RTQ035P02TR Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor RTQ035P02TR is a P-Channel MOSFET in the Transistors, FETs, MOSFETs category. It features a Drain to Source Voltage (Vdss) of 20 V, Continuous Drain Current (Id) of 3.5A (Ta), Rds On (Max) of 65mOhm, and is packaged in a TSMT6 (SC-95) surface mount case. The device is currently marked as Not For New Designs, making the identification of equivalent and substitute models necessary for continued BOM support and procurement stability, as well as for maintaining design compliance and minimizing supply chain risks.

Key Parameters

Parameter	Value
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Rds On (Max) @ Id, Vgs	65mOhm @ 3.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 10 V
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSMT6 (SC-95)
Package / Case	SOT-23-6 Thin, TSOT-23-6
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the RTQ035P02TR are determined strictly by matching key electrical and mechanical parameters as outlined:

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V (equal to or exceeding original)
Continuous Drain Current (Id) @ 25°C: at least 3.5A (Ta)
Rds On (Max) @ Id, Vgs: less than or equal to 65mOhm @ 4.5V, or lower at equal/higher current
Drive Voltage: 2.5V and/or 4.5V supported
Gate Charge and Input Capacitance: within practical application range
Power Dissipation: at least 1.25W (Ta)
Package: SOT-23-6 Thin, TSOT-23-6, TSMT6, SuperSOT™-6, or compatible 6-lead surface mount formats
Compliance: ROHS3 Compliant, REACH Unaffected, MSL 1 (Unlimited)

Parameter Comparison

Manufacturer Part Number	Manufacturer	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	REACH Status	Moisture Sensitivity Level (MSL)
RTQ035P02TR	Rohm Semiconductor	P-Channel	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	65mOhm @ 3.5A, 4.5V	2.5V, 4.5V	2V @ 1mA	10.5 nC @ 4.5 V	±12V	1200 pF @ 10 V	1.25W (Ta)	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
AO6405	Alpha & Omega Semiconductor Inc.	P-Channel	MOSFET (Metal Oxide)	30 V	5A (Ta)	52mOhm @ 5A, 10V	4.5V, 10V	3V @ 250µA	18 nC @ 10 V	±20V	840 pF @ 15 V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
AO6409A	Alpha & Omega Semiconductor Inc.	P-Channel	MOSFET (Metal Oxide)	20 V	5.5A (Ta)	41mOhm @ 5.5A, 4.5V	1.8V, 4.5V	900mV @ 250µA	11 nC @ 4.5 V	±8V	905 pF @ 10 V	2.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
BSL211SPH6327XTSA1	Infineon Technologies	P-Channel	MOSFET (Metal Oxide)	20 V	4.7A (Ta)	67mOhm @ 4.7A, 4.5V	2.5V, 4.5V	1.2V @ 25µA	12.4 nC @ 10 V	±12V	654 pF @ 15 V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
DMP2033UVT-7	Diodes Incorporated	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	65mOhm @ 4.2A, 4.5V	1.8V, 4.5V	900mV @ 250µA	10.4 nC @ 4.5 V	±8V	845 pF @ 15 V	1.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
DMP2066LDM-7	Diodes Incorporated	P-Channel	MOSFET (Metal Oxide)	20 V	4.6A (Ta)	40mOhm @ 4.6A, 4.5V	2.5V, 4.5V	1.2V @ 250µA	10.1 nC @ 4.5 V	±12V	820 pF @ 15 V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
FDC602P	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	5.5A (Ta)	35mOhm @ 5.5A, 4.5V	2.5V, 4.5V	1.5V @ 250µA	20 nC @ 4.5 V	±12V	1456 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
FDC604P	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	5.5A (Ta)	33mOhm @ 5.5A, 4.5V	1.8V, 4.5V	1.5V @ 250µA	30 nC @ 4.5 V	±8V	1926 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
FDC634P	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	80mOhm @ 3.5A, 4.5V	2.5V, 4.5V	1.5V @ 250µA	10 nC @ 4.5 V	±8V	779 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
FDC638APZ	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	4.5A (Ta)	43mOhm @ 4.5A, 4.5V	2.5V, 4.5V	1.5V @ 250µA	12 nC @ 4.5 V	±12V	1000 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
FDC640P	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	4.5A (Ta)	53mOhm @ 4.5A, 4.5V	2.5V, 4.5V	1.5V @ 250µA	13 nC @ 4.5 V	±12V	890 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
FDC642P	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	4A (Ta)	65mOhm @ 4A, 4.5V	2.5V, 4.5V	1.5V @ 250µA	16 nC @ 4.5 V	±8V	925 pF @ 10 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
NTGS3136PT1G	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	33mOhm @ 5.1A, 4.5V	1.8V, 4.5V	1V @ 250µA	29 nC @ 4.5 V	±8V	1901 pF @ 10 V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
NTGS3443T1G	onsemi	P-Channel	MOSFET (Metal Oxide)	20 V	2.2A (Ta)	65mOhm @ 4.4A, 4.5V	2.5V, 4.5V	1.5V @ 250µA	15 nC @ 4.5 V	±12V	565 pF @ 5 V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
PMV50XPR	Nexperia USA Inc.	P-Channel	MOSFET (Metal Oxide)	20 V	3.6A (Ta)	60mOhm @ 3.6A, 4.5V	1.5V, 4.5V	900mV @ 250µA	12 nC @ 4.5 V	±12V	744 pF @ 20 V	490mW (Ta), 4.63W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
SI3433CDV-T1-GE3	Vishay Siliconix	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Tc)	38mOhm @ 5.2A, 4.5V	1.8V, 4.5V	1V @ 250µA	45 nC @ 8 V	±8V	1300 pF @ 10 V	1.6W (Ta), 3.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
SI3443CDV-T1-GE3	Vishay Siliconix	P-Channel	MOSFET (Metal Oxide)	20 V	5.97A (Tc)	60mOhm @ 4.7A, 4.5V	2.5V, 4.5V	1.5V @ 250µA	12.4 nC @ 5 V	±12V	610 pF @ 10 V	2W (Ta), 3.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)
SQ3469EV-T1_GE3	Vishay Siliconix	P-Channel	MOSFET (Metal Oxide)	20 V	8A (Tc)	36mOhm @ 6.7A, 10V	4.5V, 10V	2.5V @ 25µA	27 nC @ 10 V	±20V	1020 pF @ 10 V	5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6	ROHS3 Compliant	REACH Unaffected	1 (Unlimited)

