S2B General Purpose Rectifier Diode - Equivalent & Substitute Parts

Part Overview

The S2B is a general purpose rectifier diode manufactured by Micro Commercial Co, rated for 100V DC reverse voltage and 2A average rectified current in a DO-214AA (SMB) surface mount package. This component is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design and procurement requirements. The S2B operates across a junction temperature range of -55°C to 150°C and exhibits standard recovery characteristics with a reverse recovery time of 2 µs.

Substiute Parts

S2B
Micro Commercial CoIn Stock: 820S2B Datasheet
S2B
Current Part
CGRB202-G
Comchip TechnologyIn Stock: 16130CGRB202-G Datasheet
CGRB202-G
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ES2B
YAGEOIn Stock: 55500ES2B Datasheet
ES2B
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ES2B-13-F
Diodes IncorporatedIn Stock: 2202ES2B-13-F Datasheet
ES2B-13-F
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ES2B-E3/52T
Vishay General Semiconductor - Diodes DivisionIn Stock: 4091ES2B-E3/52T Datasheet
ES2B-E3/52T
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ES2B-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 8205ES2B-E3/5BT Datasheet
ES2B-E3/5BT
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ESH2B-E3/5BT
Vishay General Semiconductor - Diodes DivisionIn Stock: 10407ESH2B-E3/5BT Datasheet
ESH2B-E3/5BT
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S2A
Diotec SemiconductorIn Stock: 7018S2A Datasheet
S2A
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S2B-13-F
Diodes IncorporatedIn Stock: 45190S2B-13-F Datasheet
S2B-13-F
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S2B_R1_00001
Panjit International Inc.In Stock: 1451S2B_R1_00001 Datasheet
S2B_R1_00001
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S2B
Diotec SemiconductorIn Stock: 1183S2B Datasheet
S2B
Parametric Equivalent
S2B
Diotec SemiconductorIn Stock: 1183S2B Datasheet
S2B
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 2 A V
Reverse Recovery Time (trr) 2 µs
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Technology Standard
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the S2B rectifier diode is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100V minimum
  • Current - Average Rectified (Io): 2A minimum
  • Package / Case: DO-214AA (SMB) surface mount
  • Mounting Type: Surface Mount

Secondary Compatibility Factors:

  • Operating Temperature - Junction: -55°C to 150°C minimum range
  • Voltage - Forward (Vf) (Max) @ If: 1.15V or lower at 2A
  • Current - Reverse Leakage @ Vr: 10 µA or lower at 100V
  • Reverse Recovery Time (trr): 2 µs or lower

Substitute parts are classified into two categories:

Direct Equivalents: Parts meeting all primary criteria with identical or superior electrical performance characteristics.

Parametric Equivalents: Parts meeting primary electrical and mechanical criteria with minor variations in secondary parameters such as forward voltage, reverse leakage, or recovery time, provided these variations do not degrade circuit performance.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [µs/ns] Ir @ Vr [µA] Package Product Status RoHS Status
S2B Micro Commercial Co 100 2 1.15 @ 2A 2 µs 10 @ 100V DO-214AA (SMB) Obsolete Non-compliant
CGRB202-G Comchip Technology 100 2 1.1 @ 2A ≤500ns 5 @ 100V DO-214AA (SMB) Active ROHS3 Compliant
ES2B YAGEO 100 2 0.95 DO-214AA (SMB) Active ROHS3 Compliant
ES2B-13-F Diodes Incorporated 100 2 0.92 @ 2A 25 ns 5 @ 100V DO-214AA (SMB) Active ROHS3 Compliant
ES2B-E3/52T Vishay General Semiconductor - Diodes Division 100 2 0.9 @ 2A 30 ns 10 @ 100V DO-214AA (SMB) Active ROHS3 Compliant
ES2B-E3/5BT Vishay General Semiconductor - Diodes Division 100 2 0.9 @ 2A 30 ns 10 @ 100V DO-214AA (SMB) Active ROHS3 Compliant
ESH2B-E3/5BT Vishay General Semiconductor - Diodes Division 100 2 0.93 @ 2A 35 ns 2 @ 100V DO-214AA (SMB) Active ROHS3 Compliant
S2A Diotec Semiconductor 50 2 1.15 @ 2A 1.5 µs 5 @ 50V DO-214AA (SMB) Active ROHS3 Compliant
S2B-13-F Diodes Incorporated 100 1.5 1.15 @ 1.5A 5 @ 100V DO-214AA (SMB) Active ROHS3 Compliant
S2B_R1_00001 Panjit International Inc. 100 2 1.1 @ 2A 1 @ 100V DO-214AA (SMB) Active ROHS3 Compliant
S2B Diotec Semiconductor 100 2 1.15 @ 2A 1.5 µs 5 @ 100V DO-214AA (SMB) Active Not applicable

Engineering Selection Recommendations

Direct Equivalent Substitutes (100V, 2A, DO-214AA):

The following parts provide direct electrical and mechanical equivalence to the S2B and are recommended as primary substitutes:

  • CGRB202-G (Comchip Technology): Active product status with ROHS3 compliance. Forward voltage of 1.1V at 2A and fast recovery characteristics (≤500ns). Reverse leakage reduced to 5 µA at 100V. Suitable for applications requiring improved performance over the original S2B.

