable for automated assembly.

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