S2A M4G General Purpose Rectifier Diode – Equivalent & Substitute Parts

Part Overview

The S2A M4G is a general purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AA (SMB) package. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

The S2A M4G operates with standard recovery characteristics (>500 ns) and is suitable for general rectification applications requiring moderate current handling in compact surface mount form factors. RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1) support deployment across diverse industrial and commercial applications.

Key Parameters

Parameter	Value	Unit
Voltage – DC Reverse (Vr) Maximum	50	V
Current – Average Rectified (Io)	2	A
Voltage – Forward (Vf) Maximum @ If	1.15 V @ 2 A	V
Reverse Recovery Time (trr)	1.5	µs
Current – Reverse Leakage @ Vr	1	µA @ 50 V
Capacitance @ Vr, F	30	pF @ 4V, 1MHz
Package / Case	DO-214AA, SMB	—
Operating Temperature – Junction	-55 to 150	°C
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the S2A M4G is determined by the following critical parameters:

Primary Substitution Criteria:

Voltage – DC Reverse (Vr) Maximum: 50 V
Current – Average Rectified (Io): 2 A
Package / Case: DO-214AA (SMB)
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Forward voltage (Vf) at rated current
Reverse recovery time (trr) and recovery speed classification
Reverse leakage current
RoHS3 compliance

Parts are grouped into two categories:

Parametric Equivalents share identical electrical ratings (50 V, 2 A, DO-214AA) with matching or superior performance characteristics. These include S2A (Diotec Semiconductor), S2A R5G (Taiwan Semiconductor Corporation), and S2AH (Taiwan Semiconductor Corporation).

Similar Parts maintain the same voltage and current ratings with DO-214AA packaging but may exhibit variations in forward voltage, recovery characteristics, or temperature specifications. These include CGRB201-G (Comchip Technology), ES2A-13-F (Diodes Incorporated), ES2AA-13-F (Diodes Incorporated), ES2AHE3_A/H (Vishay), ES2AHE3_A/I (Vishay), and ES2AHM3/5BT (Vishay).

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [µs/ns]	Ir @ Vr [µA]	Package	Product Status	Grade
S2A M4G	Taiwan Semiconductor Corporation	50	2	1.15 @ 2A	1.5 µs	1 @ 50V	DO-214AA (SMB)	Discontinued	Standard
S2A	Diotec Semiconductor	50	2	1.15 @ 2A	1.5 µs	5 @ 50V	DO-214AA (SMB)	Active	Standard
S2A R5G	Taiwan Semiconductor Corporation	50	2	1.15 @ 2A	1.5 µs	1 @ 50V	DO-214AA (SMB)	Discontinued	Standard
S2AH	Taiwan Semiconductor Corporation	50	2	1.15 @ 2A	1.5 µs	1 @ 50V	DO-214AA (SMB)	Active	Automotive (AEC-Q101)
CGRB201-G	Comchip Technology	50	2	1.1 @ 2A	1.5 µs	5 @ 50V	DO-214AA (SMB)	Active	Standard
ES2A-13-F	Diodes Incorporated	50	2	0.92 @ 2A	25 ns	5 @ 50V	DO-214AA (SMB)	Active	Standard
ES2AHE3_A/H	Vishay General Semiconductor	50	2	0.9 @ 2A	20 ns	10 @ 50V	DO-214AA (SMB)	Active	Automotive (AEC-Q101)
ES2AHE3_A/I	Vishay General Semiconductor	50	2	0.9 @ 2A	20 ns	10 @ 50V	DO-214AA (SMB)	Active	Automotive (AEC-Q101)
ES2AHM3/5BT	Vishay General Semiconductor	50	2	0.9 @ 2A	30 ns	10 @ 50V	DO-214AA (SMB)	Active	Standard

Engineering Selection Recommendations

Primary Recommendation – Parametric Equivalent:

The S2AH (Taiwan Semiconductor Corporation) is the preferred direct substitute for the S2A M4G. This part maintains identical electrical specifications (50 V, 2 A, 1.15 V forward voltage, 1.5 µs recovery time) and package configuration (DO-214AA SMB). The S2AH is currently active in production and carries AEC-Q101 automotive qualification, providing enhanced reliability assurance. Operating temperature range (-55°C to 150°C) and RoHS3 compliance match the original specification.

