S1B Equivalent & Substitute Parts

Part Overview

The S1B is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This diode operates across a junction temperature range of -55°C to 175°C and complies with ROHS3 standards. The part is currently active in production with 1030 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for specific assembly processes, or when design requirements necessitate different electrical characteristics such as recovery speed or forward voltage specifications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) Maximum	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) Maximum @ If	1.1	V @ 1 A
Reverse Recovery Time (trr)	1.5	µs
Current - Reverse Leakage @ Vr	1	µA @ 100 V
Capacitance @ Vr, F	12	pF @ 4V, 1MHz
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction	-55 to 175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the S1B are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents maintain identical electrical specifications (100 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage @ 1 A, 1.5 µs reverse recovery time) and the same DO-214AC (SMA) package. These parts differ only in packaging format (Tape & Reel versus Cut Tape) or product status. Parametric equivalents include S1B R3G and S1BH.

Similar Parts share the same voltage and current ratings (100 V, 1 A) and package family (DO-214AC/SMA) but exhibit variations in one or more of the following parameters: forward voltage (Vf), reverse recovery time (trr), reverse leakage current, capacitance, or operating temperature range. These variations result from different semiconductor technologies (Standard Recovery versus Fast Recovery) or manufacturer design choices. Similar parts include ES1B-13-F, ES1B-LTP, GS1B-LTP, RS1B-13-F, S1B-13-F, S1BB-13-F, US1B-13-F, and US1B-TP.

Substitution eligibility is determined by matching the critical parameters: reverse voltage rating, average rectified current, package type, and mounting method. Forward voltage, recovery time, and leakage current variations are acceptable when the application circuit design accommodates these differences.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	trr [µs/ns]	Ir @ 100V [µA]	Package	Product Status
S1B	Taiwan Semiconductor	100	1	1.1	1.5 µs	1	DO-214AC (SMA)	Active
S1B R3G	Taiwan Semiconductor	100	1	1.1	1.5 µs	1	DO-214AC (SMA)	Discontinued at DiGi Electronics
S1BH	Taiwan Semiconductor	100	1	1.1	1.5 µs	1	DO-214AC (SMA)	Active (AEC-Q101)
ES1B-13-F	Diodes Incorporated	100	1	0.92	25 ns	5	DO-214AC (SMA)	Active
ES1B-LTP	Micro Commercial Co	100	1	0.95	35 ns	5	DO-214AC (SMA)	Not For New Designs
GS1B-LTP	Micro Commercial Co	100	1	1.0	>500 ns	10	DO-214AC (SMA)	Not For New Designs
RS1B-13-F	Diodes Incorporated	100	1	1.3	150 ns	5	DO-214AC (SMA)	Active
S1B-13-F	Diodes Incorporated	100	1	1.1	3 µs	5	DO-214AC (SMA)	Active
S1BB-13-F	Diodes Incorporated	100	1	1.1	3 µs	5	DO-214AA (SMB)	Active
US1B-13-F	Diodes Incorporated	100	1	1.0	50 ns	5	DO-214AC (SMA)	Active
US1B-TP	Micro Commercial Co	100	1	1.0	50 ns	10	DO-214AC (SMA)	Not For New Designs

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalents):

S1BH is the recommended parametric equivalent when the S1B becomes unavailable. S1BH maintains identical electrical specifications and is qualified to AEC-Q101 automotive standards, providing enhanced reliability for applications requiring automotive-grade components. S1BH is currently active with 45,912 units in stock.

S1B R3G is a parametric equivalent but is discontinued at DiGi Electronics and should not be selected for new designs or long-term supply requirements.

For Active Production with Acceptable Variations:

S1B-13-F (Diodes Incorporated) is an active part with identical forward voltage (1.1 V @ 1 A) and standard recovery characteristics. This part is suitable for applications where the slightly longer reverse recovery time (3 µs versus 1.5 µs) does not impact circuit performance.

US1B-13-F (Diodes Incorporated) is an active part with fast recovery characteristics (50 ns) and lower forward voltage (1.0 V @ 1 A). This part is suitable for high-frequency switching applications where reduced recovery time improves efficiency.

ES1B-13-F (Diodes Incorporated) offers the fastest recovery time (25 ns) and lowest forward voltage (0.92 V @ 1 A) among active alternatives, making it optimal for high-frequency rectification circuits.

For Packaging Alternatives:

S1BB-13-F provides the same electrical characteristics as S1B-13-F but in a larger DO-214AA (SMB) package. This part is suitable when board space permits and larger thermal dissipation capability is beneficial.

Parts to Avoid for New Designs:

ES1B-LTP, GS1B-LTP, and US1B-TP are marked "Not For New Designs" and should be used only for legacy system maintenance or repair applications.

Frequently Asked Questions (FAQ)

Q: Can S1BH be used as a direct replacement for S1B?

A: Yes. S1BH is a parametric equivalent with identical electrical specifications (100 V, 1 A, 1.1 V forward voltage, 1.5 µs recovery time) and the same DO-214AC (SMA) package. S1BH is currently active and AEC-Q101 qualified.

Q: What is the difference between S1B-13-F and US1B-13-F?

A: Both parts are rated 100 V, 1 A in DO-214AC (SMA) packages and are currently active. US1B-13-F has a faster recovery time (50 ns versus 3 µs) and lower forward voltage (1.0 V versus 1.1 V). US1B-13-F is preferred for high-frequency applications; S1B-13-F is suitable for standard rectification.

Q: Why does ES1B-13-F have different electrical characteristics?

A: ES1B-13-F uses fast recovery technology, resulting in a 25 ns recovery time compared to the S1B's 1.5 µs standard recovery time. This technology also produces lower forward voltage (0.92 V) and higher reverse leakage (5 µA). Fast recovery diodes are optimized for switching applications.

Q: Can S1BB-13-F replace S1B in all applications?

A: S1BB-13-F has identical electrical characteristics but uses a larger DO-214AA (SMB) package instead of DO-214AC (SMA). It is electrically compatible but requires different PCB footprint and assembly process. Use only when the larger package is acceptable.

Q: Is S1B R3G still available?

A: S1B R3G is discontinued at DiGi Electronics and should not be selected for new designs. Use S1BH or S1B-13-F as alternatives.

Q: What does "Not For New Designs" mean?

A: Parts marked "Not For New Designs" (ES1B-LTP, GS1B-LTP, US1B-TP) are legacy products no longer recommended for new circuit designs. These parts may be used for maintenance of existing systems but should not be specified for new projects due to potential future unavailability.

Q: How do I choose between fast recovery and standard recovery diodes?

A: Fast recovery diodes (ES1B-13-F, US1B-13-F) are required for high-frequency switching circuits where reduced recovery time minimizes switching losses. Standard recovery diodes (S1B, S1B-13-F, GS1B-LTP) are suitable for low-frequency rectification and general-purpose applications. Verify circuit design requirements before selecting.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All parts listed in this reference are ROHS3 compliant and REACH unaffected, meeting environmental regulatory requirements.

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