Equivalent & Substitute Parts for RS1B General Purpose Rectifier Diode

Part Overview

The RS1B is a general purpose rectifier diode manufactured by onsemi, rated for 100V DC reverse voltage and 1A average rectified current in a DO-214AC (SMA) surface mount package. This component is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Identification of equivalent and substitute parts is necessary to support existing designs, facilitate procurement alternatives, and enable transition to active product status components where applicable.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.3	V @ 1 A
Reverse Recovery Time (trr)	150	ns
Current - Reverse Leakage @ Vr	5	µA @ 100 V
Package / Case	DO-214AC, SMA	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the RS1B is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 100V minimum
Current - Average Rectified (Io): 1A minimum
Package / Case: DO-214AC (SMA) or DO-214BA (GF1) surface mount packages
Mounting Type: Surface Mount
Technology: Standard rectifier diode technology
RoHS Status: ROHS3 Compliant

Secondary Compatibility Factors:

Voltage - Forward (Vf) (Max) @ If: 1.3V or lower at 1A
Reverse Recovery Time (trr): 150ns or faster
Current - Reverse Leakage @ Vr: 5µA or lower at 100V
Operating Temperature Range: Minimum -55°C to 150°C junction temperature

Parts are grouped into three categories based on their relationship to the RS1B:

Direct Equivalents: Parts with identical electrical specifications and DO-214AC packaging (RS1B-E3/5AT, ES1B-E3/5AT, ES1B-E3/61T, ES1B-LTP).

Package Variants: Parts with equivalent electrical performance but alternative surface mount packages such as DO-214BA (RGF1B-E3/67A, EGF1B-E3/5CA, EGF1B-E3/67A).

Performance Upgrades: Parts meeting or exceeding all RS1B specifications with active product status (MURA110T3G, RS1B-13-F, ESH1B-E3/5AT).

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [V]	trr [ns]	Ir @ Vr [µA]	Package	Product Status
RS1B	onsemi	100	1	1.3	150	5	DO-214AC	Not For New Designs
MURA110T3G	onsemi	100	1	0.875	30	2	DO-214AC	Active
RGF1B-E3/67A	Vishay General Semiconductor - Diodes Division	100	1	1.3	150	5	DO-214BA	Not For New Designs
RS1B-E3/5AT	Vishay General Semiconductor - Diodes Division	100	1	1.3	150	5	DO-214AC	Active
RS1B-13-F	Diodes Incorporated	100	1	1.3	150	5	DO-214AC	Active
EGF1B-E3/5CA	Vishay General Semiconductor - Diodes Division	100	1	1.0	50	5	DO-214BA	Active
EGF1B-E3/67A	Vishay General Semiconductor - Diodes Division	100	1	1.0	50	5	DO-214BA	Not For New Designs
ES1B-E3/5AT	Vishay General Semiconductor - Diodes Division	100	1	0.92	25	5	DO-214AC	Active
ES1B-E3/61T	Vishay General Semiconductor - Diodes Division	100	1	0.92	25	5	DO-214AC	Active
ES1B-LTP	Micro Commercial Co	100	1	0.95	35	5	DO-214AC	Not For New Designs
ESH1B-E3/5AT	Vishay General Semiconductor - Diodes Division	100	1	0.9	25	1	DO-214AC	Active

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

RS1B-E3/5AT (Vishay General Semiconductor - Diodes Division) provides direct electrical and mechanical equivalence with active product status. This part maintains identical voltage, current, and package specifications while ensuring continued availability and manufacturing support.

RS1B-13-F (Diodes Incorporated) offers equivalent performance with active product status and alternative sourcing from a different manufacturer, reducing supply chain risk.

For Performance Enhancement:

MURA110T3G (onsemi) delivers superior performance characteristics including reduced forward voltage drop (0.875V vs. 1.3V), significantly faster reverse recovery time (30ns vs. 150ns), and lower reverse leakage current (2µA vs. 5µA). This part maintains the same package and voltage/current ratings while providing active product status.

