RN4987FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4987FE,LF(CT is a pre-biased dual bipolar transistor (BJT) manufactured by Toshiba Semiconductor and Storage, configured as 1 NPN and 1 PNP transistor pair in a single surface mount package. This component operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 100mW power dissipation. The device is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the RN4987FE,LF(CT becomes unavailable due to supply constraints, manufacturing discontinuation, or when alternative sourcing from different manufacturers is required to meet procurement objectives while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Configuration
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Unitless
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250, 200	MHz
Power - Max	100	mW
Mounting Type	Surface Mount	Type
Package / Case	SOT-563, SOT-666	Package
RoHS Status	ROHS3 Compliant	Compliance
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Level

Substitute Part Grouping Explanation

Substitution compatibility for the RN4987FE,LF(CT is determined by the following critical parameters:

Configuration Match: The main part is configured as 1 NPN + 1 PNP (dual complementary pair). Substitute parts must maintain this exact transistor type configuration or provide functionally equivalent dual NPN configuration when application requirements permit.

Electrical Ratings: All substitute parts must meet or exceed the following minimum specifications:

Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base resistor values: R1 = 10kOhms, R2 = 47kOhms (or equivalent bias network)
Transition frequency: 250MHz minimum
Power dissipation: 100mW minimum

Package Compatibility: Surface mount packaging in SOT-563 or SOT-666 case styles ensures mechanical and thermal compatibility with existing PCB layouts.

Compliance Requirements: All substitute parts must maintain ROHS3 compliance and MSL 1 rating to ensure environmental and moisture handling compatibility.

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents: Parts with identical or superior electrical specifications and matching NPN/PNP configuration (EMD4DXV6T1G, EMD4DXV6T5G).

Category B - Functional Equivalents with Configuration Variation: Parts with dual NPN configuration (DDC114EH-7, DDC114TH-7, DDC114YH-7, DDC143EH-7, DDC144EH-7, NSBC114YDXV6T1G, NSBC114YDXV6T5G, NSVBC114YDXV6T1G) that provide equivalent electrical performance within the specified parameter ranges but differ in transistor pair configuration.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce Breakdown (Max) V	R1 (kOhms)	R2 (kOhms)	hFE (Min)	Vce Sat (Max) mV	Ic Cutoff (Max) nA	Freq (MHz)	Power (Max) mW	Package	Status
RN4987FE,LF(CT	Toshiba	1 NPN, 1 PNP	100	50	10	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	500	250, 200	100	SOT-563, SOT-666	Active
DDC114EH-7	Diodes Inc.	2 NPN	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	500	250	150	SOT-563, SOT-666	Active
DDC114TH-7	Diodes Inc.	2 NPN	100	50	10	—	100 @ 1mA, 5V	300 @ 100µA, 1mA	—	250	150	SOT-563, SOT-666	Active
DDC114YH-7	Diodes Inc.	2 NPN	100	50	10	47	68 @ 10mA, 5V	300 @ 250µA, 5mA	500	250	150	SOT-563, SOT-666	Active
DDC143EH-7	Diodes Inc.	2 NPN	100	50	4.7	4.7	20 @ 10mA, 5V	300 @ 500µA, 10mA	500	250	150	SOT-563, SOT-666	Active
DDC144EH-7	Diodes Inc.	2 NPN	100	50	47	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	500	250	150	SOT-563, SOT-666	Active
EMD4DXV6T1G	onsemi	1 NPN, 1 PNP	100	50	47, 10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	—	500	SOT-563, SOT-666	Active
EMD4DXV6T5G	onsemi	1 NPN, 1 PNP	100	50	47, 10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	—	500	SOT-563, SOT-666	Obsolete
NSBC114YDXV6T1G	Fairchild	2 NPN	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	—	500	SOT-563, SOT-666	Active
NSBC114YDXV6T5G	onsemi	2 NPN	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	—	500	SOT-563, SOT-666	Obsolete
NSVBC114YDXV6T1G	onsemi	2 NPN	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500	—	500	SOT-563, SOT-666	Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Matching Configuration)

EMD4DXV6T1G (onsemi) is the preferred direct substitute for the RN4987FE,LF(CT. This part maintains the identical 1 NPN + 1 PNP dual complementary configuration, meets all electrical specifications with superior power dissipation capability (500mW vs. 100mW), and is currently in Active product status. ROHS3 compliance and MSL 1 rating ensure full environmental compatibility. The part is available in high inventory (25,200 units).