  • ES2B-E3/52T (Vishay General Semiconductor - Diodes Division): Active product status with ROHS3 compliance. Forward voltage of 0.9V at 2A with fast recovery (30 ns). Maintains 10 µA reverse leakage at 100V. Available in Cut Tape packaging.

  • ES2B-E3/5BT (Vishay General Semiconductor - Diodes Division): Active product status with ROHS3 compliance. Identical electrical specifications to ES2B-E3/52T with Tape & Reel packaging. Operating temperature range -55°C to 150°C matches the original S2B.

  • S2B_R1_00001 (Panjit International Inc.): Active product status with ROHS3 compliance. Forward voltage of 1.1V at 2A with standard recovery characteristics. Reverse leakage of 1 µA at 100V provides superior leakage performance. Tape & Reel packaging.

  • S2B (Diotec Semiconductor): Active product status. Parametric equivalent with identical electrical specifications to the original S2B (100V, 2A, 1.15V forward voltage, 1.5 µs recovery time). Operating temperature range -50°C to 150°C. RoHS compliance status not applicable.

Conditional Substitutes:

  • ES2B-13-F (Diodes Incorporated): Active product status with ROHS3 compliance. 100V, 2A rating with superior forward voltage (0.92V at 2A) and fast recovery (25 ns). Suitable for applications where reduced forward voltage drop is beneficial.

  • ESH2B-E3/5BT (Vishay General Semiconductor - Diodes Division): Active product status with ROHS3 compliance. 100V, 2A rating with extended operating temperature range (-55°C to 175°C). Reverse leakage of 2 µA at 100V provides superior performance. Fast recovery (35 ns). Suitable for high-temperature applications.

Not Recommended:

  • S2A (Diotec Semiconductor): Voltage rating of 50V does not meet the 100V requirement of the original S2B. Not suitable for direct substitution.

  • S2B-13-F (Diodes Incorporated): Current rating of 1.5A is below the 2A requirement of the original S2B. Not suitable for direct substitution.

  • ES2B (YAGEO): Insufficient technical data provided for complete parameter verification. Use only if full datasheet specifications are confirmed to meet application requirements.

Frequently Asked Questions (FAQ)

Q: Can I substitute the S2B with any of the listed parts without circuit modification?

A: Direct equivalents meeting all primary criteria (100V, 2A, DO-214AA package) can be substituted without circuit modification. These include CGRB202-G, ES2B-E3/52T, ES2B-E3/5BT, and S2B_R1_00001. Conditional substitutes such as ES2B-13-F and ESH2B-E3/5BT offer improved performance characteristics and are compatible with the same circuit topology.

Q: What is the difference between standard recovery and fast recovery diodes?

A: The S2B exhibits standard recovery characteristics with a reverse recovery time of 2 µs. Fast recovery substitutes such as ES2B-13-F (25 ns) and ES2B-E3/52T (30 ns) reduce switching losses and electromagnetic interference. Fast recovery diodes are suitable for high-frequency applications and switching power supplies. Standard recovery diodes are appropriate for low-frequency rectification applications.

Q: Are all substitute parts RoHS compliant?

A: Most active substitute parts listed are ROHS3 compliant. The original S2B is RoHS non-compliant. The Diotec Semiconductor S2B variant has not applicable RoHS status. Verify RoHS compliance requirements for your specific application before final part selection.

Q: What is the significance of forward voltage differences among substitutes?

A: Forward voltage variations (ranging from 0.9V to 1.15V at 2A) affect power dissipation and thermal performance. Lower forward voltage reduces heat generation and improves efficiency. ES2B-13-F (0.92V) and ES2B-E3/52T (0.9V) provide superior efficiency compared to the original S2B (1.15V). Select based on thermal budget and efficiency requirements of your application.

Q: Can I use S2A or S2B-13-F as substitutes?

A: No. S2A has a voltage rating of 50V, which is insufficient for 100V applications. S2B-13-F has a current rating of 1.5A, which is below the 2A requirement. Both parts fail to meet primary substitution criteria and are not suitable replacements.

Q: What packaging options are available for substitute parts?

A: Substitute parts are available in Tape & Reel (TR) and Cut Tape (CT) packaging formats. ES2B-E3/52T is supplied in Cut Tape. ES2B-E3/5BT, CGRB202-G, and S2B_R1_00001 are supplied in Tape & Reel. Verify packaging compatibility with your assembly equipment and procurement requirements.

Q: Which substitute offers the best reverse leakage performance?

A: ESH2B-E3/5BT provides the lowest reverse leakage at 2 µA at 100V, compared to the original S2B at 10 µA. S2B_R1_00001 offers 1 µA reverse leakage. Both are suitable for applications requiring minimal leakage current.

Q: Are there temperature range considerations for substitution?

A: The original S2B operates from -55°C to 150°C. Most substitutes maintain this range. ESH2B-E3/5BT extends the upper limit to 175°C, suitable for high-temperature environments. Verify operating temperature requirements for your specific application.

Q: What is the inventory status of substitute parts?

A: All listed substitute parts are in active production with substantial inventory availability. YAGEO ES2B has the highest inventory (55,400 pcs), followed by Comchip CGRB202-G (16,075 pcs) and Vishay ESH2B-E3/5BT (10,300 pcs). Verify current availability with your component supplier.

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