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RS1JL RUG Equivalent & Substitute Parts
Part Overview
The RS1JL RUG is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 800 mA average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and complies with ROHS3 and REACH standards. Substitute parts are identified based on matching electrical specifications, package compatibility, and thermal operating ranges to ensure functional equivalence in circuit applications.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 800 mA |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 800 mA |
| Reverse Recovery Time (trr) | 250 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Speed Classification | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Package / Case | DO-219AB |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts for the RS1JL RUG are classified into two categories based on electrical parameter alignment:
Parametric Equivalents (Direct Substitutes): Parts RS1JL R3G and RS1JL RVG are parametric equivalents manufactured by Taiwan Semiconductor Corporation. These parts match all critical electrical specifications including 600 V reverse voltage, 800 mA average rectified current, 1.3 V forward voltage at 800 mA, 250 ns reverse recovery time, and identical package configuration (DO-219AB Sub SMA). These parts are interchangeable without circuit modification.
Similar Parts (Cross-Manufacturer Alternatives): Parts VS-1EFU06HM3/I and VS-2EFU06HM3/I are manufactured by Vishay General Semiconductor - Diodes Division. These parts share the same 600 V reverse voltage rating and DO-219AB package but differ in current rating and certain electrical characteristics. Substitution requires verification of circuit current requirements and thermal performance expectations.
Substitution logic is based on the following key parameters:
- Voltage - DC Reverse (Vr) (Max): 600 V
- Package / Case: DO-219AB
- Mounting Type: Surface Mount
- Current - Average Rectified (Io): 800 mA (for parametric equivalents)
- Operating Temperature Range compatibility
Parameter Comparison
| Parameter | RS1JL RUG | RS1JL R3G | RS1JL RVG | VS-1EFU06HM3/I | VS-2EFU06HM3/I |
|---|---|---|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Current - Average Rectified (Io) | 800 mA | 800 mA | 800 mA | 1 A | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 800 mA | 1.3 V @ 800 mA | 1.3 V @ 800 mA | 1.2 V @ 1 A | 1.35 V @ 2 A |
| Reverse Recovery Time (trr) | 250 ns | 250 ns | 250 ns | 32 ns | 55 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V | 5 µA @ 600 V | 5 µA @ 600 V | 3 µA @ 600 V | 3 µA @ 600 V |
| Speed Classification | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Package / Case | DO-219AB | DO-219AB | DO-219AB | DO-219AB | DO-219AB |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 175°C | -55°C ~ 175°C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
Parametric Equivalent Selection (RS1JL R3G, RS1JL RVG): These Taiwan Semiconductor Corporation parts are direct functional equivalents to the RS1JL RUG. All electrical parameters, package specifications, and compliance certifications are identical. Selection between RS1JL RUG, RS1JL R3G, and RS1JL RVG is based on inventory availability and lead time requirements. All three parts maintain ROHS3 compliance, REACH unaffected status, and identical thermal operating ranges.
Cross-Manufacturer Alternative Selection (VS-1EFU06HM3/I, VS-2EFU06HM3/I): The Vishay FRED Pt® series parts offer enhanced performance characteristics including significantly lower reverse recovery times (32 ns and 55 ns respectively versus 250 ns) and extended operating temperature range (-55°C ~ 175°C versus -55°C ~ 150°C). These parts carry AEC-Q101 automotive qualification. Selection of VS-1EFU06HM3/I (1 A rating) or VS-2EFU06HM3/I (2 A rating) requires circuit analysis to confirm current requirements do not exceed 800 mA at nominal operating conditions. Both Vishay alternatives maintain ROHS3 compliance and MSL 1 rating.
All substitute parts are Active product status with established supply chains and full regulatory compliance documentation.
Frequently Asked Questions (FAQ)
Q: Can RS1JL R3G and RS1JL RVG be used interchangeably with RS1JL RUG?
A: Yes. RS1JL R3G and RS1JL RVG are parametric equivalents with identical electrical specifications, package configuration, and operating temperature range. These parts are direct substitutes without circuit modification requirements.
Q: What are the key differences between Taiwan Semiconductor Corporation and Vishay alternatives?
A: The primary differences are reverse recovery time and operating temperature range. Vishay VS-1EFU06HM3/I and VS-2EFU06HM3/I feature significantly faster reverse recovery times (32 ns and 55 ns respectively) compared to 250 ns for Taiwan Semiconductor parts. Vishay parts also support extended junction temperature operation to 175°C. Current ratings differ: VS-1EFU06HM3/I is rated 1 A and VS-2EFU06HM3/I is rated 2 A, compared to 800 mA for the RS1JL series.
Q: Can VS-2EFU06HM3/I replace RS1JL RUG in all applications?
A: VS-2EFU06HM3/I has a higher current rating (2 A versus 800 mA) and lower reverse recovery time (55 ns versus 250 ns). Circuit operation at currents exceeding 800 mA is within the capability of VS-2EFU06HM3/I. However, applications designed for 800 mA operation do not require the higher current rating. Both parts share identical 600 V reverse voltage rating and DO-219AB package configuration.
Q: Are all substitute parts compliant with RoHS and REACH regulations?
A: Yes. All listed substitute parts (RS1JL R3G, RS1JL RVG, VS-1EFU06HM3/I, and VS-2EFU06HM3/I) are ROHS3 compliant and REACH unaffected. Moisture sensitivity level is MSL 1 (Unlimited) for all parts.
Q: What is the difference between Sub SMA and DO-219AB package designations?
A: Sub SMA and DO-219AB refer to the same physical package configuration. Sub SMA is the supplier device package designation used by Taiwan Semiconductor Corporation. DO-219AB (SMF) is the standard package case designation used by Vishay. All parts listed are mechanically and electrically compatible in the same PCB footprint.
Q: Which substitute part offers the best performance for high-frequency switching applications?
A: VS-1EFU06HM3/I and VS-2EFU06HM3/I from the Vishay FRED Pt® series offer significantly lower reverse recovery times (32 ns and 55 ns respectively) compared to 250 ns for Taiwan Semiconductor parts. Lower reverse recovery time reduces switching losses and improves efficiency in high-frequency applications. Selection between VS-1EFU06HM3/I (1 A) and VS-2EFU06HM3/I (2 A) depends on circuit current requirements.
Q: Is automotive qualification required for my application?
A: VS-1EFU06HM3/I and VS-2EFU06HM3/I carry AEC-Q101 automotive qualification. Taiwan Semiconductor RS1JL series parts do not list automotive qualification. If automotive-grade components are required, Vishay alternatives are appropriate selections.
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