Secondary Recommendation – Standard Recovery Equivalent:

The S2A (Diotec Semiconductor) provides parametric equivalence with identical voltage, current, and forward voltage ratings. This part is active and widely available. The reverse leakage current specification (5 µA @ 50 V) is higher than the original (1 µA @ 50 V) but remains within acceptable limits for general purpose rectification. Standard recovery characteristics (1.5 µs) are maintained.

Alternative for Fast Recovery Applications:

The ES2AHE3_A/H and ES2AHE3_A/I (Vishay General Semiconductor) offer fast recovery characteristics (20 ns trr) with lower forward voltage (0.9 V @ 2 A) compared to the S2A M4G. These parts carry AEC-Q101 automotive qualification and are suitable for applications requiring reduced switching losses. Higher reverse leakage current (10 µA @ 50V) must be evaluated against application requirements.

General Purpose Alternative:

The CGRB201-G (Comchip Technology) provides standard recovery performance with slightly reduced forward voltage (1.1 V @ 2 A). This part is active with high inventory availability and maintains full DO-214AA SMB compatibility.

Package Consideration:

The ES2AA-13-F (Diodes Incorporated) is functionally equivalent but uses SMA package (DO-214AC) instead of SMB (DO-214AA). This part is suitable only if PCB layout permits SMA footprint substitution.

Frequently Asked Questions (FAQ)

Q: Can the S2A M4G be directly replaced with the S2AH?

A: Yes. The S2AH provides direct parametric equivalence with identical voltage (50 V), current (2 A), forward voltage (1.15 V @ 2 A), and package (DO-214AA SMB). The S2AH is currently in active production and carries AEC-Q101 automotive qualification.

Q: What is the difference between standard recovery and fast recovery diodes in this comparison?

A: The S2A M4G exhibits standard recovery characteristics with reverse recovery time (trr) of 1.5 µs. Fast recovery alternatives such as ES2A-13-F and ES2AHE3_A/H feature trr values of 25 ns and 20 ns respectively. Fast recovery diodes reduce switching losses and are suitable for higher frequency applications but exhibit lower forward voltage and different leakage characteristics.

Q: Is the Diotec S2A suitable as a substitute despite higher reverse leakage current?

A: Yes. The Diotec S2A maintains all critical electrical parameters (50 V, 2 A, 1.15 V forward voltage, 1.5 µs recovery time) and DO-214AA SMB packaging. The reverse leakage current of 5 µA @ 50 V (versus 1 µA for the original) is acceptable for general purpose rectification applications. Application-specific leakage requirements must be verified.

Q: Why is the ES2AA-13-F listed as a similar part rather than a direct substitute?

A: The ES2AA-13-F uses SMA package (DO-214AC) instead of SMB (DO-214AA). While electrical specifications are compatible, the different package footprint requires PCB layout modification. Direct substitution on existing boards is not possible without rework.

Q: Can I use CGRB301-G (3 A rated) instead of the S2A M4G (2 A rated)?

A: The CGRB301-G is rated for 3 A average rectified current, exceeding the 2 A requirement of the S2A M4G. While this provides additional current margin, it is not a direct parametric equivalent. Use is acceptable only if circuit design permits the higher current rating and if thermal management accommodates the different device characteristics.

Q: What does AEC-Q101 qualification indicate?

A: AEC-Q101 is an automotive electronics qualification standard. Parts carrying this qualification (S2AH, ES2AHE3_A/H, ES2AHE3_A/I) have undergone enhanced reliability testing and are suitable for automotive and high-reliability applications. Non-qualified parts (S2A, CGRB201-G, ES2A-13-F) are suitable for general industrial and commercial use.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All parts listed in this reference maintain RoHS3 compliance, confirming absence of restricted substances (lead, cadmium, hexavalent chromium, polybrominated biphenyls, polybrominated diphenyl ethers, and bis(2-ethylhexyl) phthalate).

Q: What is the significance of the 30 pF capacitance specification?

A: The capacitance value (30 pF @ 4V, 1MHz) represents the junction capacitance of the diode. This parameter affects high-frequency performance and switching characteristics. Substitutes with different capacitance values (such as ES2A-13-F at 25 pF) may exhibit slightly different behavior in RF or high-speed switching applications.

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