RN 4A Equivalent & Substitute Parts

Part Overview

The RN 4A is a general-purpose rectifier diode manufactured by Sanken Electric USA Inc., rated for 600 V DC reverse voltage and 3 A average rectified current in an axial through-hole package. This component is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and compliance standards.

Substiute Parts

RN 4A
Sanken Electric USA Inc.In Stock: 948RN 4A Datasheet
RN 4A
Current Part
1N4723
Microchip TechnologyIn Stock: 9541N4723 Datasheet
1N4723
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1N5190
Microchip TechnologyIn Stock: 9871N5190 Datasheet
1N5190
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1N5406-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 51561N5406-E3/54 Datasheet
1N5406-E3/54
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1N5406-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 19071N5406-E3/73 Datasheet
1N5406-E3/73
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1N5406G
Taiwan Semiconductor CorporationIn Stock: 24281N5406G Datasheet
1N5406G
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1N5406RLG
onsemiIn Stock: 168171N5406RLG Datasheet
1N5406RLG
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1N5420
Microchip TechnologyIn Stock: 13241N5420 Datasheet
1N5420
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31GF6-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 414731GF6-E3/54 Datasheet
31GF6-E3/54
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BY253P-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 5977BY253P-E3/54 Datasheet
BY253P-E3/54
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GI506-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6492GI506-E3/54 Datasheet
GI506-E3/54
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GP30J-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 10390GP30J-E3/54 Datasheet
GP30J-E3/54
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GP30J-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 3053GP30J-E3/73 Datasheet
GP30J-E3/73
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RGP30J-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 18742RGP30J-E3/54 Datasheet
RGP30J-E3/54
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STTH3L06
STMicroelectronicsIn Stock: 37342STTH3L06 Datasheet
STTH3L06
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UF5406-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1373UF5406-E3/54 Datasheet
UF5406-E3/54
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UF5406-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 4159UF5406-E3/73 Datasheet
UF5406-E3/73
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Key Parameters

Parameter RN 4A Specification
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V
Mounting Type Through Hole
Package / Case Axial
Operating Temperature - Junction -40°C ~ 150°C
RoHS Status RoHS Compliant

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Mounting Type: Through Hole
  • Package Category: Axial or compatible axial variants (DO-201AD, DO-201AA, DO-27)

Performance Considerations:

  • Speed classification (Fast Recovery vs. Standard Recovery) affects switching characteristics
  • Reverse recovery time (trr) influences high-frequency performance
  • Forward voltage (Vf) and reverse leakage current determine power dissipation and circuit efficiency
  • Operating temperature range establishes thermal operating envelope

Substitute parts are grouped into two categories based on recovery speed characteristics: Fast Recovery devices (trr ≤ 500ns) and Standard Recovery devices (trr > 500ns). The RN 4A is a Fast Recovery diode; however, Standard Recovery alternatives are included where voltage and current ratings are identical, as they remain functionally compatible in most general-purpose rectification applications.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed trr Ir @ Vr Tj (Operating) Product Status RoHS Status
RN 4A Sanken Electric USA Inc. 600 V 3 A 1.3 V @ 3 A Fast Recovery ≤ 500ns 100 ns 50 µA @ 600 V -40°C ~ 150°C Obsolete RoHS Compliant
1N4723 Microchip Technology 600 V 3 A 1 V @ 3 A Standard Recovery > 500ns 25 µA @ 600 V -65°C ~ 175°C Active RoHS non-compliant
1N5190 Microchip Technology 600 V 3 A 1.5 V @ 9 A Fast Recovery ≤ 500ns 400 ns 2 µA @ 600 V -65°C ~ 175°C Active RoHS non-compliant
1N5406-E3/54 Vishay General Semiconductor - Diodes Division 600 V 3 A 1.2 V @ 3 A Standard Recovery > 500ns 5 µA @ 600 V -50°C ~ 150°C Active ROHS3 Compliant
1N5406-E3/73 Vishay General Semiconductor - Diodes Division 600 V 3 A 1.2 V @ 3 A Standard Recovery > 500ns 5 µA @ 600 V -50°C ~ 150°C Active ROHS3 Compliant
1N5406G Taiwan Semiconductor Corporation 600 V 3 A 1 V @ 3 A Standard Recovery > 500ns 5 µA @ 600 V -55°C ~ 150°C Active ROHS3 Compliant
1N5406RLG onsemi 600 V 3 A 1 V @ 3 A Standard Recovery > 500ns 10 µA @ 600 V -65°C ~ 150°C Not For New Designs ROHS3 Compliant
1N5420 Microchip Technology 600 V 3 A 1.5 V @ 9 A Fast Recovery ≤ 500ns 400 ns 1 µA @ 600 V -65°C ~ 175°C Active RoHS non-compliant
31GF6-E3/54 Vishay General Semiconductor - Diodes Division 600 V 3 A 1.6 V @ 3 A Fast Recovery ≤ 500ns 30 ns 20 µA @ 600 V -40°C ~ 150°C Active ROHS3 Compliant
BY253P-E3/54 Vishay General Semiconductor - Diodes Division 600 V 3 A 1.1 V @ 3 A Standard Recovery > 500ns 3 µs 5 µA @ 600 V -55°C ~ 150°C Active ROHS3 Compliant
GI506-E3/54 Vishay General Semiconductor - Diodes Division 600 V 3 A 1.1 V @ 9.4 A Standard Recovery > 500ns 2 µs 5 µA @ 600 V -50°C ~ 150°C Active ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Status, RoHS3 Compliant):

The following parts are recommended as direct substitutes based on active product status and RoHS3 compliance alignment:

  • 1N5406-E3/54 and 1N5406-E3/73: Identical voltage and current ratings with standard recovery characteristics. Both are active products with ROHS3 compliance. Forward voltage of 1.2 V @ 3 A is within acceptable range for general-purpose rectification. Operating temperature range of -50°C ~ 150°C matches the RN 4A upper limit.

