S1DL RVG General Purpose Rectifier Diode Equivalent & Substitute Parts

Part Overview

The S1DL RVG is an active general purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount Sub SMA package (DO-219AB). This component is designed for standard recovery applications with a reverse recovery time of 1.8 µs. The part is ROHS3 compliant and carries unlimited moisture sensitivity level (MSL 1), making it suitable for industrial and commercial applications. Substitute parts are identified based on matching or exceeding the electrical and mechanical specifications within the same package category.

Substiute Parts

S1DL RVG

Taiwan Semiconductor CorporationIn Stock: 1215S1DL RVG Datasheet

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VS-1EFH02-M3/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 50123VS-1EFH02-M3/I Datasheet

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VS-2EFH02HM3/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 20115VS-2EFH02HM3/I Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the S1DL RVG are qualified based on the following critical parameters:

Mandatory Matching Criteria:

• Voltage - DC Reverse (Vr) (Max): 200 V minimum
• Package / Case: DO-219AB (Sub SMA equivalent)
• Mounting Type: Surface Mount
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)

Allowable Variation Criteria:

• Current - Average Rectified (Io): Equal to or greater than 1 A
• Voltage - Forward (Vf) (Max): Equal to or lower than 1.1 V at rated current
• Reverse Recovery Time (trr): Standard or faster recovery characteristics
• Current - Reverse Leakage @ Vr: Equal to or lower than 5 µA at 200 V
• Operating Temperature - Junction: Range must encompass or exceed -55°C to 175°C

The identified substitute parts meet these criteria and are classified as direct functional equivalents within the general purpose rectifier diode category.

Parameter Comparison

Engineering Selection Recommendations

VS-1EFH02-M3/I Selection Criteria:

The VS-1EFH02-M3/I is a direct 1:1 current-rated substitute for the S1DL RVG. Both parts are rated for 1 A average rectified current at 200 V reverse voltage in identical DO-219AB packages. The VS-1EFH02-M3/I demonstrates superior electrical performance with lower forward voltage drop (930 mV versus 1.1 V) and significantly faster reverse recovery time (16 ns versus 1.8 µs), indicating fast recovery technology. Reverse leakage current is lower at 2 µA. The part is ROHS3 compliant with MSL 1 rating and active product status. Operating temperature range extends to -65°C, providing wider low-temperature capability than the main part.

VS-2EFH02HM3/I Selection Criteria:

The VS-2EFH02HM3/I is a higher current-rated substitute rated for 2 A average rectified current, providing 100% current margin over the S1DL RVG specification. This part maintains the same 200 V reverse voltage rating and DO-219AB package footprint. Forward voltage drop is 950 mV at 2 A, and reverse recovery time is 25 ns. Reverse leakage current is 2 µA. The part carries AEC-Q101 automotive qualification and is ROHS3 compliant with MSL 1 rating. Operating temperature range extends to -65°C. This part is suitable for applications requiring higher current capacity or automotive-grade reliability.

Both substitute parts are active products with full compliance certifications and unlimited moisture sensitivity levels, ensuring long-term availability and manufacturing consistency.

Frequently Asked Questions (FAQ)

Q: Can the VS-1EFH02-M3/I directly replace the S1DL RVG in existing designs?

A: Yes. Both parts share identical voltage ratings (200 V), current ratings (1 A), and package specifications (DO-219AB surface mount). The VS-1EFH02-M3/I offers improved electrical performance with lower forward voltage and faster recovery characteristics. No circuit modifications are required for direct substitution.

Q: What is the primary difference between VS-1EFH02-M3/I and VS-2EFH02HM3/I?

A: The primary difference is current rating. VS-1EFH02-M3/I is rated for 1 A, matching the S1DL RVG specification. VS-2EFH02HM3/I is rated for 2 A, providing double the current capacity. Both maintain 200 V reverse voltage rating and DO-219AB packaging. The VS-2EFH02HM3/I includes AEC-Q101 automotive qualification.

Q: Are all three parts compatible with the same PCB footprint?

A: Yes. All three parts use the DO-219AB (Sub SMA) package and surface mount mounting type, ensuring identical PCB footprint compatibility. No layout modifications are necessary when substituting between these parts.

Q: What does the faster reverse recovery time in the Vishay parts indicate?

A: The Vishay parts (VS-1EFH02-M3/I at 16 ns and VS-2EFH02HM3/I at 25 ns) employ fast recovery technology, compared to the S1DL RVG standard recovery at 1.8 µs. Faster recovery reduces switching losses and improves efficiency in high-frequency applications, though both technologies are suitable for general purpose rectification.

Q: Are there temperature range differences between these parts?

A: The S1DL RVG operates from -55°C to 175°C junction temperature. Both Vishay substitutes extend the lower temperature limit to -65°C, providing 10°C additional cold-temperature capability. Upper temperature limits are identical at 175°C.

Q: Do all parts meet the same compliance standards?

A: Yes. All three parts are ROHS3 compliant, carry MSL 1 (unlimited) moisture sensitivity level, and are REACH unaffected. The VS-2EFH02HM3/I additionally carries AEC-Q101 automotive qualification, suitable for automotive applications.

Q: What is the significance of the lower reverse leakage current in the Vishay parts?

A: The Vishay parts specify 2 µA reverse leakage at 200 V, compared to 5 µA for the S1DL RVG. Lower leakage current reduces standby power consumption and improves circuit performance in applications sensitive to leakage, such as precision analog circuits or low-power designs.

Q: Can the VS-2EFH02HM3/I be used in applications designed for 1 A operation?

A: Yes. The VS-2EFH02HM3/I is rated for 2 A operation, so it operates safely at 1 A with additional current margin. This provides design flexibility and potential thermal benefits due to lower power dissipation at reduced current levels.