RS3GHE3_A/I Equivalent & Substitute Parts

Part Overview

The RS3GHE3_A/I is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount device operates at 400 V DC reverse voltage with a 3 A average rectified current rating and is packaged in the DO-214AB (SMC) form factor. The device is classified as a fast recovery diode with a reverse recovery time of 150 ns and is qualified to AEC-Q101 automotive standards.

The RS3GHE3_A/I maintains active product status with 837 pieces currently in stock. Equivalent and substitute parts are identified based on matching electrical performance parameters and mechanical compatibility within the DO-214AB package family. Substitute parts enable procurement flexibility when primary inventory is unavailable or when alternative manufacturing sources are required for supply chain continuity.

Substiute Parts

RS3GHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 847RS3GHE3_A/I Datasheet
RS3GHE3_A/I
Current Part
RS3G-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 7906RS3G-E3/57T Datasheet
RS3G-E3/57T
Parametric Equivalent
RS3G-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 4472RS3G-E3/9AT Datasheet
RS3G-E3/9AT
Parametric Equivalent
ES3G V7G
Taiwan Semiconductor CorporationIn Stock: 6450ES3G V7G Datasheet
ES3G V7G
Parametric Equivalent
HS3G R7G
Taiwan Semiconductor CorporationIn Stock: 929HS3G R7G Datasheet
HS3G R7G
Parametric Equivalent
HS3G V7G
Taiwan Semiconductor CorporationIn Stock: 1978HS3G V7G Datasheet
HS3G V7G
Parametric Equivalent
UF3G_R1_00001
Panjit International Inc.In Stock: 1887UF3G_R1_00001 Datasheet
UF3G_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 2.5 A V
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 10 µA @ 400 V
Capacitance @ Vr, F 44 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC
Operating Temperature - Junction -55 to 150 °C
Technology Standard
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)

Substitute Part Grouping Explanation

Substitute parts for the RS3GHE3_A/I are qualified based on the following critical parameters that determine functional equivalence:

Electrical Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3 A
  • Package / Case: DO-214AB, SMC
  • Operating Temperature - Junction: -55°C to 150°C
  • Technology: Standard
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Substitute parts maintain identical or superior electrical ratings across these parameters. Variations in secondary characteristics such as reverse recovery time (trr), forward voltage (Vf), reverse leakage current, and junction capacitance are permitted within the fast recovery diode classification, as these parameters do not affect primary circuit function when the core ratings remain constant.

All substitute parts are packaged in DO-214AB (SMC) surface mount configuration, ensuring mechanical and thermal compatibility with existing PCB layouts and assembly processes.

Parameter Comparison

Parameter RS3GHE3_A/I RS3G-E3/57T RS3G-E3/9AT ES3G V7G HS3G R7G HS3G V7G UF3G_R1_00001
Manufacturer Vishay Vishay Vishay Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Panjit International
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 400 V 400 V 400 V 400 V
Current - Average Rectified (Io) 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 2.5 A 1.3 V @ 2.5 A 1.3 V @ 2.5 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A
Reverse Recovery Time (trr) 150 ns 150 ns 150 ns 35 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 400 V 10 µA @ 400 V 10 µA @ 400 V 10 µA @ 400 V 10 µA @ 400 V 10 µA @ 400 V 1 µA @ 400 V
Capacitance @ Vr, F 44 pF @ 4V, 1MHz 44 pF @ 4V, 1MHz 44 pF @ 4V, 1MHz 30 pF @ 4V, 1MHz 80 pF @ 4V, 1MHz 80 pF @ 4V, 1MHz 75 pF @ 4V, 1MHz
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Operating Temperature - Junction -55 to 150°C -55 to 150°C -55 to 150°C -55 to 150°C -55 to 150°C -55 to 150°C -55 to 150°C
Technology Standard Standard Standard Standard Standard Standard Standard
Speed Classification Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active Discontinued at DiGi Electronics Discontinued at DiGi Electronics Discontinued at DiGi Electronics Active
Inventory (Pcs) 837 7818 4399 6374 919 1920 1875

Engineering Selection Recommendations

Primary Substitutes (Vishay Devices):

RS3G-E3/57T and RS3G-E3/9AT are parametric equivalents manufactured by Vishay General Semiconductor - Diodes Division. Both devices maintain identical electrical specifications to the RS3GHE3_A/I, including 400 V reverse voltage, 3 A average rectified current, 150 ns reverse recovery time, and DO-214AB packaging. Both parts carry Active product status and ROHS3 compliance. RS3G-E3/57T offers the highest inventory availability at 7818 pieces, while RS3G-E3/9AT provides 4399 pieces in stock. These devices are recommended as first-choice substitutes due to manufacturer consistency and specification alignment.

Secondary Substitutes (Taiwan Semiconductor Corporation):

ES3G V7G and HS3G V7G are manufactured by Taiwan Semiconductor Corporation and meet the core electrical requirements of 400 V reverse voltage and 3 A current rating within the DO-214AB package. Both devices are classified as fast recovery diodes with operating temperature ranges of -55°C to 150°C and ROHS3 compliance. However, both parts are marked as Discontinued at DiGi Electronics, indicating limited long-term availability. ES3G V7G exhibits superior reverse recovery time performance at 35 ns compared to the primary part's 150 ns. HS3G R7G and HS3G V7G both feature 50 ns reverse recovery time. These devices are suitable for substitution when primary Vishay inventory is exhausted, provided supply chain continuity can be established through alternative distribution channels.

