S1BL RVG Equivalent & Substitute Parts

Part Overview

The S1BL RVG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package (DO-219AB). This component is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the specified parameter set. The S1BL RVG serves as a reference baseline for identifying functionally compatible alternatives within the same package family and voltage/current rating class.

Substiute Parts

S1BL RVG

Taiwan Semiconductor CorporationIn Stock: 1208S1BL RVG Datasheet

Current PartRFQ

S1BL

Taiwan Semiconductor CorporationIn Stock: 15271S1BL Datasheet

Parametric EquivalentRFQ

VS-2EFH01HM3/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 10936VS-2EFH01HM3/I Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the S1BL RVG are identified based on the following critical parameters that determine functional compatibility:

Electrical Compatibility Criteria:

• Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
• Current - Average Rectified (Io): Must equal or exceed 1 A
• Package / Case: Must be DO-219AB (Sub SMA)
• Mounting Type: Must be Surface Mount

Compliance & Environmental Criteria:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Operating Temperature Range: Must accommodate -55°C to 175°C junction temperature

Identified Substitute Parts:

1. S1BL (Taiwan Semiconductor Corporation) — Parametric equivalent with identical electrical specifications and package. Product status is Not For New Designs.

2. VS-2EFH01HM3/I (Vishay General Semiconductor - Diodes Division) — Similar manufacturer part with higher current rating (2 A vs. 1 A), faster recovery time (16 ns vs. 1.8 µs), lower forward voltage (950 mV @ 2 A vs. 1.1 V @ 1 A), and automotive qualification (AEC-Q101). Product status is Active.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalent):

The S1BL part number from Taiwan Semiconductor Corporation provides identical electrical and mechanical specifications to the S1BL RVG. However, this part carries a "Not For New Designs" product status designation, indicating it is in mature or declining production phase. Selection of this substitute is appropriate only for legacy system maintenance or existing design continuity where no design changes are permissible.

For New Designs and Active Production:

The VS-2EFH01HM3/I from Vishay General Semiconductor - Diodes Division is classified as Active product status and carries AEC-Q101 automotive qualification. This part exceeds the electrical requirements of the S1BL RVG in the following aspects:

• Higher current rating (2 A vs. 1 A) provides design margin
• Significantly faster recovery time (16 ns vs. 1.8 µs) reduces switching losses
• Lower forward voltage drop (950 mV @ 2 A) improves efficiency
• Extended lower operating temperature limit (-65°C vs. -55°C)
• Lower reverse leakage current (2 µA vs. 5 µA)

All substitute parts maintain DO-219AB package compatibility, ROHS3 compliance, and MSL 1 rating. Selection between S1BL and VS-2EFH01HM3/I depends on design phase (legacy vs. new) and performance requirements (standard vs. fast recovery).

Frequently Asked Questions (FAQ)

Q: Can the VS-2EFH01HM3/I be used as a direct replacement for the S1BL RVG in existing designs?

A: Yes. The VS-2EFH01HM3/I meets or exceeds all critical electrical parameters (100 V reverse voltage, 1 A minimum current rating) and shares the DO-219AB package footprint. The higher current rating (2 A) and faster recovery characteristics (16 ns) provide performance enhancement without compatibility issues. All compliance certifications (ROHS3, MSL 1) are equivalent.

Q: What is the difference between the S1BL and S1BL RVG part numbers?

A: Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications and DO-219AB packaging. The primary distinction is product status: S1BL RVG is Active, while S1BL is Not For New Designs. This status difference reflects production lifecycle phase rather than technical performance.

Q: Are there package compatibility concerns when substituting these diodes?

A: No. All identified substitute parts use the DO-219AB (Sub SMA) surface mount package. PCB footprints, solder pad layouts, and mounting procedures are identical across all three parts. No board redesign or assembly process modification is required.

Q: How do the recovery time specifications affect circuit performance?

A: The S1BL RVG and S1BL both specify 1.8 µs reverse recovery time (standard recovery classification). The VS-2EFH01HM3/I specifies 16 ns (fast recovery classification). In high-frequency switching applications, the faster recovery time of the VS-2EFH01HM3/I reduces reverse recovery losses and electromagnetic interference. In low-frequency or linear applications, this difference has negligible impact on circuit operation.

Q: What compliance certifications apply to all substitute parts?

A: All three parts (S1BL RVG, S1BL, and VS-2EFH01HM3/I) are ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited moisture sensitivity level). The VS-2EFH01HM3/I additionally carries AEC-Q101 automotive qualification, which is not specified for the Taiwan Semiconductor parts.

Q: Is the lower reverse leakage current of the VS-2EFH01HM3/I (2 µA vs. 5 µA) significant?

A: Lower reverse leakage current reduces standby power consumption and heat generation in blocking mode. For most general-purpose rectification applications, both specifications are acceptable. In high-temperature or low-power applications, the 2 µA specification of the VS-2EFH01HM3/I provides marginal advantage.