ES1B-E3/5AT and ES1B-E3/61T (Vishay General Semiconductor - Diodes Division) provide improved forward voltage characteristics (0.92V) and faster recovery time (25ns) with active product status and DO-214AC packaging.

ESH1B-E3/5AT (Vishay General Semiconductor - Diodes Division) offers the lowest reverse leakage current (1µA) and fastest recovery time (25ns) among active alternatives, with extended operating temperature range (-55°C to 175°C).

For Package Flexibility:

EGF1B-E3/5CA (Vishay General Semiconductor - Diodes Division) provides active product status with superior electrical performance (1.0V forward voltage, 50ns recovery time) in the DO-214BA (GF1) package, suitable for designs where package footprint variation is acceptable.

Compliance Verification:

All listed substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status consistent with the original RS1B specification.

Frequently Asked Questions (FAQ)

Q: Can RS1B-E3/5AT be used as a direct replacement for RS1B?

A: Yes. RS1B-E3/5AT is electrically and mechanically equivalent to RS1B, with identical voltage (100V), current (1A), forward voltage (1.3V @ 1A), recovery time (150ns), and DO-214AC package specifications. The primary advantage is active product status, ensuring continued manufacturing support.

Q: What is the difference between DO-214AC and DO-214BA packages?

A: DO-214AC (SMA) and DO-214BA (GF1) are both surface mount packages for single diodes with identical electrical performance capability. The packages differ in physical dimensions and land pattern. Parts in DO-214BA package (RGF1B-E3/67A, EGF1B-E3/5CA, EGF1B-E3/67A) require PCB layout modification but are electrically compatible with RS1B specifications.

Q: Why does MURA110T3G have lower forward voltage than RS1B?

A: MURA110T3G incorporates improved semiconductor material and junction design, resulting in 0.875V forward voltage compared to RS1B's 1.3V at 1A. This represents a manufacturing advancement while maintaining the same 100V/1A rating and DO-214AC package. Lower forward voltage reduces power dissipation in the application.

Q: Is reverse recovery time critical for substitution?

A: Reverse recovery time (trr) becomes critical in high-frequency switching applications. RS1B specifies 150ns. Faster alternatives such as MURA110T3G (30ns), ES1B-E3/5AT (25ns), and ESH1B-E3/5AT (25ns) reduce switching losses and electromagnetic interference. In low-frequency rectification applications, trr differences are not functionally significant.

Q: Can parts with "Not For New Designs" status be used in new applications?

A: Parts designated "Not For New Designs" (RS1B, RGF1B-E3/67A, EGF1B-E3/67A, ES1B-LTP) remain available for existing design support and maintenance but should not be selected for new product development. Active status alternatives are recommended for new designs to ensure long-term supply availability and manufacturing continuity.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current (Ir) at rated reverse voltage indicates diode quality and temperature stability. RS1B specifies 5µA @ 100V. ESH1B-E3/5AT provides superior performance at 1µA, reducing standby power consumption and improving temperature stability. MURA110T3G at 2µA offers intermediate performance. In most applications, differences below 5µA are not functionally critical.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance identical to the original RS1B, confirming lead-free construction and compliance with hazardous substance restrictions.

Q: What packaging options are available for procurement?

A: RS1B is supplied in Cut Tape (CT) & Digi-Reel® packaging. Substitute parts are available in Cut Tape (CT), Tape & Reel (TR), or Digi-Reel® formats depending on manufacturer and part number. Verify packaging format during procurement to match assembly line requirements.

Q: Can ESH1B-E3/5AT operate at higher temperatures than RS1B?

A: ESH1B-E3/5AT specifies -55°C to 175°C junction temperature range compared to RS1B's -55°C to 150°C. This extended upper temperature limit provides additional thermal margin in high-temperature applications, though both parts meet standard industrial temperature requirements.

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