  • 1N5406G: Taiwan Semiconductor Corporation variant with identical electrical specifications. Active status and ROHS3 compliance. Forward voltage of 1 V @ 3 A provides improved efficiency compared to RN 4A. Operating temperature range of -55°C ~ 150°C is suitable for most applications.

  • BY253P-E3/54: Vishay product with active status and ROHS3 compliance. Forward voltage of 1.1 V @ 3 A and reverse leakage of 5 µA @ 600 V provide excellent performance characteristics. Standard recovery classification is acceptable for non-switching applications.

  • GI506-E3/54: Vishay product with active status and ROHS3 compliance. Forward voltage of 1.1 V @ 9.4 A and reverse leakage of 5 µA @ 600 V. Standard recovery classification suitable for general-purpose rectification.

  • 31GF6-E3/54: Vishay product with active status and ROHS3 compliance. Fast recovery characteristics (trr = 30 ns) match the RN 4A speed classification. Operating temperature range of -40°C ~ 150°C aligns with RN 4A specifications.

Secondary Substitutes (Active Status, RoHS Non-Compliant):

  • 1N5190 and 1N5420: Microchip Technology products with active status. Both feature fast recovery characteristics and extended operating temperature range (-65°C ~ 175°C). RoHS non-compliance status requires evaluation against application requirements.

  • 1N4723: Microchip Technology product with active status. Standard recovery characteristics and extended operating temperature range. RoHS non-compliance status requires evaluation.

Not Recommended for New Designs:

  • 1N5406RLG: onsemi product marked "Not For New Designs" despite active inventory and ROHS3 compliance. Alternative selections are preferred.

Frequently Asked Questions (FAQ)

Q: Can I substitute the RN 4A with any of these parts directly?

A: Yes, all listed substitute parts maintain the same voltage rating (600 V) and current rating (3 A) with through-hole axial packaging. Direct mechanical and electrical substitution is possible. However, compliance requirements (RoHS status) and product lifecycle status (active vs. obsolete) should be evaluated for your specific application.

Q: What is the difference between Fast Recovery and Standard Recovery diodes?

A: Fast Recovery diodes have reverse recovery times (trr) of 500 nanoseconds or less, making them suitable for high-frequency switching applications. Standard Recovery diodes have trr values exceeding 500 nanoseconds and are optimized for line-frequency rectification. The RN 4A is a Fast Recovery device (trr = 100 ns). Standard Recovery substitutes (1N5406 series, BY253P-E3/54, GI506-E3/54) are functionally compatible in general-purpose rectification but may exhibit different switching characteristics in high-frequency circuits.

Q: Why is RoHS compliance important for substitution?

A: RoHS (Restriction of Hazardous Substances) compliance indicates the component meets environmental and safety standards for lead-free manufacturing. The RN 4A is RoHS Compliant. Substitutes with ROHS3 Compliant status (1N5406-E3/54, 1N5406-E3/73, 1N5406G, 31GF6-E3/54, BY253P-E3/54, GI506-E3/54) are preferred for new designs and applications subject to environmental regulations. RoHS non-compliant alternatives (1N4723, 1N5190, 1N5420) require explicit justification.

Q: Are there package differences between substitute parts?

A: All substitute parts are through-hole axial devices. Package designations include DO-201AD, DO-201AA, and DO-27, which are mechanically compatible variants of the axial package. Physical dimensions and lead spacing are standardized across these designations, allowing direct board-level substitution without layout modifications.

Q: What does "Product Status: Obsolete" mean for the RN 4A?

A: Obsolete status indicates the RN 4A is no longer manufactured by Sanken Electric USA Inc. and is not recommended for new designs. Existing inventory may be available, but long-term supply cannot be guaranteed. Substitution with active-status alternatives ensures design continuity and future component availability.

Q: How do forward voltage differences affect circuit performance?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. The RN 4A specifies 1.3 V @ 3 A. Substitutes range from 1 V to 1.6 V @ 3 A. Lower forward voltage reduces power dissipation and heat generation. In rectifier circuits, forward voltage differences of 0.1 to 0.3 V typically have minimal impact on overall circuit performance but should be verified in precision applications or high-current designs.

Q: What is reverse leakage current and why does it vary among substitutes?

A: Reverse leakage current (Ir) is the small current that flows through the diode when reverse-biased. The RN 4A specifies 50 µA @ 600 V. Substitutes range from 1 µA to 25 µA @ 600 V. Lower reverse leakage indicates better diode quality and reduced power loss in the reverse-biased state. Differences in leakage current are generally insignificant in power rectification applications but become important in precision analog circuits and high-impedance applications.

Q: Can I use a substitute with a lower operating temperature range?

A: The RN 4A operates from -40°C to 150°C. Substitutes with identical or extended temperature ranges are preferred. For example, 1N5406-E3/54 operates from -50°C to 150°C, which is acceptable. However, substitutes with narrower ranges (such as those limited to -40°C or lower maximum temperatures) should be evaluated against your application's thermal requirements. Extended temperature ranges (such as -65°C to 175°C) provide additional design margin.

Q: Is the 1N5406 series the best choice for RN 4A replacement?

A: The 1N5406 series (1N5406-E3/54, 1N5406-E3/73, 1N5406G) represents the most widely available and established substitute. All variants are active products with ROHS3 compliance. The 1N5406-E3/73 variant has the highest inventory availability (1895 pcs). These parts are suitable for general-purpose rectification applications. For applications requiring fast recovery characteristics matching the RN 4A, 31GF6-E3/54 is the preferred alternative.

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