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RT1A040ZPTR P-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The RT1A040ZPTR is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Rohm Semiconductor, designed for surface mount applications in 8-TSST packaging. This device operates at 12V drain-to-source voltage with a continuous drain current rating of 4A at 25°C and maximum power dissipation of 1.25W.
The RT1A040ZPTR carries a product status designation of "Not For New Designs," indicating that while the part remains available in inventory (912 pcs in stock), Rohm Semiconductor does not recommend its use in new circuit development. This status necessitates identification of functionally equivalent alternatives that meet the same electrical and mechanical specifications for ongoing production support and design flexibility.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 12 | V |
| Continuous Drain Current (Id) @ 25°C | 4 | A |
| On-State Resistance (Rds On Max) @ 4A, 4.5V | 30 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 1mA | 1 | V |
| Gate Charge (Qg Max) @ 4.5V | 30 | nC |
| Maximum Gate Voltage (Vgs Max) | ±10 | V |
| Input Capacitance (Ciss Max) @ 6V | 2350 | pF |
| Power Dissipation (Max) | 1.25 | W |
| Operating Temperature (Max) | 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | 8-SMD, Flat Lead | — |
| Supplier Device Package | 8-TSST | — |
| Packaging Format | Tape & Reel (TR) | — |
Substitute Part Grouping Explanation
Substitution of the RT1A040ZPTR is determined by strict equivalence across the following critical parameters:
Electrical Equivalence Criteria:
- FET Type: P-Channel configuration
- Technology: MOSFET (Metal Oxide) construction
- Drain to Source Voltage (Vdss): 12V minimum rating
- Continuous Drain Current (Id): 4A minimum at 25°C
- On-State Resistance (Rds On): 30 mOhm maximum at specified conditions
- Gate Threshold Voltage (Vgs(th)): 1V maximum at 1mA
- Gate Charge (Qg): 30 nC maximum at 4.5V
- Maximum Gate Voltage (Vgs): ±10V minimum range
- Input Capacitance (Ciss): 2350 pF maximum at 6V
- Power Dissipation: 1.25W maximum
Mechanical Equivalence Criteria:
- Mounting Type: Surface Mount only
- Package / Case: 8-SMD, Flat Lead configuration
- Supplier Device Package: 8-TSST
- Packaging Format: Tape & Reel (TR)
Compliance Equivalence Criteria:
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- REACH Status: REACH Unaffected
A substitute part must satisfy all electrical parameters at or above the specified ratings, maintain identical mechanical packaging and lead configuration, and comply with all regulatory and environmental standards listed above.
Parameter Comparison
| Parameter | RT1A040ZPTR (Main Part) | Equivalent Status |
|---|---|---|
| Manufacturer | Rohm Semiconductor | Reference |
| Part Number | RT1A040ZPTR | Primary |
| FET Type | P-Channel | Substitution Requirement |
| Technology | MOSFET (Metal Oxide) | Substitution Requirement |
| Vdss | 12V | Substitution Requirement |
| Id @ 25°C | 4A | Substitution Requirement |
| Rds On (Max) | 30 mOhm @ 4A, 4.5V | Substitution Requirement |
| Vgs(th) (Max) | 1V @ 1mA | Substitution Requirement |
| Qg (Max) | 30 nC @ 4.5V | Substitution Requirement |
| Vgs (Max) | ±10V | Substitution Requirement |
| Ciss (Max) | 2350 pF @ 6V | Substitution Requirement |
| Power Dissipation (Max) | 1.25W | Substitution Requirement |
| Operating Temperature (Max) | 150°C | Substitution Requirement |
| Package / Case | 8-SMD, Flat Lead | Substitution Requirement |
| Supplier Device Package | 8-TSST | Substitution Requirement |
| Packaging Format | Tape & Reel (TR) | Substitution Requirement |
| RoHS Status | ROHS3 Compliant | Substitution Requirement |
| MSL | 1 (Unlimited) | Substitution Requirement |
| REACH Status | REACH Unaffected | Substitution Requirement |
Engineering Selection Recommendations
The RT1A040ZPTR is designated "Not For New Designs" by Rohm Semiconductor. This status indicates that while the part is currently available in inventory, the manufacturer does not recommend its incorporation into new circuit designs. Existing designs utilizing this component remain supported through current inventory (912 pcs in stock).
For new design implementations, selection of a substitute P-Channel MOSFET must prioritize:
-
Electrical Parameter Matching: The substitute must meet or exceed all specified electrical ratings, including Vdss (12V), Id (4A), Rds On (30 mOhm), and all gate-related parameters (Vgs(th), Qg, Ciss).
-
Package Compatibility: The substitute must utilize identical 8-TSST surface mount packaging with 8-SMD flat lead configuration to ensure direct PCB layout compatibility without redesign.
-
Regulatory Compliance: The substitute must maintain ROHS3 compliance, MSL 1 rating, and REACH unaffected status to satisfy supply chain and environmental requirements.
-
Thermal Performance: The substitute must support the 1.25W maximum power dissipation and 150°C operating temperature to ensure thermal design compatibility.
Substitutes meeting all these criteria provide direct functional replacement without circuit modification or performance degradation.
Frequently Asked Questions (FAQ)
Q: What does "Not For New Designs" status mean for the RT1A040ZPTR?
A: This designation indicates that Rohm Semiconductor does not recommend using this part in new circuit development. The part remains available in current inventory and continues to be supported for existing designs. New designs should incorporate substitute parts that meet equivalent electrical and mechanical specifications.
Q: What are the critical parameters that determine if a part can substitute for the RT1A040ZPTR?
A: Substitution requires equivalence across three parameter categories: (1) Electrical—P-Channel MOSFET with 12V Vdss, 4A Id, 30 mOhm Rds On, 1V Vgs(th), 30 nC Qg, ±10V Vgs range, and 2350 pF Ciss; (2) Mechanical—8-TSST surface mount package with 8-SMD flat lead configuration; (3) Compliance—ROHS3, MSL 1, and REACH unaffected status.
Q: Can I use a substitute part with higher current rating than 4A?
A: Yes. A substitute with higher continuous drain current (Id) rating exceeds the minimum requirement and provides additional design margin. The substitute must maintain all other electrical parameters at or above specified values.
Q: Is the 8-TSST package interchangeable with other surface mount packages?
A: No. The 8-TSST package with 8-SMD flat lead configuration is specific to this device footprint. Substitutes must use identical packaging to ensure PCB layout compatibility without redesign. Different package types require circuit board modification.
Q: What is the significance of the 30 mOhm Rds On specification?
A: The on-state resistance (Rds On) of 30 mOhm at 4A and 4.5V gate voltage determines the voltage drop and power dissipation during conduction. Substitutes must meet this specification to maintain equivalent thermal performance and circuit efficiency. Lower Rds On values are acceptable and provide improved performance.
Q: Does the RT1A040ZPTR require special handling due to its MSL 1 rating?
A: MSL 1 (Moisture Sensitivity Level 1) indicates unlimited shelf life with no special moisture control requirements during storage or handling. Standard component handling procedures are sufficient.
Q: Are there any temperature derating considerations for the RT1A040ZPTR?
A: The maximum operating temperature is 150°C. Power dissipation and current ratings may require derating at elevated ambient temperatures depending on thermal design. Consult thermal management calculations for specific application conditions.
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