RS3DHM6G Equivalent & Substitute Parts

Part Overview

The RS3DHM6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 3 A average rectified current in a surface mount DO-214AB (SMC) package. This component is classified as discontinued at DiGi Electronics, indicating limited availability through standard distribution channels. The part carries automotive-grade qualification (AEC-Q101) and is ROHS3 compliant. Due to its discontinued status, equivalent substitute parts with identical or superior electrical characteristics are necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 3 A	V
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	150	ns
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AB, SMC	—
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the RS3DHM6G is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal 200 V
Current - Average Rectified (Io): Must equal 3 A
Mounting Type: Must be Surface Mount
Package / Case: Must be DO-214AB (SMC) or compatible SMC variant
Technology: Must be Standard
RoHS Status: Must be ROHS3 Compliant

Secondary Compatibility Factors:

Forward voltage (Vf) at rated current: Acceptable range 875 mV to 1.3 V @ 3 A
Reverse recovery time (trr): Acceptable range 25 ns to 150 ns
Reverse leakage current: Acceptable range 5 µA to 10 µA @ 200 V
Operating temperature range: Must support minimum -55°C to 150°C junction temperature

Parts that meet all primary criteria are classified as direct equivalents. Parts that meet primary criteria but differ in secondary parameters (such as forward voltage or recovery time) are classified as functional equivalents with noted performance variations.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf @ If	Speed	trr	Ir @ Vr	Package	Product Status
RS3DHM6G	Taiwan Semiconductor	200 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500ns	150 ns	10 µA @ 200 V	DO-214AB (SMC)	Discontinued
RS3DH	Taiwan Semiconductor	200 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500ns	150 ns	10 µA @ 200 V	DO-214AB (SMC)	Active
CFRC303-G	Comchip Technology	200 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500ns	150 ns	5 µA @ 200 V	DO-214AB (SMC)	Active
ER3D-TP	Micro Commercial Co	200 V	3 A	950 mV @ 3 A	Fast Recovery ≤ 500ns	35 ns	5 µA @ 200 V	DO-214AB (SMC)	Active
ES3D-13-F	Diodes Incorporated	200 V	3 A	900 mV @ 3 A	Fast Recovery ≤ 500ns	25 ns	10 µA @ 200 V	DO-214AB (SMC)	Active
ES3DB-13-F	Diodes Incorporated	200 V	3 A	900 mV @ 3 A	Fast Recovery ≤ 500ns	25 ns	10 µA @ 200 V	DO-214AA (SMB)	Active
MURS320-13-F	Diodes Incorporated	200 V	3 A	875 mV @ 3 A	Fast Recovery ≤ 500ns	25 ns	5 µA @ 200 V	DO-214AB (SMC)	Active
RS3D-13-F	Diodes Incorporated	200 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500ns	150 ns	5 µA @ 200 V	DO-214AB (SMC)	Active
S3D-13-F	Diodes Incorporated	200 V	3 A	1.15 V @ 3 A	Standard Recovery >500ns	—	10 µA @ 200 V	DO-214AB (SMC)	Active
S3D-TP	Micro Commercial Co	200 V	3 A	1.2 V @ 3 A	Standard Recovery >500ns	—	10 µA @ 200 V	DO-214AB (SMC)	Not For New Designs

Engineering Selection Recommendations

Direct Equivalent (Identical Electrical Performance):

RS3DH is the primary direct equivalent to RS3DHM6G. Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical specifications across all parameters. RS3DH is currently in active production status with 3930 units in stock, providing immediate availability. This part is the recommended first choice for direct replacement.

RS3D-13-F (Diodes Incorporated) is a secondary direct equivalent, matching all critical electrical parameters including forward voltage and recovery time. This part is actively produced with 5250 units available.

Functional Equivalents (Acceptable Performance Variations):

CFRC303-G (Comchip Technology) meets all primary substitution criteria with identical voltage and current ratings. The reverse leakage current is lower (5 µA versus 10 µA), representing improved performance. This part is actively produced with 689 units in stock.

