Equivalent & Substitute Parts for RZR040P01TL

Part Overview

The Rohm Semiconductor RZR040P01TL is a P-Channel MOSFET with a 12V drain-to-source voltage rating and a continuous drain current capability of 4A. It features a maximum Rds(on) of 30mOhm at 4.5V gate-to-source voltage and is supplied in a surface-mount TSMT3 package (SC-96). This device is marked as “Not For New Designs,” which makes it necessary to identify alternative models with matching or comparable performance and compliance characteristics for ongoing or new applications.

Key Parameters

Manufacturer Part Number	Manufacturer	Category	FET Type	Technology	Drain to Source Voltage (Vdss)	Continuous Drain Current (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	MSL	REACH Status	ECCN	HTSUS	Product Status
RZR040P01TL	Rohm Semiconductor	Transistors, FETs, MOSFETs	P-Channel	MOSFET (Metal Oxide)	12 V	4A (Ta)	1.5V, 4.5V	30mOhm @ 4A, 4.5V	1V @ 1mA	30 nC @ 4.5V	±10V	2350 pF @ 6V	1W (Ta)	150°C (TJ)	Surface Mount	TSMT3	SC-96	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99	8541.29.0095	Not For New Designs

Substitute Part Grouping Explanation

Substitute parts for P-Channel MOSFETs in this category are grouped strictly by matching or exceeding the following key electrical and mechanical parameters as explicitly provided:

FET Type
Technology
Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Gate Charge (Qg) (Max)
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max)
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package / Package / Case
RoHS, MSL, and REACH compliance statuses Only parts meeting or exceeding these parameters in every required aspect, based on provided data, are included in the equivalent and substitute group.

Parameter Comparison

Parameter	RZR040P01TL (Rohm Semiconductor)	IRLML6401TRPBF (Infineon Technologies)	SI2333DDS-T1-GE3 (Vishay Siliconix)
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	P-Channel	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V	12 V	12 V
Continuous Drain Current (Id) @ 25°C	4A (Ta)	4.3A (Ta)	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V	1.8V, 4.5V	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 4A, 4.5V	50mOhm @ 4.3A, 4.5V	28mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA	950mV @ 250µA	1V @ 250µA
Gate Charge (Qg) (Max)	30 nC @ 4.5 V	15 nC @ 5 V	35 nC @ 8 V
Vgs (Max)	±10V	±8V	±8V
Input Capacitance (Ciss) (Max)	2350 pF @ 6 V	830 pF @ 10 V	1275 pF @ 6 V
Power Dissipation (Max)	1W (Ta)	1.3W (Ta)	1.2W (Ta), 1.7W (Tc)
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	TSMT3	Micro3™/SOT-23	SOT-23-3 (TO-236)
Package / Case	SC-96	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095	8541.29.0095
Product Status	Not For New Designs	Active	Active

Engineering Selection Recommendations

Selection of substitute P-Channel MOSFETs for RZR040P01TL is based solely on matching or exceeding the provided electrical performance parameters, surface mount compatibility, and compliance with RoHS and REACH requirements. Substitute parts listed possess equivalent or greater environmental certifications (RoHS3 Compliant, REACH Unaffected, and MSL 1), are in active production status, and have matching ECCN and HTSUS classifications.

Frequently Asked Questions (FAQ)

Q: What criteria determine if a MOSFET is a valid substitute for RZR040P01TL?
A: Valid substitutes must match or exceed key parameters including FET type, technology, drain-source voltage rating, current capability, Rds(on), drive and gate thresholds, maximum Vgs, input capacitance, power dissipation, and mechanical mounting/package compatibility. All compliance and certification parameters must also align.

Q: Are different package types interchangeable?
A: Only packages that are provided as comparably surface mount and fall within the specified supplier device package or mechanical dimensions from the input can be considered.

Q: Do the proposed substitutes meet the same compliance standards as RZR040P01TL?
A: All listed substitutes are RoHS3 Compliant, REACH Unaffected, and have an MSL of 1 (Unlimited).

Q: Why is it necessary to select an alternative for RZR040P01TL?
A: RZR040P01TL has a product status of “Not For New Designs”, requiring transition to active, current production MOSFETs for ongoing component availability.

Q: Are there differences in continuous current or Rds(on) among substitutes?
A: Differences in continuous drain current and Rds(on) are explicitly shown in the parameter comparison table. Only parameters equal to or exceeding the main part are considered.

Q: Is there any difference in environmental and regulatory certification?
A: All listed parts share the same regulatory certifications and environmental compliance as the RZR040P01TL.

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