Engineering Selection Recommendations

Only parts that are ROHS3 Compliant, REACH Unaffected, and have Moisture Sensitivity Level (MSL) 1 (Unlimited) should be considered as substitutes, aligned with the compliance and reliability requirements of contemporary electronic designs. The original RTQ035P02TR is marked as Not For New Designs; therefore, all ongoing or new designs should select from substitute models with an Active product status to ensure sustained availability and design longevity.

Frequently Asked Questions (FAQ)

Q1: What are the key parameters that must match to select a substitute for RTQ035P02TR?
A1: Substitution requires the same FET type (P-Channel), matching or higher Vdss (20 V or above), continuous drain current Id ≥ 3.5A (Ta), Rds On (Max) at 4.5V ≤ 65mOhm or lower, compatible drive voltage, power dissipation at least 1.25W (Ta), and surface mount packaging compatible with the original footprint.

Q2: Do package differences matter when selecting a substitute?
A2: Yes. The substitute should be in a SOT-23-6 Thin, TSOT-23-6, or fully footprint-compatible 6-lead surface mount package to ensure mechanical and PCB compatibility.

Q3: Is compliance with ROHS3 and REACH necessary for substitutes?
A3: Yes. Only substitutes with ROHS3 Compliant and REACH Unaffected status, and MSL 1 (Unlimited), align with the compliance requirements for most regulated markets and high-reliability applications.

Q4: Can a substitute have a lower Rds On (Max) or higher Id rating?
A4: Yes. Substitutes with a lower Rds On (Max) or a higher Id rating than the original are permitted, as these do not compromise the electrical performance criteria specified.

Q5: What should be considered if the original part's product status is Not For New Designs?
A5: Where the main part is Not For New Designs, select a substitute with Active product status to maintain supply chain and future design support.

Q6: Are all SOT-23-6/SuperSOT-6/TSMT6 packages interchangeable?
A6: Only those with identical pinout and compatible mechanical dimensions are considered compatible. Verify package details strictly against provided input parameters.

Q7: Is it necessary to match the exact Gate Charge (Qg) or Input Capacitance (Ciss)?
A7: Substitution is based on these parameters being within a practical range for functionality, as per provided input. Substitutes listed adhere to this notional equivalence.

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