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S1DL MHG General Purpose Rectifier Diode Equivalent & Substitute Parts
Part Overview
The S1DL MHG is an active general purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 1 A average rectified current in a surface mount Sub SMA package (DO-219AB). This component is designed for standard recovery applications with a reverse recovery time of 1.8 µs and forward voltage of 1.1 V at 1 A. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is currently in active production with 876 pieces in stock. Equivalent and substitute parts are identified based on matching electrical ratings, package compatibility, and operational specifications to support component procurement flexibility and supply chain continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 | V @ 1 A |
| Reverse Recovery Time (trr) | 1.8 | µs |
| Current - Reverse Leakage @ Vr | 5 | µA @ 200 V |
| Capacitance @ Vr, F | 9 | pF @ 4V, 1MHz |
| Package / Case | DO-219AB | Sub SMA |
| Operating Temperature - Junction | -55 to 175 | °C |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 | Unlimited |
Substitute Part Grouping Explanation
Substitute parts for the S1DL MHG are classified into two categories based on electrical and mechanical compatibility:
Parametric Equivalent (Same Electrical Ratings & Package): The S1DL RVG is a parametric equivalent manufactured by Taiwan Semiconductor Corporation with identical electrical specifications: 200 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, 1.8 µs reverse recovery time, and DO-219AB package. The primary difference is packaging format (Tape & Reel versus bulk), making it suitable for direct substitution in production environments.
Similar Manufacturer Parts (Compatible Voltage & Package, Different Current or Recovery Characteristics): The VS-1EFH02-M3/I and VS-2EFH02HM3/I from Vishay General Semiconductor - Diodes Division share the same 200 V reverse voltage rating and DO-219AB package but differ in current rating and recovery characteristics. The VS-1EFH02-M3/I maintains 1 A current rating with faster recovery (16 ns trr) and lower forward voltage (930 mV @ 1 A). The VS-2EFH02HM3/I is rated for 2 A current with 25 ns reverse recovery time and includes automotive qualification (AEC-Q101).
Key Parameters Determining Substitution:
- Voltage - DC Reverse (Vr) (Max): 200 V (all parts)
- Package / Case: DO-219AB (all parts)
- Mounting Type: Surface Mount (all parts)
- RoHS Status: ROHS3 Compliant (all parts)
- Moisture Sensitivity Level: 1 (all parts)
Parameter Comparison
| Parameter | S1DL MHG | S1DL RVG | VS-1EFH02-M3/I | VS-2EFH02HM3/I |
|---|---|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) | 1 A | 1 A | 1 A | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A | 1.1 V @ 1 A | 930 mV @ 1 A | 950 mV @ 2 A |
| Reverse Recovery Time (trr) | 1.8 µs | 1.8 µs | 16 ns | 25 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V | 5 µA @ 200 V | 2 µA @ 200 V | 2 µA @ 200 V |
| Package / Case | DO-219AB | DO-219AB | DO-219AB | DO-219AB |
| Operating Temperature - Junction | -55 to 175 °C | -55 to 175 °C | -65 to 175 °C | -65 to 175 °C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Active | Active | Active | Active |
Engineering Selection Recommendations
S1DL RVG is the direct parametric equivalent for the S1DL MHG. Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications and operating temperature range. Selection between these two is determined by packaging requirements: S1DL MHG for bulk packaging and S1DL RVG for Tape & Reel format. Both are ROHS3 compliant with MSL 1 rating and active product status.
VS-1EFH02-M3/I is a compatible substitute when lower forward voltage and faster recovery characteristics are acceptable. This Vishay part maintains the 1 A current rating and 200 V voltage rating with superior performance metrics: 930 mV forward voltage (versus 1.1 V), 16 ns reverse recovery time (versus 1.8 µs), and lower reverse leakage (2 µA versus 5 µA). Operating temperature range extends to -65°C. ROHS3 compliance and MSL 1 rating are maintained. This part is suitable for applications where reduced power dissipation and faster switching are beneficial.
