Request Quote
(Ships tomorrow)
RSD080N06TL Equivalent & Substitute Parts Reference
Part Overview
The Rohm Semiconductor RSD080N06TL is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), with a drain-to-source voltage of 60 V, a continuous drain current of 8A (Ta), and a maximum on-state resistance of 80mOhm at 8A, 10V gate drive. The device is capable of dissipating up to 15W (Tc) and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 case suitable for surface mount applications. The product is active, RoHS3 compliant, REACH unaffected, MSL 1 rated, and categorized under Transistors, FETs, MOSFETs.
Finding directly equivalent or substitute models is essential to assure uninterrupted production, design flexibility, or enhanced logistics resilience, especially as production lines require compatible and compliant alternatives without deviation from the original specification.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | RSD080N06TL |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) @ 25°C | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 10V |
| Power Dissipation (Max) | 15W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Compliance | RoHS3 Compliant, REACH Unaffected, MSL 1 |
Substitute Part Grouping Explanation
Substitute candidates for RSD080N06TL were selected based solely on alignment with critical electrical, thermal, mechanical, and regulatory parameters within the category of N-channel MOSFETs. Only parts matching or exceeding the following parameters were qualified as substitutes:
- FET type: N-Channel MOSFET (Metal Oxide)
- Package/case: TO-252-3, DPAK (2 Leads + Tab), SC-63 (surface mount compatibility)
- Drain-to-Source Voltage (Vdss): 60 V
- Equivalent or superior drain current, Rds(on), Vgs range, and gate charge
- Power dissipation at rated conditions
- Compliance status (RoHS, REACH, MSL)
The exact values for Vdss, Id, Rds(on), drive voltage, gate charge, input capacitance, power dissipation, and mounting type are compared side-by-side to facilitate selection.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Drain to Source Voltage (Vdss) | Continuous Drain Current (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status | REACH Status | MSL |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RSD080N06TL | Rohm Semiconductor | 60 V | 8A (Ta) | 80mOhm @ 8A, 10V | 4V, 10V | 2.5V @ 1mA | 9.4 nC @ 10V | ±20V | 380 pF @ 10V | 15W (Tc) | 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | RoHS3 | Unaffected | 1 |
| RD3L080SNTL1 | Rohm Semiconductor | 60 V | 8A (Ta) | 80mOhm @ 8A, 10V | 4V, 10V | 2.5V @ 1mA | 9.4 nC @ 10V | ±20V | 380 pF @ 10V | 15W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | RoHS3 | Unaffected | 1 |
| RD3L080SNFRATL | Rohm Semiconductor | 60 V | 8A (Ta) | 80mOhm @ 8A, 10V | 4V, 10V | 2.5V @ 1mA | 9.4 nC @ 10V | ±20V | 380 pF @ 10V | 15W (Tc) | 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | RoHS3 | Unaffected | 1 |
| DMN6068LK3-13 | Diodes Incorporated | 60 V | 6A (Ta) | 68mOhm @ 12A, 10V | 4.5V, 10V | 3V @ 250µA | 10.3 nC @ 10V | ±20V | 502 pF @ 30V | 2.12W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | RoHS3 | Unaffected | 1 |
| STD16NF06T4 | STMicroelectronics | 60 V | 16A (Tc) | 70mOhm @ 8A, 10V | 10V | 2V @ 250µA | 14.1 nC @ 10V | ±20V | 400 pF @ 15V | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | RoHS3 | Unaffected | 1 |
| IRFR024TRLPBF | Vishay Siliconix | 60 V | 14A (Tc) | 100mOhm @ 8.4A, 10V | 10V | 4V @ 250µA | 25 nC @ 10V | ±20V | 640 pF @ 25V | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | RoHS3 | – | 1 |
Engineering Selection Recommendations
All substitute MOSFETs in this list are active products, RoHS3 compliant, and rated MSL 1, which is compatible with typical lead-free manufacturing processes and unlimited floor life at ambient conditions. All are surface mount devices in the TO-252-3, DPAK (2 Leads + Tab), SC-63 form factor. Confirm the compliance status as specified: all listed substitutes meet RoHS3 requirements, and REACH status is either unaffected or not specified. All parts are available from authorized distributors in new original condition.
Frequently Asked Questions (FAQ)
Q: What determines whether a MOSFET is an acceptable substitute in this category?
A: An acceptable substitute must have the same or higher drain-to-source voltage, comparable or superior continuous drain current, equivalent or better Rds(on), compatible gate threshold voltage and drive voltage range, and identical or compatible package for surface mounting. Compliance certifications must also align with application requirements.
Q: Are all these substitutes mechanically compatible with the original RSD080N06TL footprint?
A: All listed substitutes use the TO-252-3/DPAK (2 Leads + Tab), SC-63 package and are surface mount compatible.
Q: Do these substitutes have the same environmental and moisture sensitivity rating?
A: All are rated MSL 1 and are RoHS3 compliant, with most listed as REACH unaffected.
Q: Can a substitute with higher current or power dissipation be used as a drop-in replacement?
A: Higher-rated substitutes are included only if all mandatory substitution parameters align; all parts retain compatibility within the mechanical and electrical constraints outlined.
Q: Are there differences in gate threshold voltage or gate charge to consider?
A: Parameter differences, such as gate threshold voltage and gate charge, are shown in the comparison table and should be reviewed according to application drive circuitry requirements based on the listed values.
Q: Do substitutes with slightly different input capacitance (Ciss) affect interchangeability?
A: Substitution is based on compliance with all primary electrical and mechanical parameters summarized in the key parameter and comparison tables. All listed parts provide compatible capacitance within the allowed range for this product category.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts





