Equivalent & Substitute Parts for S1D-M3/5AT

Part Overview

The S1D-M3/5AT is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount diode operates at 200 V DC reverse voltage with 1 A average rectified current in a DO-214AC (SMA) package. The part is currently Active and widely used in power supply and rectification applications.

Substitute parts become necessary when the primary part reaches end-of-life status, when alternative packaging formats are required for manufacturing processes, or when design requirements call for enhanced performance characteristics such as faster recovery times or lower forward voltage drops.

Substiute Parts

S1D-M3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1035S1D-M3/5AT Datasheet
S1D-M3/5AT
Current Part
CS1D-E3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 2230CS1D-E3/I Datasheet
CS1D-E3/I
Parametric Equivalent
S1D-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1027S1D-E3/5AT Datasheet
S1D-E3/5AT
Parametric Equivalent
S1D-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 126135S1D-E3/61T Datasheet
S1D-E3/61T
Parametric Equivalent
S1DHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 2957S1DHE3_A/H Datasheet
S1DHE3_A/H
Parametric Equivalent
S1DHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 6250S1DHE3_A/I Datasheet
S1DHE3_A/I
Parametric Equivalent
EGF1D
onsemiIn Stock: 300362EGF1D Datasheet
EGF1D
MFR Recommended
ES1D
EVVO SemiIn Stock: 140421ES1D Datasheet
ES1D
MFR Recommended
ES1D-13-F
Diodes IncorporatedIn Stock: 550426ES1D-13-F Datasheet
ES1D-13-F
MFR Recommended
GF1D
Fairchild SemiconductorIn Stock: 18487GF1D Datasheet
GF1D
MFR Recommended
STTH102A
STMicroelectronicsIn Stock: 10338STTH102A Datasheet
STTH102A
MFR Recommended
STTH102AY
STMicroelectronicsIn Stock: 31268STTH102AY Datasheet
STTH102AY
MFR Recommended
STTH1R02A
STMicroelectronicsIn Stock: 1738STTH1R02A Datasheet
STTH1R02A
MFR Recommended
STTH2R02A
STMicroelectronicsIn Stock: 116772STTH2R02A Datasheet
STTH2R02A
MFR Recommended
GS1D_R1_00001
Panjit International Inc.In Stock: 2208GS1D_R1_00001 Datasheet
GS1D_R1_00001
Parametric Equivalent
GS1DWG_R1_00001
Panjit International Inc.In Stock: 2211GS1DWG_R1_00001 Datasheet
GS1DWG_R1_00001
Parametric Equivalent
S1D
YAGEOIn Stock: 6087S1D Datasheet
S1D
Parametric Equivalent
S1D-HF
Comchip TechnologyIn Stock: 3831S1D-HF Datasheet
S1D-HF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A V
Reverse Recovery Time (trr) 1.8 µs
Current - Reverse Leakage @ Vr 1 µA @ 200 V
Capacitance @ Vr, F 12 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA -
Operating Temperature - Junction -55 to 150 °C
Mounting Type Surface Mount -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitute parts for the S1D-M3/5AT are classified based on electrical parameter compatibility and packaging format. The primary substitution criteria are:

Critical Parameters (Must Match):

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount

Secondary Parameters (Allow Variation Within Limits):

  • Voltage - Forward (Vf) (Max) @ If: Range 920 mV to 1.1 V @ 1 A
  • Reverse Recovery Time (trr): Range 20 ns to 2 µs
  • Current - Reverse Leakage @ Vr: Range 1 µA to 10 µA @ 200 V
  • Capacitance @ Vr, F: Range 6 pF to 20 pF @ 4V, 1MHz
  • Operating Temperature - Junction: Minimum -55°C, Maximum 150°C or higher

Packaging Format Variants:

  • Tape & Reel (TR)
  • Cut Tape (CT) & Digi-Reel®

Substitutes are further categorized by product status (Active, Obsolete, Not For New Designs) and manufacturer origin (Vishay, onsemi, EVVO Semi, Diodes Incorporated, Fairchild Semiconductor, STMicroelectronics).

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] trr [µs/ns] Ir @ Vr [µA] C @ Vr [pF] Tj (Max) [°C] Product Status Packaging
S1D-M3/5AT Vishay 200 1 1.1 @ 1A 1.8 µs 1 @ 200V 12 @ 4V 150 Active Tape & Reel
CS1D-E3/I Vishay 200 1 1.1 @ 1A 1.5 µs 5 @ 200V 6 @ 4V 150 Obsolete Cut Tape & Digi-Reel
S1D-E3/5AT Vishay 200 1 1.1 @ 1A 1.8 µs 1 @ 200V 12 @ 4V 150 Active Cut Tape & Digi-Reel
S1D-E3/61T Vishay 200 1 1.1 @ 1A 1.8 µs 1 @ 200V 12 @ 4V 150 Active Tape & Reel
S1DHE3_A/H Vishay 200 1 1.1 @ 1A 1.8 µs 1 @ 200V 12 @ 4V 150 Active Tape & Reel
S1DHE3_A/I Vishay 200 1 1.1 @ 1A 1.8 µs 1 @ 200V 12 @ 4V 150 Active Tape & Reel
EGF1D onsemi 200 1 1.0 @ 1A 0.050 µs 10 @ 200V 15 @ 4V 175 Not For New Designs Cut Tape & Digi-Reel
ES1D EVVO Semi 200 1 1.0 @ 1A 0.035 µs 5 @ 200V 15 @ 4V 150 Active Cut Tape & Digi-Reel
ES1D-13-F Diodes Incorporated 200 1 0.92 @ 1A 0.025 µs 5 @ 200V 20 @ 4V 150 Active Cut Tape & Digi-Reel
GF1D Fairchild Semiconductor 200 1 1.0 @ 1A 2.0 µs 5 @ 200V 15 @ 4V 175 Active -
STTH102A STMicroelectronics 200 1 0.97 @ 1A 0.020 µs 1 @ 200V - 175 Active Cut Tape & Digi-Reel

Engineering Selection Recommendations

Vishay S1D Series (Direct Electrical Equivalents):

S1D-E3/5AT and S1D-E3/61T are direct electrical equivalents to the S1D-M3/5AT with identical electrical characteristics. The primary difference is packaging format: S1D-E3/5AT is supplied in Cut Tape & Digi-Reel format, while S1D-E3/61T is supplied in Tape & Reel format. Both parts are Active status and suitable for new designs.

