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RSFBL MHG Equivalent & Substitute Parts
Part Overview
The RSFBL MHG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 500 mA average rectified current. This fast recovery diode is designed for surface mount applications in the DO-219AB (Sub SMA) package. The part is active in production with RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts are identified to provide alternative sourcing options where inventory, lead time, or specific performance characteristics require component alternatives within the same electrical and mechanical specifications.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 500 mA |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 500 mA |
| Speed Classification | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Capacitance @ Vr, F | 4 pF @ 4 V, 1 MHz |
| Package / Case | DO-219AB |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the RSFBL MHG is determined by the following critical parameters:
Mandatory Matching Parameters:
- Voltage - DC Reverse (Vr) (Max): 100 V
- Package / Case: DO-219AB
- Mounting Type: Surface Mount
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
Allowable Variation Parameters:
- Current - Average Rectified (Io): Substitute parts may exceed 500 mA rating (upward compatible)
- Voltage - Forward (Vf) (Max) @ If: Substitute parts may have lower forward voltage drop
- Reverse Recovery Time (trr): Substitute parts may have faster recovery characteristics
- Current - Reverse Leakage @ Vr: Substitute parts may have lower leakage current
- Operating Temperature - Junction: Substitute parts may have extended temperature range
Three substitute parts meet the mandatory matching criteria: ES07B-GS08, ES07B-GS18, and VS-2EFH01HM3/I. All three are manufactured by Vishay General Semiconductor - Diodes Division, maintain 100 V reverse voltage rating, utilize DO-219AB packaging, and comply with RoHS3 and MSL 1 requirements.
Parameter Comparison
| Parameter | RSFBL MHG | ES07B-GS08 | ES07B-GS18 | VS-2EFH01HM3/I |
|---|---|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) | 500 mA | 500 mA | 1.2 A | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 500 mA | 980 mV @ 1 A | 980 mV @ 1 A | 950 mV @ 2 A |
| Speed Classification | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Reverse Recovery Time (trr) | 150 ns | 25 ns | 25 ns | 16 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V | 10 µA @ 100 V | 10 µA @ 100 V | 2 µA @ 100 V |
| Capacitance @ Vr, F | 4 pF @ 4 V, 1 MHz | 4 pF @ 4 V, 1 MHz | 4 pF @ 4 V, 1 MHz | Not specified |
| Package / Case | DO-219AB | DO-219AB | DO-219AB | DO-219AB |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 175°C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Qualification | Not specified | AEC-Q101 | Not specified | AEC-Q101 |
Engineering Selection Recommendations
ES07B-GS08 (Vishay General Semiconductor - Diodes Division)
This substitute maintains electrical parity with the RSFBL MHG at the 500 mA current rating while offering improved reverse recovery time (25 ns versus 150 ns). The part carries AEC-Q101 automotive qualification and operates across the same temperature range. This option is suitable for direct replacement in applications where the 500 mA specification is the design requirement.
ES07B-GS18 (Vishay General Semiconductor - Diodes Division)
This substitute provides upward current compatibility at 1.2 A average rectified current, maintaining the 100 V reverse voltage and DO-219AB package. The faster reverse recovery time (25 ns) and identical forward voltage characteristics support applications requiring higher current capacity within the same thermal and mechanical envelope. This option is appropriate for designs where current margin or future scaling is beneficial.
VS-2EFH01HM3/I (Vishay General Semiconductor - Diodes Division)
This substitute offers the highest current rating at 2 A with the fastest reverse recovery time (16 ns) and lowest reverse leakage current (2 µA). The part is qualified to AEC-Q101 and operates across an extended temperature range (-65°C ~ 175°C). This option is suitable for applications requiring superior switching performance and automotive-grade reliability.
All three substitutes maintain RoHS3 compliance, MSL 1 rating, and DO-219AB surface mount packaging. Selection between substitutes depends on application current requirements, switching speed demands, and temperature operating range specifications.
Frequently Asked Questions (FAQ)
Q: Can ES07B-GS08 be used as a direct replacement for RSFBL MHG?
A: Yes. ES07B-GS08 maintains the same 100 V reverse voltage, 500 mA current rating, DO-219AB package, and operating temperature range as RSFBL MHG. Both parts are RoHS3 compliant with MSL 1 rating. The substitute offers improved reverse recovery time (25 ns versus 150 ns).
Q: What is the difference between ES07B-GS18 and ES07B-GS08?
A: The primary difference is current rating. ES07B-GS18 is rated for 1.2 A average rectified current, while ES07B-GS08 is rated for 500 mA. Both maintain 100 V reverse voltage, identical forward voltage characteristics, and DO-219AB packaging. ES07B-GS18 is suitable for applications requiring higher current capacity.
Q: Is VS-2EFH01HM3/I compatible with RSFBL MHG in all applications?
A: VS-2EFH01HM3/I maintains the same 100 V reverse voltage and DO-219AB package as RSFBL MHG. However, it is rated for 2 A current and operates across an extended temperature range (-65°C ~ 175°C versus -55°C ~ 150°C). Compatibility depends on whether the application circuit can accommodate the higher current rating and whether the extended temperature range is required or irrelevant to the design.
Q: Do all substitute parts have the same package dimensions?
A: Yes. RSFBL MHG and all three substitute parts use DO-219AB (SMF) surface mount packaging. This ensures mechanical and thermal compatibility in PCB layouts and reflow processes.
Q: What is the significance of AEC-Q101 qualification on ES07B-GS08 and VS-2EFH01HM3/I?
A: AEC-Q101 is an automotive industry qualification standard. Parts carrying this qualification have undergone additional reliability testing and are approved for automotive applications. RSFBL MHG does not specify AEC-Q101 qualification. If automotive-grade reliability is required, ES07B-GS08 or VS-2EFH01HM3/I are appropriate selections.
Q: Can RSFBL MHG be replaced with a lower-current-rated diode?
A: No. Substitute parts must maintain or exceed the current rating of the original part. Downrating current capacity creates risk of thermal stress and component failure. All identified substitutes maintain or exceed the 500 mA specification.
Q: Are there differences in forward voltage drop between the substitutes?
A: Yes. RSFBL MHG specifies 1.3 V @ 500 mA forward voltage. ES07B-GS08 and ES07B-GS18 specify 980 mV @ 1 A, and VS-2EFH01HM3/I specifies 950 mV @ 2 A. Lower forward voltage reduces power dissipation and heat generation. Applications sensitive to forward voltage characteristics should evaluate this parameter against circuit requirements.
Q: What does reverse recovery time (trr) indicate?
A: Reverse recovery time is the interval required for a diode to transition from forward conduction to reverse blocking after the applied voltage reverses. Faster recovery time (lower trr value) reduces switching losses and improves efficiency in high-frequency applications. RSFBL MHG has 150 ns trr, while substitutes range from 16 ns to 25 ns, offering improved switching performance.
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