S1JL Equivalent & Substitute Parts

Part Overview

The S1JL is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package (DO-219AB). This component is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for ongoing production support, field repairs, and design transitions to active alternatives that maintain electrical and mechanical compatibility.

Substiute Parts

S1JL
Taiwan Semiconductor CorporationIn Stock: 20289S1JL Datasheet
S1JL
Current Part
S1JLW
Taiwan Semiconductor CorporationIn Stock: 904S1JLW Datasheet
S1JLW
MFR Recommended
S1JL MHG
Taiwan Semiconductor CorporationIn Stock: 767S1JL MHG Datasheet
S1JL MHG
Parametric Equivalent
S1JL MQG
Taiwan Semiconductor CorporationIn Stock: 981S1JL MQG Datasheet
S1JL MQG
Parametric Equivalent
S1JL MTG
Taiwan Semiconductor CorporationIn Stock: 1124S1JL MTG Datasheet
S1JL MTG
Parametric Equivalent
S1JL RFG
Taiwan Semiconductor CorporationIn Stock: 966S1JL RFG Datasheet
S1JL RFG
Parametric Equivalent
S1JL RHG
Taiwan Semiconductor CorporationIn Stock: 904S1JL RHG Datasheet
S1JL RHG
Parametric Equivalent
S1JL RQG
Taiwan Semiconductor CorporationIn Stock: 950S1JL RQG Datasheet
S1JL RQG
Parametric Equivalent
S1JL RTG
Taiwan Semiconductor CorporationIn Stock: 728S1JL RTG Datasheet
S1JL RTG
Parametric Equivalent
S1JL RUG
Taiwan Semiconductor CorporationIn Stock: 983S1JL RUG Datasheet
S1JL RUG
Parametric Equivalent
S1JL RVG
Taiwan Semiconductor CorporationIn Stock: 7724S1JL RVG Datasheet
S1JL RVG
Parametric Equivalent
S1JLH
Taiwan Semiconductor CorporationIn Stock: 19260S1JLH Datasheet
S1JLH
Parametric Equivalent
S1JLHM2G
Taiwan Semiconductor CorporationIn Stock: 911S1JLHM2G Datasheet
S1JLHM2G
Parametric Equivalent
S1JLHMHG
Taiwan Semiconductor CorporationIn Stock: 865S1JLHMHG Datasheet
S1JLHMHG
Parametric Equivalent
S1JLHMQG
Taiwan Semiconductor CorporationIn Stock: 771S1JLHMQG Datasheet
S1JLHMQG
Parametric Equivalent
S1JLHMTG
Taiwan Semiconductor CorporationIn Stock: 1133S1JLHMTG Datasheet
S1JLHMTG
Parametric Equivalent
S1JLHR3G
Taiwan Semiconductor CorporationIn Stock: 936S1JLHR3G Datasheet
S1JLHR3G
Parametric Equivalent
S1JLHRFG
Taiwan Semiconductor CorporationIn Stock: 675S1JLHRFG Datasheet
S1JLHRFG
Parametric Equivalent
S1JLHRHG
Taiwan Semiconductor CorporationIn Stock: 898S1JLHRHG Datasheet
S1JLHRHG
Parametric Equivalent
S1JLHRQG
Taiwan Semiconductor CorporationIn Stock: 685S1JLHRQG Datasheet
S1JLHRQG
Parametric Equivalent
S1JLHRTG
Taiwan Semiconductor CorporationIn Stock: 1038S1JLHRTG Datasheet
S1JLHRTG
Parametric Equivalent
S1JLHRUG
Taiwan Semiconductor CorporationIn Stock: 1054S1JLHRUG Datasheet
S1JLHRUG
Parametric Equivalent
S1JLR2G
Taiwan Semiconductor CorporationIn Stock: 990S1JLR2G Datasheet
S1JLR2G
Parametric Equivalent
RS1006FL_R1_00001
Panjit International Inc.In Stock: 20398RS1006FL_R1_00001 Datasheet
RS1006FL_R1_00001
Similar
S1FLJ-M-18
Vishay General Semiconductor - Diodes DivisionIn Stock: 999S1FLJ-M-18 Datasheet
S1FLJ-M-18
Similar
VS-2EFU06-M3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 10294VS-2EFU06-M3/I Datasheet
VS-2EFU06-M3/I
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.1 @ 1 A V
Reverse Recovery Time (trr) 1.8 µs
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 9 pF @ 4V, 1MHz
Package / Case DO-219AB Sub SMA
Operating Temperature - Junction -55 to 175 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the S1JL are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents (Same Package, Identical Electrical Specifications): Parts that maintain the DO-219AB Sub SMA package and all core electrical parameters (600 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage, 1.8 µs reverse recovery time, 5 µA reverse leakage, 9 pF capacitance) are classified as parametric equivalents. These parts differ only in manufacturing date codes or internal process variations. Parametric equivalents include: S1JL MHG, S1JL MQG, S1JL MTG, S1JL RFG, S1JL RHG, S1JL RQG, S1JL RTG, S1JL RUG, and S1JL RVG. All parametric equivalents carry Active product status.

