RS1BHE3_A/I Equivalent & Substitute Parts

Part Overview

The RS1BHE3_A/I is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 100 V DC reverse voltage with 1 A average rectified current in a DO-214AC (SMA) package. The device is classified as Active product status and carries AEC-Q101 automotive qualification.

Substitute parts are necessary when the primary part number becomes unavailable, when alternative packaging configurations are required for specific manufacturing processes, or when equivalent performance specifications from different manufacturers are needed to maintain supply chain flexibility.

Substiute Parts

RS1BHE3_A/I
Vishay General Semiconductor - Diodes DivisionIn Stock: 795RS1BHE3_A/I Datasheet
RS1BHE3_A/I
Current Part
RS1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 15322RS1B-E3/5AT Datasheet
RS1B-E3/5AT
Parametric Equivalent
RS1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 7879RS1B-E3/61T Datasheet
RS1B-E3/61T
Parametric Equivalent
EGF1B
Fairchild SemiconductorIn Stock: 4165EGF1B Datasheet
EGF1B
MFR Recommended
ES1B
YAGEOIn Stock: 65171ES1B Datasheet
ES1B
MFR Recommended
ES1B-13-F
Diodes IncorporatedIn Stock: 35153ES1B-13-F Datasheet
ES1B-13-F
MFR Recommended
ES1B-LTP
Micro Commercial CoIn Stock: 17292ES1B-LTP Datasheet
ES1B-LTP
MFR Recommended
GF1B
onsemiIn Stock: 1396GF1B Datasheet
GF1B
MFR Recommended
GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
MFR Recommended
RS1B R3G
Taiwan Semiconductor CorporationIn Stock: 4541RS1B R3G Datasheet
RS1B R3G
Parametric Equivalent
RS1B_R1_00001
Panjit International Inc.In Stock: 6367RS1B_R1_00001 Datasheet
RS1B_R1_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Capacitance @ Vr, F 10 pF @ 4V, 1MHz
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55 to 150 °C
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the RS1BHE3_A/I is determined by electrical and mechanical parameter equivalence within the following criteria:

Primary Substitution Parameters:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Mounting Type: Surface Mount

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If: ≤ 1.3 V @ 1 A
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): ≤ 150 ns
  • Current - Reverse Leakage @ Vr: ≤ 5 µA @ 100 V
  • Operating Temperature - Junction: -55°C to 150°C minimum

Substitute parts are grouped into three categories:

Parametric Equivalents: Parts with identical electrical specifications and packaging from the same or different manufacturers. These include RS1B-E3/5AT, RS1B-E3/61T, and RS1B R3G.

Manufacturer Recommended Equivalents: Parts from alternative manufacturers (Fairchild Semiconductor, YAGEO, Diodes Incorporated, Micro Commercial Co, onsemi, Taiwan Semiconductor Corporation, Panjit International Inc.) that meet or exceed the primary electrical and mechanical requirements while maintaining DO-214AC (SMA) package compatibility.

Functional Equivalents with Relaxed Parameters: Parts such as GF1B and GS1B-LTP that maintain voltage and current ratings but may have different speed classifications or reverse recovery characteristics. These are suitable for applications where fast recovery is not a critical requirement.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] Speed trr [ns] Ir @ Vr [µA @ V] Package Tj [°C] Product Status
RS1BHE3_A/I Vishay General Semiconductor 100 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 5 @ 100 DO-214AC (SMA) -55 to 150 Active
RS1B-E3/5AT Vishay General Semiconductor 100 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 5 @ 100 DO-214AC (SMA) -55 to 150 Active
RS1B-E3/61T Vishay General Semiconductor 100 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 5 @ 100 DO-214AC (SMA) -55 to 150 Active
EGF1B Fairchild Semiconductor 100 1 1.0 @ 1 Fast Recovery ≤ 500ns 50 10 @ 100 DO-214AC (SMA) -65 to 175 Active
ES1B YAGEO 100 0.95 Active
ES1B-13-F Diodes Incorporated 100 1 0.92 @ 1 Fast Recovery ≤ 500ns 25 5 @ 100 DO-214AC (SMA) -55 to 150 Active
ES1B-LTP Micro Commercial Co 100 1 0.95 @ 1 Fast Recovery ≤ 500ns 35 5 @ 100 DO-214AC (SMA) -65 to 175 Not For New Designs
GF1B onsemi 100 1 1.0 @ 1 Standard Recovery >500ns 2000 5 @ 100 DO-214AC (SMA) -65 to 175 Not For New Designs
GS1B-LTP Micro Commercial Co 100 1 1.0 @ 1 Standard Recovery >500ns 10 @ 100 DO-214AC (SMA) -55 to 150 Not For New Designs
RS1B R3G Taiwan Semiconductor Corporation 100 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 5 @ 100 DO-214AC (SMA) -55 to 150 Discontinued at DiGi Electronics
RS1B_R1_00001 Panjit International Inc. 100 1 1.3 @ 1 Fast Recovery ≤ 500ns 150 1 @ 100 DO-214AC (SMA) -55 to 150 Active

Engineering Selection Recommendations

Preferred Substitutes (Active Product Status):

RS1B-E3/5AT and RS1B-E3/61T from Vishay General Semiconductor are direct parametric equivalents to the RS1BHE3_A/I. Both parts maintain identical electrical specifications, package configuration, and operating temperature range. These parts are recommended as primary substitutes due to identical performance characteristics and active product status.