ER3D-TP (Micro Commercial Co) meets all primary criteria with superior performance characteristics: lower forward voltage (950 mV versus 1.3 V) and significantly faster recovery time (35 ns versus 150 ns). Operating temperature range extends to 175°C. This part has the highest inventory availability at 16,840 units.

ES3D-13-F (Diodes Incorporated) meets all primary criteria with superior performance: lower forward voltage (900 mV), faster recovery time (25 ns), and specified capacitance (45 pF @ 4V, 1MHz). Inventory is 45,182 units, the highest among all substitutes.

MURS320-13-F (Diodes Incorporated) meets all primary criteria with the lowest forward voltage (875 mV) and fastest recovery time (25 ns). Operating temperature range extends to 175°C. Inventory is 7,630 units.

Package Variant:

ES3DB-13-F is electrically identical to ES3D-13-F but uses DO-214AA (SMB) package instead of DO-214AB (SMC). This part is suitable only if the PCB layout accommodates the SMB package footprint.

Not Recommended for New Designs:

S3D-TP (Micro Commercial Co) carries "Not For New Designs" status despite meeting electrical criteria. This designation indicates manufacturer phase-out and should be avoided for new product development.

S3D-13-F uses standard recovery technology (>500ns) rather than fast recovery, making it unsuitable for applications requiring fast switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can RS3DHM6G be replaced with RS3DH?

A: Yes. RS3DH is a direct equivalent manufactured by the same company with identical electrical specifications. The primary difference is packaging format (Tape & Reel versus bulk). RS3DH is actively produced and recommended as the primary replacement.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to how quickly the diode transitions from conducting to blocking state. Fast recovery diodes (≤500ns) are suitable for high-frequency switching applications. Standard recovery diodes (>500ns) are appropriate for lower-frequency rectification. The RS3DHM6G specifies fast recovery, so substitutes should maintain this characteristic unless the application permits standard recovery operation.

Q: Can I use ES3D-13-F as a substitute?

A: Yes. ES3D-13-F meets all primary substitution criteria and offers superior performance with lower forward voltage (900 mV versus 1.3 V) and faster recovery time (25 ns versus 150 ns). This part is actively produced with high inventory availability.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in reverse bias. Lower leakage current indicates better blocking performance. Substitutes with 5 µA leakage (versus the original 10 µA) provide improved reverse bias characteristics, which is beneficial in most applications.

Q: Is CFRC303-G suitable for automotive applications?

A: CFRC303-G does not carry explicit automotive-grade designation or AEC-Q101 qualification in the provided specifications. The original RS3DHM6G is automotive-grade with AEC-Q101 qualification. For automotive applications, RS3DH or RS3D-13-F are preferred as they maintain automotive qualification.

Q: Can I use ES3DB-13-F if my PCB is designed for SMC packages?

A: No. ES3DB-13-F uses DO-214AA (SMB) package, which has a different footprint than the DO-214AB (SMC) package specified for RS3DHM6G. PCB layout modifications would be required. Use ES3D-13-F instead, which maintains the SMC package.

Q: Why does ER3D-TP have a lower forward voltage than the original part?

A: Forward voltage variation is a normal characteristic difference between manufacturers and process technologies. ER3D-TP's lower forward voltage (950 mV versus 1.3 V) represents improved efficiency with reduced power dissipation at rated current. This is a beneficial performance improvement for most applications.

Q: Should I avoid S3D-TP due to its "Not For New Designs" status?

A: Yes. "Not For New Designs" indicates the manufacturer is phasing out this part. While it may function as a substitute, using it in new product development creates future supply risk and potential obsolescence issues. Select from parts with "Active" status instead.

Q: What does ROHS3 compliance mean?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead and other hazardous materials. All listed substitutes are ROHS3 compliant, ensuring environmental and regulatory compatibility.

Q: Can I use a 5 A rated diode instead of the 3 A RS3DHM6G?

A: CGRC503-G is a 5 A rated part at 200 V, but it uses standard recovery technology (>500ns) rather than fast recovery. Additionally, it has different forward voltage characteristics (1.15 V @ 5 A). This part is not a direct substitute due to different current rating and recovery speed. Use only if the application specifically permits higher current rating and standard recovery operation.

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