S1M Equivalent & Substitute Parts

Part Overview

The onsemi S1M is a 1000 V, 1 A surface mount rectifier diode in DO-214AC (SMA) package with standard recovery characteristics. This component is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product portfolio. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design updates, or alternative sourcing options while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	1000 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A
Speed Classification	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.8 µs
Current - Reverse Leakage @ Vr	1 µA @ 1000 V
Capacitance @ Vr, F	12 pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA
Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 150°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the S1M are classified based on electrical parameter compatibility and mechanical interchangeability. The primary substitution criteria are:

Critical Parameters for Substitution:

Voltage - DC Reverse (Vr) (Max): 1000 V or higher
Current - Average Rectified (Io): 1 A minimum
Package / Case: DO-214AC (SMA) or compatible surface mount package
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Substitution Categories:

Direct Equivalents maintain all critical electrical parameters (1000 V, 1 A, 1.1 V forward voltage, standard recovery) in DO-214AC (SMA) package with identical or superior performance characteristics.

Parametric Equivalents meet voltage and current requirements with minor variations in forward voltage, recovery time, or leakage current while maintaining package compatibility.

Similar Alternatives provide functional equivalence with voltage or package variations that may require circuit evaluation but offer active product status or enhanced specifications.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	trr	Ir @ Vr	Package	Product Status	Temp Range
S1M	onsemi	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	1.8 µs	1 µA @ 1000 V	DO-214AC (SMA)	Not For New Designs	-55°C ~ 150°C
MRA4007T3G	onsemi	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	—	10 µA @ 1000 V	DO-214AC (SMA)	Not For New Designs	-55°C ~ 175°C
RS1K	Fairchild Semiconductor	800 V	1 A	1.3 V @ 1 A	Fast ≤500ns	500 ns	5 µA @ 800 V	DO-214AC (SMA)	Active	-55°C ~ 150°C
RS1M	EVVO Semi	1000 V	1 A	1.3 V @ 1 A	Fast ≤500ns	500 ns	5 µA @ 1 kV	DO-214AC (SMA)	Active	-55°C ~ 150°C
S1K	YAGEO	800 V	1 A	—	—	—	—	DO-214AC	Active	—
NRVA4007T3G	onsemi	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	—	10 µA @ 1000 V	DO-214AC (SMA)	Not For New Designs	-55°C ~ 150°C
CMR1-10M TR13 PBFREE	Central Semiconductor Corp	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	—	5 µA @ 1000 V	DO-214AC (SMA)	Active	-65°C ~ 150°C
S1M-13-F	Diodes Incorporated	1000 V	1 A	1.1 V @ 1 A	Standard >500ns	3 µs	5 µA @ 1000 V	DO-214AC (SMA)	Active	-65°C ~ 150°C
GF1K-E3/67A	Vishay General Semiconductor	800 V	1 A	1.2 V @ 1 A	Standard >500ns	2 µs	5 µA @ 800 V	DO-214BA (GF1)	Active	-65°C ~ 175°C
GF1M-E3/5CA	Vishay General Semiconductor	1000 V	1 A	1.2 V @ 1 A	Standard >500ns	2 µs	5 µA @ 1000 V	DO-214BA (GF1)	Active	-65°C ~ 175°C
GF1M-E3/67A	Vishay General Semiconductor	1000 V	1 A	1.2 V @ 1 A	Standard >500ns	2 µs	5 µA @ 1000 V	DO-214BA (GF1)	Active	-65°C ~ 175°C

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical and Mechanical Specifications):

The S1M-13-F (Diodes Incorporated) provides the most direct replacement. It maintains 1000 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, standard recovery characteristics, and DO-214AC (SMA) package compatibility. This part carries Active product status and ROHS3 compliance with extended operating temperature range (-65°C ~ 150°C). Reverse recovery time of 3 µs is slightly higher than the original 1.8 µs but remains within standard recovery classification.

CMR1-10M TR13 PBFREE (Central Semiconductor Corp) is an alternative direct equivalent with Active status, identical electrical parameters, and extended lower temperature limit (-65°C). This part is available in Tape & Reel packaging.

For Parametric Equivalence with Active Product Status:

The RS1M (EVVO Semi) maintains 1000 V voltage rating and 1 A current with Active product status. It features faster recovery characteristics (500 ns trr, ≤500ns speed classification) and lower reverse leakage (5 µA @ 1 kV) compared to the S1M. Forward voltage is 1.3 V @ 1 A, representing a 0.2 V increase. This part is suitable for applications where improved switching performance is beneficial and forward voltage variation is acceptable.

