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RS1M-13 Equivalent & Substitute Parts
Part Overview
The RS1M-13 is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 1 A average rectified current in a surface mount SMA package (DO-214AC). This component is classified as discontinued at DiGi Electronics, indicating limited availability through primary distribution channels. The part exhibits fast recovery characteristics with a reverse recovery time of 500 ns and operates across a junction temperature range of -65°C to 150°C.
Identification of equivalent and substitute parts is necessary due to the discontinued status of the RS1M-13. Alternative components with matching or superior electrical specifications and compatible packaging enable continued system design and production without redesign requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1000 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 @ 1 A | V |
| Reverse Recovery Time (trr) | 500 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 1000 V |
| Mounting Type | Surface Mount | — |
| Package / Case | DO-214AC, SMA | — |
| Operating Temperature - Junction | -65 to 150 | °C |
Substitute Part Grouping Explanation
Substitution of the RS1M-13 is determined by the following critical parameters:
Voltage Rating: All substitute parts must maintain a minimum DC reverse voltage rating of 1000 V to ensure equivalent circuit protection and reliability.
Current Rating: All substitute parts must support a minimum average rectified current of 1 A to meet load requirements.
Package Compatibility: Surface mount DO-214AC (SMA) packaging is required for mechanical and thermal compatibility with existing PCB layouts.
Recovery Characteristics: Fast recovery (≤500 ns) or standard recovery (>500 ns) classifications determine switching performance. Parts with faster recovery characteristics provide superior performance in high-frequency applications.
Forward Voltage: Forward voltage drop at 1 A determines power dissipation and thermal performance. Lower forward voltage reduces heat generation.
Reverse Leakage Current: Leakage current at rated voltage affects circuit standby power consumption and reliability.
Operating Temperature Range: Junction temperature ratings must accommodate the thermal environment of the application.
Substitute parts are grouped into three categories: direct equivalents (identical electrical specifications and packaging), compatible alternatives (equivalent electrical performance with minor parameter variations), and performance upgrades (enhanced specifications within the same package).
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ 1A [V] | trr [ns] | Ir @ Vr [µA] | Package | Tj (Max) [°C] | Product Status | RoHS |
|---|---|---|---|---|---|---|---|---|---|---|
| RS1M-13 | Diodes Incorporated | 1000 | 1 | 1.3 | 500 | 5 @ 1000V | DO-214AC, SMA | 150 | Discontinued | Non-compliant |
| RS1M-13-F | Diodes Incorporated | 1000 | 1 | 1.3 | 500 | 5 @ 1000V | DO-214AC, SMA | 150 | Active | ROHS3 Compliant |
| RGF1M-E3/67A | Vishay General Semiconductor | 1000 | 1 | 1.3 | 500 | 5 @ 1000V | DO-214BA | 175 | Active | ROHS3 Compliant |
| RGF1M | onsemi | 1000 | 1 | 1.3 | 500 | 5 @ 1000V | DO-214AC, SMA | 175 | Not For New Designs | ROHS3 Compliant |
| CGRA4007-G | Comchip Technology | 1000 | 1 | 1.1 | — | 5 @ 1000V | DO-214AC, SMA | 150 | Active | ROHS3 Compliant |
| CURA107-G | Comchip Technology | 1000 | 1 | 1.7 | 75 | 5 @ 1000V | DO-214AC, SMA | 150 | Active | ROHS3 Compliant |
| GF1M | onsemi | 1000 | 1 | 1.2 | 2000 | 5 @ 1000V | DO-214AC, SMA | 175 | Not For New Designs | ROHS3 Compliant |
| GS1M-LTP | Micro Commercial Co | 1000 | 1 | 1.0 | — | 10 @ 1000V | DO-214AC, SMA | 150 | Active | ROHS3 Compliant |
| MRA4007T3G | onsemi | 1000 | 1 | 1.1 | — | 10 @ 1000V | DO-214AC, SMA | 175 | Not For New Designs | ROHS3 Compliant |
| RS1K | Fairchild Semiconductor | 800 | 1 | 1.3 | 500 | 5 @ 800V | DO-214AC, SMA | 150 | Active | — |
| S1M | EVVO Semi | 1000 | 1 | 1.1 | — | 5 @ 1000V | DO-214AC, SMA | 150 | Active | ROHS3 Compliant |
Engineering Selection Recommendations
Direct Equivalent (Recommended Primary Selection):
RS1M-13-F from Diodes Incorporated provides identical electrical specifications to the RS1M-13 with matching voltage, current, recovery time, and forward voltage characteristics. The primary distinction is product status: RS1M-13-F is active and ROHS3 compliant, whereas the original RS1M-13 is discontinued and RoHS non-compliant. This part is the direct functional replacement with no design modifications required.
Compatible Alternatives (Voltage and Current Match):
CGRA4007-G (Comchip Technology) and S1M (EVVO Semi) maintain the 1000 V / 1 A specifications with DO-214AC SMA packaging. Both are active products with ROHS3 compliance. CGRA4007-G exhibits lower forward voltage (1.1 V vs. 1.3 V), reducing power dissipation. S1M provides identical reverse leakage current (5 µA) and forward voltage characteristics comparable to the original part.
