RS1JL R3G Equivalent & Substitute Parts

Part Overview

The RS1JL R3G is a general-purpose fast recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. This surface mount component operates at 600 V DC reverse voltage with 800 mA average rectified current and features a Sub SMA package (DO-219AB). The device is classified as Active product status and complies with RoHS3 and REACH regulations. Equivalent and substitute parts are identified based on matching electrical specifications and mechanical compatibility within the rectifier diode category.

Substiute Parts

RS1JL R3G
Taiwan Semiconductor CorporationIn Stock: 1557RS1JL R3G Datasheet
RS1JL R3G
Current Part
RS1JL RVG
Taiwan Semiconductor CorporationIn Stock: 849RS1JL RVG Datasheet
RS1JL RVG
Parametric Equivalent
VS-1EFU06HM3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 36349VS-1EFU06HM3/I Datasheet
VS-1EFU06HM3/I
Similar
VS-2EFU06HM3/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 10260VS-2EFU06HM3/I Datasheet
VS-2EFU06HM3/I
Similar

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 800 mA
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 800 mA
Speed Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 250 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Package / Case DO-219AB (Sub SMA)
Mounting Type Surface Mount
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status RoHS3 Compliant

Substitute Part Grouping Explanation

Substitution of rectifier diodes is determined by electrical parameter compatibility and mechanical package equivalence. The primary criteria for substitution are:

Electrical Parameters:

  • Voltage - DC Reverse (Vr) rating must equal or exceed the original specification
  • Current - Average Rectified (Io) must meet or exceed the original specification
  • Forward voltage drop (Vf) characteristics must be compatible with circuit design
  • Reverse recovery time (trr) must support the intended switching frequency
  • Reverse leakage current must not exceed acceptable limits for the application

Mechanical Parameters:

  • Package / Case designation must be identical (DO-219AB)
  • Mounting type must be Surface Mount
  • Supplier device package must be compatible (Sub SMA or DO-219AB SMF)

Compliance Parameters:

  • RoHS3 compliance status
  • REACH status
  • Moisture Sensitivity Level (MSL)

The RS1JL R3G is grouped with RS1JL RVG as a parametric equivalent (identical electrical and mechanical specifications from the same manufacturer) and with VS-1EFU06HM3/I and VS-2EFU06HM3/I as similar alternatives from Vishay General Semiconductor - Diodes Division.

Parameter Comparison

Parameter RS1JL R3G RS1JL RVG VS-1EFU06HM3/I VS-2EFU06HM3/I
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 800 mA 800 mA 1 A 2 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 800 mA 1.3 V @ 800 mA 1.2 V @ 1 A 1.35 V @ 2 A
Speed Fast Recovery ≤ 500 ns, > 200 mA (Io) Fast Recovery ≤ 500 ns, > 200 mA (Io) Fast Recovery ≤ 500 ns, > 200 mA (Io) Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 250 ns 250 ns 32 ns 55 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 3 µA @ 600 V 3 µA @ 600 V
Package / Case DO-219AB DO-219AB DO-219AB DO-219AB
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 175°C
RoHS Status RoHS3 Compliant RoHS3 Compliant RoHS3 Compliant RoHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

RS1JL RVG is a direct parametric equivalent to the RS1JL R3G. Both devices share identical electrical specifications, package designation, and compliance certifications. Selection between these two Taiwan Semiconductor Corporation parts is based on inventory availability and supply chain considerations.

VS-1EFU06HM3/I is a compatible substitute with higher current rating (1 A versus 800 mA) and superior reverse recovery time (32 ns versus 250 ns). This Vishay device operates across an extended temperature range (-55°C to 175°C versus -55°C to 150°C) and carries AEC-Q101 automotive qualification. The lower reverse leakage current (3 µA versus 5 µA) and improved switching characteristics make this part suitable for applications requiring enhanced performance margins.

VS-2EFU06HM3/I is a higher-current alternative (2 A rating) from Vishay General Semiconductor - Diodes Division. This device provides additional current capacity with a reverse recovery time of 55 ns and maintains the same 600 V reverse voltage rating. The extended operating temperature range and automotive qualification apply to this part as well.

All substitute parts maintain DO-219AB package compatibility, Surface Mount mounting type, RoHS3 compliance, and MSL 1 rating. Selection should be based on circuit current requirements, switching frequency demands, and temperature operating conditions.

Frequently Asked Questions (FAQ)

Q: Can RS1JL RVG be used as a direct replacement for RS1JL R3G?

A: Yes. RS1JL RVG is a parametric equivalent with identical voltage rating (600 V), current rating (800 mA), forward voltage characteristics (1.3 V @ 800 mA), reverse recovery time (250 ns), and package designation (DO-219AB Sub SMA). Both devices are manufactured by Taiwan Semiconductor Corporation and carry identical compliance certifications.

Q: What is the difference between the Taiwan Semiconductor Corporation RS1JL series and the Vishay VS-1EFU06HM3/I?

A: The primary differences are current rating and reverse recovery time. VS-1EFU06HM3/I is rated for 1 A average rectified current compared to 800 mA for RS1JL R3G, and features a significantly faster reverse recovery time of 32 ns versus 250 ns. VS-1EFU06HM3/I also operates across a wider temperature range (-55°C to 175°C) and includes AEC-Q101 automotive qualification. Both maintain the same 600 V reverse voltage rating and DO-219AB package.

Q: Is VS-2EFU06HM3/I suitable for an 800 mA application?

A: Yes. VS-2EFU06HM3/I is rated for 2 A average rectified current, which exceeds the 800 mA requirement. The device maintains 600 V reverse voltage compatibility and DO-219AB package equivalence. The higher current rating provides design margin without introducing incompatibility.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. RS1JL R3G, RS1JL RVG, VS-1EFU06HM3/I, and VS-2EFU06HM3/I are all RoHS3 compliant and REACH unaffected. All parts carry MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the significance of reverse recovery time differences between these parts?

A: Reverse recovery time (trr) determines switching speed and affects circuit efficiency at higher frequencies. RS1JL R3G and RS1JL RVG specify 250 ns trr, while VS-1EFU06HM3/I specifies 32 ns and VS-2EFU06HM3/I specifies 55 ns. Lower reverse recovery time reduces switching losses and enables operation at higher switching frequencies. Selection depends on circuit switching frequency requirements.

Q: Can these parts be used interchangeably in automotive applications?

A: VS-1EFU06HM3/I and VS-2EFU06HM3/I carry AEC-Q101 automotive qualification. RS1JL R3G and RS1JL RVG do not list automotive qualification. For automotive applications requiring AEC-Q101 compliance, Vishay parts are the appropriate selection.

Q: What is the operating temperature difference between RS1JL R3G and VS-1EFU06HM3/I?

A: RS1JL R3G operates from -55°C to 150°C junction temperature, while VS-1EFU06HM3/I operates from -55°C to 175°C. The Vishay device provides 25°C additional high-temperature margin, which may be beneficial in thermally demanding applications.

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