For Voltage-Reduced Alternatives:

The RS1K (Fairchild Semiconductor) and GF1K-E3/67A (Vishay) provide 800 V reverse voltage rating with 1 A current capacity and Active product status. These parts are applicable only in circuits where the maximum reverse voltage requirement is 800 V or lower. RS1K offers fast recovery (500 ns) in DO-214AC (SMA) package. GF1K-E3/67A provides standard recovery in DO-214BA (GF1) package with extended temperature range (-65°C ~ 175°C).

For 1000 V Alternatives with Package Variation:

The GF1M-E3/5CA and GF1M-E3/67A (Vishay General Semiconductor, SUPERECTIFIER® series) maintain 1000 V and 1 A specifications with Active product status and extended temperature range (-65°C ~ 175°C). These parts use DO-214BA (GF1) package instead of DO-214AC (SMA), requiring PCB layout modification. Forward voltage is 1.2 V @ 1 A with improved reverse recovery time (2 µs).

For Legacy System Continuity:

The MRA4007T3G and NRVA4007T3G (both onsemi) provide parametric equivalence with identical forward voltage (1.1 V @ 1 A) and standard recovery characteristics. Both carry "Not For New Designs" status. NRVA4007T3G includes AEC-Q101 automotive qualification. These parts are suitable for sustaining existing designs but not recommended for new development.

Frequently Asked Questions (FAQ)

Q: Can the S1M be replaced with a lower voltage rated diode such as RS1K (800 V)?

A: Substitution with lower voltage-rated parts is only permissible if the circuit's maximum reverse voltage requirement does not exceed 800 V. The S1M is rated for 1000 V reverse voltage. Using an 800 V part in a 1000 V application creates risk of diode failure. Verify the actual reverse voltage stress in your circuit before selecting a lower-rated substitute.

Q: What is the difference between DO-214AC (SMA) and DO-214BA (GF1) packages?

A: Both are surface mount rectifier packages with identical electrical performance but different physical dimensions and land patterns. DO-214AC (SMA) and DO-214BA (GF1) are not mechanically interchangeable without PCB redesign. Verify your PCB footprint before selecting parts with different package designations.

Q: Is the S1M-13-F (Diodes Incorporated) a direct replacement for the S1M?

A: Yes. The S1M-13-F maintains all critical electrical parameters: 1000 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, standard recovery characteristics, and DO-214AC (SMA) package. The reverse recovery time of 3 µs is slightly higher than the original 1.8 µs but remains within standard recovery classification. This part has Active product status, making it suitable for new designs.

Q: Why does the MRA4007T3G show higher reverse leakage current (10 µA) compared to the S1M (1 µA)?

A: Reverse leakage current variation within the same voltage and current rating is a normal manufacturing parameter spread. The MRA4007T3G's 10 µA leakage at 1000 V remains acceptable for general-purpose rectification applications. Verify leakage current requirements in your specific circuit before substitution.

Q: Can RS1M (EVVO Semi) be used as a substitute despite its higher forward voltage (1.3 V vs. 1.1 V)?

A: The RS1M can be substituted if the circuit design accommodates the additional 0.2 V forward voltage drop. This affects power dissipation and voltage regulation. Calculate the impact on your specific application. The RS1M offers advantages of faster recovery (500 ns) and lower reverse leakage (5 µA), which may benefit switching performance in some circuits.

Q: What does "Not For New Designs" status mean for the S1M?

A: "Not For New Designs" indicates the manufacturer has discontinued active development and recommends against using this part in new product designs. Existing inventory may remain available, but long-term supply is not guaranteed. For new designs, select parts with Active product status such as S1M-13-F, CMR1-10M, or RS1M.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this reference carry ROHS3 compliance status, matching the original S1M. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Q: What is the significance of the Reverse Recovery Time (trr) parameter?

A: Reverse recovery time indicates how quickly the diode transitions from conducting to blocking state. The S1M has trr of 1.8 µs (standard recovery). Faster recovery times (such as RS1M at 500 ns) reduce switching losses and electromagnetic interference in high-frequency applications. Slower recovery times have minimal impact in low-frequency or DC rectification circuits.

Q: Can GF1M-E3/5CA or GF1M-E3/67A be used as direct replacements?

A: These Vishay parts provide electrical equivalence (1000 V, 1 A, standard recovery) but use DO-214BA (GF1) package instead of DO-214AC (SMA). Direct PCB substitution is not possible without footprint modification. However, they offer advantages of Active product status and extended temperature range (-65°C ~ 175°C). Evaluate package compatibility before selection.

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