S1DHE3_A/H and S1DHE3_A/I are automotive-grade variants with AEC-Q101 qualification. These parts maintain identical electrical specifications to the main part and are Active status. Selection of these variants is appropriate when automotive qualification requirements apply.

CS1D-E3/I is an obsolete Vishay part with marginally different electrical characteristics (lower reverse recovery time of 1.5 µs, higher reverse leakage of 5 µA, lower capacitance of 6 pF). This part should not be selected for new designs.

Alternative Manufacturer Options:

ES1D-13-F (Diodes Incorporated) and ES1D (EVVO Semi) are Active status parts with faster recovery characteristics (25 ns and 35 ns respectively) compared to the S1D-M3/5AT (1.8 µs). These parts feature lower forward voltage drops (920 mV to 1.0 V) and are suitable when improved switching performance is required.

STTH102A (STMicroelectronics) is an Active status part with the fastest recovery time (20 ns) and lowest forward voltage (970 mV). This part maintains reverse leakage matching the main part (1 µA @ 200 V) and supports extended junction temperature to 175°C.

GF1D (Fairchild Semiconductor) is an Active status part with standard recovery characteristics (2.0 µs) and extended junction temperature range to 175°C.

EGF1D (onsemi) carries "Not For New Designs" status and should be avoided for new applications despite its fast recovery characteristics (50 ns).

Compliance and Certifications:

All listed substitute parts maintain ROHS3 compliance and Moisture Sensitivity Level 1 (Unlimited). All parts are classified under ECCN EAR99 and HTSUS 8541.10.0080. REACH status is either Unaffected or not specified, indicating no regulatory restrictions on substitution.

Frequently Asked Questions (FAQ)

Q: Can S1D-E3/5AT replace S1D-M3/5AT directly?

A: Yes. S1D-E3/5AT is electrically identical to S1D-M3/5AT with matching voltage, current, forward voltage, and reverse recovery characteristics. The only difference is packaging format: S1D-E3/5AT is supplied in Cut Tape & Digi-Reel format while S1D-M3/5AT is supplied in Tape & Reel format. Verify that your assembly equipment accommodates the packaging format before substitution.

Q: What is the difference between S1DHE3_A/H and S1DHE3_A/I?

A: Both parts are automotive-grade variants with AEC-Q101 qualification and identical electrical specifications. The difference lies in packaging format or tape configuration. Consult the detailed part specifications for packaging details specific to your assembly process.

Q: Can I use ES1D-13-F instead of S1D-M3/5AT?

A: Yes, with design considerations. ES1D-13-F meets all critical electrical requirements (200 V, 1 A, DO-214AC package). However, it features significantly faster recovery time (25 ns versus 1.8 µs) and lower forward voltage (920 mV versus 1.1 V). These improvements may affect circuit behavior in applications sensitive to switching transients or voltage drop characteristics. Verify circuit compatibility before substitution.

Q: Why is EGF1D marked "Not For New Designs"?

A: EGF1D carries obsolescence status from onsemi, indicating the manufacturer no longer recommends this part for new applications. While the part may still be available in inventory, long-term supply cannot be guaranteed. Use alternative Active status parts for new designs.

Q: What is the advantage of STTH102A over S1D-M3/5AT?

A: STTH102A offers three performance advantages: (1) significantly faster recovery time (20 ns versus 1.8 µs), reducing switching losses; (2) lower forward voltage (970 mV versus 1.1 V), reducing conduction losses; (3) extended maximum junction temperature (175°C versus 150°C), allowing operation in higher ambient temperature environments. These characteristics make STTH102A suitable for high-frequency switching applications and thermal-constrained designs.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance status, ensuring compatibility with RoHS3 regulated applications and supply chains.

Q: Can I mix packaging formats in the same assembly?

A: Packaging format selection (Tape & Reel, Cut Tape & Digi-Reel) depends on your assembly equipment and process requirements. Do not mix formats within a single production run unless your equipment is configured to handle multiple tape formats. Verify equipment compatibility with your assembly partner before substitution.

Q: What does "Standard Recovery >500ns" mean compared to "Fast Recovery ≤500ns"?

A: Recovery speed classification indicates how quickly the diode transitions from conducting to blocking state when reverse voltage is applied. Standard Recovery (>500ns) diodes are suitable for low-frequency rectification applications. Fast Recovery (≤500ns) diodes are required for high-frequency switching applications where slower recovery would cause excessive switching losses and heat generation. Select recovery speed based on your circuit's operating frequency.

Q: Is CS1D-E3/I suitable for new designs?

A: No. CS1D-E3/I is marked Obsolete status. While the part may be available in current inventory (2191 pcs), manufacturer support and long-term availability cannot be guaranteed. Use Active status alternatives such as S1D-E3/5AT or S1D-E3/61T for new designs.

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