Secondary Substitutes (Active Status, Dual NPN Configuration)

When application circuit topology permits use of dual NPN configuration instead of complementary NPN/PNP pair, the following parts provide functional equivalence:

DDC114YH-7 (Diodes Incorporated) offers the closest electrical match to the main part with identical base resistor values (R1 = 10kOhms, R2 = 47kOhms), matching DC current gain specification (68 @ 10mA, 5V vs. 80 @ 10mA, 5V), and identical saturation voltage (300mV). Active status with 24,100 units in inventory.

NSVBC114YDXV6T1G (onsemi) provides equivalent electrical performance with R1 = 10kOhms and R2 = 47kOhms bias network, DC current gain of 80 @ 5mA, 10V, and superior power dissipation (500mW). Active status with 45,300 units in inventory.

NSBC114YDXV6T1G (Fairchild Semiconductor) delivers matching bias resistor configuration and DC current gain specification (80 @ 5mA, 10V) with 500mW power capability. Active status with 53,100 units in inventory.

Avoid in New Designs

EMD4DXV6T5G and NSBC114YDXV6T5G are classified as Obsolete product status and should not be selected for new designs despite adequate electrical specifications and available inventory.

Compliance Verification

All recommended substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, ensuring compatibility with existing supply chain and assembly processes. All parts carry EAR99 ECCN classification.

Frequently Asked Questions (FAQ)

Q: Can DDC114YH-7 replace RN4987FE,LF(CT in all applications?

A: DDC114YH-7 provides functional equivalence for applications where dual NPN configuration is acceptable. The main difference is configuration: RN4987FE,LF(CT contains 1 NPN + 1 PNP pair, while DDC114YH-7 contains 2 NPN transistors. Both parts share identical base resistor values (R1 = 10kOhms, R2 = 47kOhms), similar DC current gain characteristics, and matching saturation voltage. Circuit topology must be evaluated to confirm dual NPN operation is compatible with the intended application.

Q: What is the advantage of EMD4DXV6T1G over the original RN4987FE,LF(CT?

A: EMD4DXV6T1G maintains the identical 1 NPN + 1 PNP complementary configuration and meets all electrical specifications of the RN4987FE,LF(CT. The primary advantage is increased power dissipation capability: 500mW versus 100mW. This provides additional thermal margin in applications with higher power requirements. EMD4DXV6T1G is currently in Active product status with strong inventory availability.

Q: Are all substitute parts available in the same package?

A: All substitute parts listed are available in SOT-563 and SOT-666 package options, ensuring mechanical and thermal compatibility with existing PCB layouts designed for the RN4987FE,LF(CT.

Q: Why should obsolete parts be avoided?

A: Parts classified as Obsolete product status (EMD4DXV6T5G, NSBC114YDXV6T5G) indicate manufacturer discontinuation or end-of-life status. While current inventory may be available, future procurement becomes uncertain. Active status parts ensure long-term supply chain reliability and continued manufacturing support.

Q: How do base resistor values affect substitution compatibility?

A: Base resistor values (R1 and R2) determine the bias network characteristics and switching speed of the pre-biased transistor. The RN4987FE,LF(CT specifies R1 = 10kOhms and R2 = 47kOhms. Substitute parts with identical resistor values (DDC114YH-7, NSVBC114YDXV6T1G, NSBC114YDXV6T1G) provide direct functional equivalence. Parts with different resistor values (DDC114EH-7 with R2 = 10kOhms, DDC143EH-7 with R1 = R2 = 4.7kOhms) alter bias characteristics and require circuit evaluation before substitution.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level. All parts carry EAR99 ECCN classification. These certifications ensure compatibility with environmental regulations, supply chain requirements, and assembly process specifications.

Q: Can transition frequency differences affect substitution?

A: The RN4987FE,LF(CT specifies transition frequency of 250MHz and 200MHz. Most substitute parts specify 250MHz minimum. EMD4DXV6T1G, EMD4DXV6T5G, NSBC114YDXV6T1G, NSBC114YDXV6T5G, and NSVBC114YDXV6T1G do not specify transition frequency in the provided data. For applications requiring specific frequency performance, transition frequency specifications must be verified against detailed datasheets before final part selection.

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