GS1M-LTP (Micro Commercial Co) offers the lowest forward voltage drop (1.0 V @ 1 A) among active alternatives, providing superior thermal performance. Reverse leakage current is elevated to 10 µA, which remains acceptable for general-purpose rectification applications.
Performance Upgrade Options:
RGF1M-E3/67A (Vishay General Semiconductor) extends the maximum junction temperature to 175°C while maintaining identical electrical specifications. The DO-214BA package differs from the original SMA package and requires PCB layout verification for mechanical compatibility.
RGF1M (onsemi) provides extended temperature range (-65°C to 175°C) in the original DO-214AC SMA package. Product status is "Not For New Designs," limiting suitability for new development.
CURA107-G (Comchip Technology) delivers ultrafast recovery (75 ns vs. 500 ns), enabling superior performance in high-frequency switching applications. Forward voltage is elevated to 1.7 V, increasing power dissipation. This part is suitable only when faster recovery characteristics provide measurable system benefits.
Voltage Derating Consideration:
RS1K (Fairchild Semiconductor) operates at 800 V maximum reverse voltage, representing a 20% reduction from the 1000 V specification. This part is suitable only for applications where the circuit voltage does not exceed 800 V.
Compliance and Availability:
All recommended alternatives except RS1K carry ROHS3 compliance certification. MRA4007T3G and GF1M are classified as "Not For New Designs" despite active inventory, indicating manufacturer transition away from these products. For new designs, selection should prioritize RS1M-13-F, CGRA4007-G, S1M, or GS1M-LTP.
Frequently Asked Questions (FAQ)
Q: Can RS1M-13-F be used as a direct replacement for RS1M-13?
A: Yes. RS1M-13-F is the direct equivalent with identical electrical specifications (1000 V, 1 A, 1.3 V forward voltage, 500 ns recovery time) and identical DO-214AC SMA packaging. The only differences are product status (active vs. discontinued) and RoHS compliance (ROHS3 vs. non-compliant). No circuit modifications are required.
Q: What is the difference between DO-214AC and DO-214BA packages?
A: Both are surface mount packages for 1 A rectifier diodes. DO-214AC (SMA) and DO-214BA (GF1) have different physical dimensions and PCB footprints. RGF1M-E3/67A uses DO-214BA, requiring verification that the PCB layout accommodates the different package geometry. Consult package datasheets for specific dimensional requirements.
Q: Can I use RS1K as a substitute for RS1M-13?
A: RS1K is suitable only if the circuit voltage does not exceed 800 V. The RS1K maximum reverse voltage rating is 800 V compared to 1000 V for RS1M-13. Using RS1K in a 1000 V circuit creates risk of diode failure and circuit damage. Verify circuit voltage requirements before selecting this part.
Q: Which substitute offers the lowest power dissipation?
A: GS1M-LTP exhibits the lowest forward voltage drop at 1.0 V @ 1 A, resulting in the lowest power dissipation (P = Vf × I = 1.0 W). CGRA4007-G and S1M follow with 1.1 V forward voltage (1.1 W dissipation). The original RS1M-13 and RS1M-13-F dissipate 1.3 W. Lower forward voltage reduces thermal load on the PCB and component.
Q: What is the significance of reverse recovery time?
A: Reverse recovery time (trr) determines how quickly the diode transitions from conducting to blocking state. Shorter recovery times (75 ns for CURA107-G vs. 500 ns for RS1M-13) enable faster switching and reduced switching losses in high-frequency applications. Standard recovery parts (>500 ns) are suitable for line-frequency and low-frequency rectification. Fast recovery parts (≤500 ns) are required for switching power supplies and inverters.
Q: Are all substitute parts RoHS compliant?
A: All recommended substitute parts except RS1K carry ROHS3 compliance certification. RS1K compliance status is not specified in the provided data. For applications requiring RoHS compliance, select from RS1M-13-F, RGF1M-E3/67A, RGF1M, CGRA4007-G, CURA107-G, GF1M, GS1M-LTP, MRA4007T3G, or S1M.
Q: What is the difference between "Active" and "Not For New Designs" product status?
A: "Active" status indicates the manufacturer continues production and supports the part for new designs. "Not For New Designs" indicates the manufacturer is transitioning away from the product, though existing inventory may remain available. For new development projects, prioritize parts with "Active" status to ensure long-term availability and manufacturer support.
Q: Can I substitute a part with a higher maximum junction temperature?
A: Yes, provided all other electrical specifications meet or exceed the original part requirements. RGF1M-E3/67A and RGF1M both support -65°C to 175°C operation compared to -65°C to 150°C for RS1M-13. Higher temperature ratings provide additional thermal margin and are suitable for high-temperature environments. Verify that the application does not require the lower temperature rating of the original part.
Q: What is reverse leakage current and why does it vary among substitutes?
A: Reverse leakage current (Ir) is the small current that flows through the diode when reverse biased. Typical values range from 5 µA to 10 µA at rated voltage. Higher leakage current increases standby power consumption and heat generation. For general-purpose rectification, both 5 µA and 10 µA leakage currents are acceptable. For precision analog circuits or low-power applications, select parts with lower leakage current (5 µA).
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