VS-2EFH02HM3/I is a compatible substitute for applications requiring higher current capacity. This part is rated for 2 A average rectified current while maintaining 200 V reverse voltage and DO-219AB package compatibility. It includes automotive qualification (AEC-Q101) and extended operating temperature range (-65 to 175°C). Forward voltage is 950 mV at 2 A with 25 ns reverse recovery time. ROHS3 compliance and MSL 1 rating are maintained. This part is suitable for higher current applications or automotive-grade requirements.
All substitute parts maintain ROHS3 compliance, MSL 1 rating, and active product status. Selection is based on specific application requirements for current capacity, recovery speed, and forward voltage characteristics.
Frequently Asked Questions (FAQ)
Q: Can S1DL RVG be used as a direct replacement for S1DL MHG?
A: Yes. The S1DL RVG is a parametric equivalent with identical electrical specifications: 200 V reverse voltage, 1 A current rating, 1.1 V forward voltage at 1 A, 1.8 µs reverse recovery time, and DO-219AB package. The difference is packaging format (Tape & Reel versus bulk). Both are manufactured by Taiwan Semiconductor Corporation with identical operating temperature range (-55 to 175°C) and compliance certifications.
Q: What are the key differences between S1DL MHG and VS-1EFH02-M3/I?
A: Both parts share 200 V reverse voltage, 1 A current rating, and DO-219AB package. The VS-1EFH02-M3/I offers improved performance: lower forward voltage (930 mV versus 1.1 V at 1 A), faster recovery (16 ns versus 1.8 µs), and lower reverse leakage (2 µA versus 5 µA at 200 V). Operating temperature range extends to -65°C. The VS-1EFH02-M3/I is manufactured by Vishay and is suitable for applications where reduced power dissipation and faster switching are required.
Q: When should VS-2EFH02HM3/I be selected instead of S1DL MHG?
A: The VS-2EFH02HM3/I is selected for applications requiring 2 A average rectified current capacity while maintaining 200 V reverse voltage. This part includes automotive qualification (AEC-Q101) and is suitable for automotive-grade applications. The higher current rating accommodates higher load requirements. All other compliance certifications (ROHS3, MSL 1) and package format (DO-219AB) remain compatible.
Q: Are all substitute parts compatible with the DO-219AB package footprint?
A: Yes. All listed substitute parts use the DO-219AB package (Sub SMA format). They are mechanically and electrically compatible with the same PCB footprint and mounting process as the S1DL MHG.
Q: Do all substitute parts meet the same compliance requirements as S1DL MHG?
A: Yes. All substitute parts are ROHS3 compliant, have MSL 1 (Unlimited) rating, and REACH Unaffected status. All parts are in active production status. The VS-2EFH02HM3/I includes additional automotive qualification (AEC-Q101).
Q: What is the impact of reverse recovery time differences on circuit performance?
A: The S1DL MHG and S1DL RVG have 1.8 µs reverse recovery time (standard recovery). The VS-1EFH02-M3/I and VS-2EFH02HM3/I have significantly faster recovery times (16 ns and 25 ns respectively, fast recovery). Faster recovery reduces switching losses and improves efficiency in high-frequency applications. Standard recovery parts are suitable for lower frequency applications where recovery speed is not critical.
Q: Can forward voltage differences affect circuit design?
A: Yes. The S1DL MHG has 1.1 V forward voltage at 1 A, while VS-1EFH02-M3/I has 930 mV at 1 A. Lower forward voltage reduces power dissipation and heat generation. In circuits where voltage drop is critical, the lower forward voltage of the Vishay part provides improved efficiency. Circuit design must account for these differences in voltage regulation and power budget calculations.
Q: What inventory considerations apply to these substitute parts?
A: S1DL MHG has 876 pieces in stock, S1DL RVG has 1111 pieces, VS-1EFH02-M3/I has 50070 pieces, and VS-2EFH02HM3/I has 20100 pieces in stock. Higher inventory availability for Vishay parts may support longer-term supply chain continuity.
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