ES1B-13-F from Diodes Incorporated is an active substitute that meets all primary electrical requirements. This part demonstrates improved reverse recovery time (25 ns versus 150 ns) and lower forward voltage drop (0.92 V versus 1.3 V), providing enhanced performance characteristics within the same package and temperature range.

RS1B_R1_00001 from Panjit International Inc. is an active substitute with identical electrical specifications to the main part. This device offers superior reverse leakage current performance (1 µA versus 5 µA at 100 V), making it suitable for applications requiring lower leakage characteristics.

Alternative Substitutes (Active Product Status with Extended Temperature Range):

EGF1B from Fairchild Semiconductor is an active substitute with extended operating temperature range (-65°C to 175°C versus -55°C to 150°C). This part provides improved reverse recovery time (50 ns) and lower forward voltage drop (1.0 V), with the trade-off of higher reverse leakage current (10 µA).

Substitutes Not Recommended for New Designs:

ES1B-LTP, GF1B, and GS1B-LTP carry "Not For New Designs" product status and should not be selected for new circuit designs. These parts are available for legacy system support and maintenance applications only.

RS1B R3G is discontinued at DiGi Electronics and should not be used for new applications.

Compliance and Certification:

All active substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with the main part. The RS1BHE3_A/I carries AEC-Q101 automotive qualification; equivalent automotive-qualified alternatives should be verified through manufacturer documentation if automotive applications are required.

Frequently Asked Questions (FAQ)

Q: Can RS1B-E3/5AT be used as a direct replacement for RS1BHE3_A/I?

A: Yes. RS1B-E3/5AT is a parametric equivalent with identical voltage rating (100 V), current rating (1 A), forward voltage drop (1.3 V @ 1 A), reverse recovery time (150 ns), and operating temperature range (-55°C to 150°C). Both parts use the DO-214AC (SMA) surface mount package. The primary difference is packaging configuration (Tape & Reel variant designation).

Q: What is the difference between fast recovery and standard recovery diodes in this product line?

A: Fast recovery diodes (RS1BHE3_A/I, RS1B-E3/5AT, RS1B-E3/61T, EGF1B, ES1B-13-F, ES1B-LTP) have reverse recovery times ≤ 500 ns and are suitable for high-frequency switching applications. Standard recovery diodes (GF1B, GS1B-LTP) have reverse recovery times > 500 ns and are appropriate for lower-frequency rectification applications. Selection depends on circuit switching frequency requirements.

Q: Are all substitute parts available in the same DO-214AC (SMA) package?

A: Yes. All substitute parts listed are available in DO-214AC (SMA) surface mount package configuration, ensuring mechanical and electrical compatibility with the original RS1BHE3_A/I footprint and mounting process.

Q: What is the significance of the "Not For New Designs" product status?

A: Parts marked "Not For New Designs" (ES1B-LTP, GF1B, GS1B-LTP) are in mature or declining production phases. These parts remain available for existing product support and maintenance but should not be incorporated into new circuit designs. Manufacturers may discontinue these parts with limited notice.

Q: Does ES1B-13-F offer performance advantages over the main part?

A: ES1B-13-F from Diodes Incorporated provides improved reverse recovery time (25 ns versus 150 ns) and lower forward voltage drop (0.92 V versus 1.3 V @ 1 A). These characteristics result in reduced switching losses and improved efficiency in high-frequency applications. Operating temperature range and package are identical to the main part.

Q: What is the difference between RS1B_R1_00001 and the main part RS1BHE3_A/I?

A: RS1B_R1_00001 from Panjit International Inc. maintains identical electrical specifications with one exception: reverse leakage current is 1 µA @ 100 V compared to 5 µA @ 100 V for the main part. This lower leakage characteristic may be beneficial in applications requiring minimal standby current consumption. All other parameters, including voltage, current, forward drop, and package, are identical.

Q: Can parts with extended temperature range (-65°C to 175°C) be used in applications rated for -55°C to 150°C?

A: Yes. Parts with extended temperature range (EGF1B, ES1B-LTP, GF1B) can be used in applications specified for the narrower -55°C to 150°C range. The extended range provides additional design margin and flexibility for applications subject to temperature extremes. No derating or additional design considerations are required.

Q: What compliance certifications are maintained across all substitute parts?

A: All active substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating. The main part RS1BHE3_A/I carries AEC-Q101 automotive qualification. Automotive-qualified equivalents should be confirmed through individual manufacturer datasheets if automotive applications require this certification.

Q: Is there a performance difference between Vishay variants RS1B-E3/5AT and RS1B-E3/61T?

A: No. RS1B-E3/5AT and RS1B-E3/61T are parametric equivalents with identical electrical specifications. The designation difference reflects packaging reel configuration or manufacturing date code variants. Both parts are suitable as direct replacements for RS1BHE3_A/I.

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