S1N-13-F Equivalent & Substitute Parts

Part Overview

The S1N-13-F is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 1200 V DC reverse voltage and 1 A average rectified current in a surface mount SMA package. This component is classified as Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical ratings and mechanical compatibility are required for design flexibility, inventory management, or supply chain continuity while maintaining circuit performance specifications.

Substiute Parts

S1N-13-F

Diodes IncorporatedIn Stock: 824S1N-13-F Datasheet

Current PartRFQ

GS1N_R1_00001

Panjit International Inc.In Stock: 2183GS1N_R1_00001 Datasheet

MFR RecommendedRFQ

STTH112A

STMicroelectronicsIn Stock: 65134STTH112A Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the S1N-13-F are qualified based on the following critical parameters:

Electrical Equivalence Criteria:

• Voltage - DC Reverse (Vr) (Max): 1200 V minimum
• Current - Average Rectified (Io): 1 A minimum
• Operating Temperature - Junction: Compatible range with primary application requirements

Mechanical Compatibility Criteria:

• Package / Case: DO-214AC, SMA form factor
• Mounting Type: Surface Mount
• Supplier Device Package: SMA

Compliance & Quality Criteria:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Product Status: Active

All identified substitute parts meet or exceed these core parameters, ensuring direct functional replacement capability in circuit applications designed for the S1N-13-F.

Parameter Comparison

Engineering Selection Recommendations

GS1N_R1_00001 (Panjit International Inc.): This substitute part maintains identical voltage and current ratings with standard recovery speed characteristics matching the S1N-13-F. The GS1N_R1_00001 demonstrates lower reverse leakage current (1 µA versus 5 µA) and higher capacitance (12 pF versus 6 pF), both within acceptable ranges for general-purpose rectification applications. All compliance certifications align with the primary part. This substitute is suitable for direct replacement in applications where standard recovery speed performance is required.

STTH112A (STMicroelectronics): This substitute part meets the core voltage and current specifications with enhanced fast recovery speed characteristics (≤500 ns versus >500 ns). The STTH112A exhibits higher forward voltage drop (1.9 V @ 1 A versus unspecified for S1N-13-F) and extended maximum junction temperature rating (175°C versus 150°C). All compliance certifications are maintained. This substitute is applicable in applications where faster switching performance and higher thermal headroom are beneficial or required.

Frequently Asked Questions (FAQ)

Q: Can the GS1N_R1_00001 be used as a direct replacement for the S1N-13-F? A: Yes. Both parts share identical voltage (1200 V), current (1 A), package (DO-214AC, SMA), and operating temperature range (-55°C to 150°C) specifications. The GS1N_R1_00001 is electrically and mechanically compatible for direct substitution in circuits designed for the S1N-13-F.

Q: What is the primary difference between the STTH112A and the S1N-13-F? A: The STTH112A features fast recovery speed (≤500 ns) compared to the S1N-13-F standard recovery speed (>500 ns). Additionally, the STTH112A has a higher forward voltage drop (1.9 V @ 1 A) and extended maximum junction temperature (175°C). These characteristics make the STTH112A suitable for applications requiring faster switching or higher thermal tolerance.

Q: Are all substitute parts available in the same package? A: Yes. All substitute parts use the DO-214AC, SMA surface mount package, ensuring mechanical compatibility with PCB layouts designed for the S1N-13-F.

Q: Do the substitute parts meet the same compliance standards? A: Yes. Both GS1N_R1_00001 and STTH112A are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the compliance profile of the S1N-13-F.

Q: Which substitute part should be selected for high-speed switching applications? A: The STTH112A is specified for fast recovery operation (≤500 ns) and is appropriate for applications requiring faster switching transitions compared to standard recovery diodes.

Q: What is the impact of the different reverse leakage current values? A: The GS1N_R1_00001 exhibits lower reverse leakage (1 µA @ 1200 V) compared to the S1N-13-F (5 µA @ 1200 V). Lower leakage current reduces power dissipation in reverse bias conditions and may improve circuit efficiency in applications with extended reverse bias periods.