Alternative Substitute (Panjit International Inc.):

UF3G_R1_00001 is manufactured by Panjit International Inc. and provides equivalent electrical performance with 400 V reverse voltage, 3 A current rating, and DO-214AB packaging. This device maintains Active product status with 1875 pieces in inventory. The UF3G_R1_00001 demonstrates superior reverse leakage current performance at 1 µA compared to 10 µA in the primary part, and features 50 ns reverse recovery time. ROHS3 compliance and MSL 1 rating ensure environmental and moisture handling compatibility. This device is suitable for applications where supply diversification across multiple manufacturers is required.

Compliance and Certification:

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity classification, ensuring compatibility with standard PCB assembly and storage protocols. The primary part RS3GHE3_A/I carries AEC-Q101 automotive qualification; substitute parts do not explicitly list this qualification in the provided data. Applications requiring automotive-grade certification should prioritize the primary part or verify AEC-Q101 status with manufacturers before substitution.

Frequently Asked Questions (FAQ)

Q: Can RS3G-E3/57T be used as a direct replacement for RS3GHE3_A/I?

A: Yes. RS3G-E3/57T is a parametric equivalent with identical electrical specifications: 400 V reverse voltage, 3 A average rectified current, 1.3 V forward voltage at 2.5 A, 150 ns reverse recovery time, and DO-214AB packaging. Both devices are manufactured by Vishay and carry Active product status with ROHS3 compliance.

Q: What is the difference between the Vishay RS3G series and the Taiwan Semiconductor ES3G/HS3G series?

A: All devices meet the core electrical requirements of 400 V reverse voltage and 3 A current rating in DO-214AB packaging. The primary differences are reverse recovery time (Vishay RS3G: 150 ns; Taiwan Semiconductor ES3G: 35 ns; Taiwan Semiconductor HS3G: 50 ns) and junction capacitance. Taiwan Semiconductor devices are discontinued at DiGi Electronics, limiting future availability. Vishay devices maintain active status with higher inventory levels.

Q: Is the UF3G_R1_00001 suitable for automotive applications?

A: The UF3G_R1_00001 meets the electrical and packaging requirements for general-purpose rectification at 400 V and 3 A. However, the provided data does not indicate AEC-Q101 automotive qualification for this device. The primary part RS3GHE3_A/I carries explicit AEC-Q101 qualification. Automotive applications requiring this certification should verify qualification status with Panjit International Inc. before substitution.

Q: Can I substitute a device with lower reverse recovery time (trr)?

A: Yes. Devices with lower reverse recovery time (such as ES3G V7G at 35 ns or HS3G series at 50 ns compared to the primary part's 150 ns) are suitable substitutes. Lower reverse recovery time represents improved performance and does not compromise circuit function. All substitute devices remain within the fast recovery classification (≤ 500 ns, > 200 mA).

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts are packaged in DO-214AB (SMC) surface mount configuration, ensuring mechanical and thermal compatibility with existing PCB layouts. Packaging variations exist only in tape format (Tape & Reel versus Cut Tape), which affects handling and assembly processes but not electrical or mechanical compatibility.

Q: What is the significance of the 44 pF capacitance specification?

A: Junction capacitance at 4 V and 1 MHz is a secondary parameter that affects high-frequency circuit behavior. The primary part specifies 44 pF. Substitute parts vary: ES3G V7G at 30 pF, HS3G series at 80 pF, and UF3G_R1_00001 at 75 pF. These variations are acceptable within the fast recovery diode classification and do not affect primary rectification function. Applications with specific capacitance requirements should verify compatibility with circuit design parameters.

Q: Why is the reverse leakage current specification important?

A: Reverse leakage current (specified at 10 µA for the primary part and most substitutes, 1 µA for UF3G_R1_00001) indicates the quality of the diode junction. Lower leakage current represents superior junction quality and reduced power dissipation in reverse bias conditions. The UF3G_R1_00001 with 1 µA leakage provides enhanced performance in this parameter. All values remain within acceptable limits for general-purpose rectification.

Q: Can I use discontinued parts like ES3G V7G or HS3G V7G?

A: Discontinued parts are available from current inventory (ES3G V7G: 6374 pieces; HS3G V7G: 1920 pieces) but carry risk of future unavailability. These devices are suitable for immediate procurement but should not be specified for long-term production programs. Active-status alternatives (RS3G-E3/57T, RS3G-E3/9AT, UF3G_R1_00001) are recommended for designs requiring sustained component availability.

Q: What is the difference between Tape & Reel (TR) and Cut Tape (CT) packaging?

A: Tape & Reel packaging supplies components on continuous tape suitable for automated pick-and-place assembly equipment. Cut Tape packaging supplies components on individual tape segments. Both formats contain identical components in DO-214AB packages. Selection depends on assembly process requirements and equipment compatibility. Tape & Reel is standard for high-volume automated assembly; Cut Tape is suitable for lower-volume or manual assembly operations.

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