Functional Equivalent (Different Package, Equivalent Electrical Performance): The S1JLW is a functional equivalent that maintains the same core electrical specifications (600 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage) but uses the SOD-123W surface mount package instead of Sub SMA. This part is suitable for applications where package footprint differences are acceptable. The S1JLW carries Active product status and represents the manufacturer-recommended upgrade path.

Substitution logic is based strictly on the following parameters:

  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Reverse Recovery Time (trr): 1.8 µs (for parametric equivalents only)
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V (for parametric equivalents only)
  • Capacitance @ Vr, F: 9 pF @ 4V, 1MHz (for parametric equivalents only)
  • Mounting Type: Surface Mount
  • Operating Temperature - Junction: -55°C to 175°C

Parameter Comparison

Part Number Manufacturer Product Status Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [µs] Ir @ Vr [µA] Package Inventory [Pcs]
S1JL Taiwan Semiconductor Corporation Not For New Designs 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 20200
S1JL MHG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 749
S1JL MQG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 875
S1JL MTG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 1018
S1JL RFG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 941
S1JL RHG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 852
S1JL RQG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 897
S1JL RTG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 649
S1JL RUG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 944
S1JL RVG Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A 1.8 5 @ 600 V DO-219AB (Sub SMA) 7700
S1JLW Taiwan Semiconductor Corporation Active 600 1 1.1 @ 1 A Not Specified 1 @ 600 V SOD-123W 833

Engineering Selection Recommendations

For Direct Replacement (Same Package, Same Footprint): When PCB layout and mechanical constraints require the DO-219AB Sub SMA package, select from the parametric equivalent parts: S1JL MHG, S1JL MQG, S1JL MTG, S1JL RFG, S1JL RHG, S1JL RQG, S1JL RTG, S1JL RUG, or S1JL RVG. All of these parts are Active status and maintain identical electrical specifications to the S1JL. Selection among these parametric equivalents may be based on inventory availability. S1JL RVG offers the highest inventory level at 7700 pieces.

For New Designs and Long-Term Availability: The S1JLW is the manufacturer-recommended substitute and carries Active product status, ensuring continued availability and support. This part is suitable for applications where the SOD-123W package footprint is compatible with the circuit board design. The S1JLW maintains the same voltage and current ratings as the S1JL. The reduced reverse leakage current (1 µA versus 5 µA) represents an improvement in performance characteristics.

Compliance and Regulatory Considerations: All substitute parts listed are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating. All parts operate across the same temperature range (-55°C to 175°C junction temperature). These characteristics ensure compatibility with current manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can S1JL parametric equivalents be used interchangeably on the same PCB? A: Yes. Parts such as S1JL MHG, S1JL MQG, S1JL MTG, S1JL RFG, S1JL RHG, S1JL RQG, S1JL RTG, S1JL RUG, and S1JL RVG share identical electrical specifications and the same DO-219AB Sub SMA package. They are direct mechanical and electrical substitutes and require no circuit modifications.

Q: What is the difference between S1JL and S1JLW? A: The primary difference is the package type. The S1JL uses the DO-219AB Sub SMA package, while the S1JLW uses the SOD-123W package. Both maintain 600 V reverse voltage and 1 A average rectified current ratings. The S1JLW has lower reverse leakage current (1 µA versus 5 µA). PCB layout modifications are required to accommodate the different package footprint.

Q: Why is the S1JL marked "Not For New Designs"? A: The S1JL has reached end-of-life status. Taiwan Semiconductor Corporation recommends using Active alternatives such as S1JLW or the parametric equivalents (S1JL MHG, S1JL MQG, S1JL MTG, S1JL RFG, S1JL RHG, S1JL RQG, S1JL RTG, S1JL RUG, S1JL RVG) for new product development to ensure long-term supply continuity.

Q: Are all substitute parts RoHS compliant? A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the operating temperature range for these diodes? A: All parts, including the S1JL and all substitutes, operate across a junction temperature range of -55°C to 175°C.

Q: Which substitute part has the highest inventory availability? A: S1JL RVG has the highest inventory level at 7700 pieces, followed by S1JL MTG at 1018 pieces.

Q: Can the S1JLW be used as a drop-in replacement without PCB modifications? A: No. The S1JLW uses the SOD-123W package, which has a different footprint than the S1JL's DO-219AB Sub SMA package. PCB layout modifications are required. For true drop-in replacement without PCB changes, use parametric equivalents such as S1JL RVG.

Q: What parameters determine substitution eligibility? A: Substitution is determined by matching the following parameters: Voltage - DC Reverse (Vr) (Max) of 600 V, Current - Average Rectified (Io) of 1 A, Voltage - Forward (Vf) (Max) @ If of 1.1 V @ 1 A, and for parametric equivalents, Reverse Recovery Time (trr) of 1.8 µs, Current - Reverse Leakage @ Vr of 5 µA @ 600 V, and Capacitance @ Vr, F of 9 pF @ 4V, 1MHz. Package type and mounting method must also be compatible with the application.

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