RN4986FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4986FE,LF(CT is a pre-biased dual bipolar transistor (BJT) manufactured by Toshiba Semiconductor and Storage, configured as 1 NPN and 1 PNP transistor pair in a single surface mount package. This component is classified as Active product status and is ROHS3 compliant. The device integrates internal biasing resistors, eliminating the need for external base resistor networks in typical switching and logic applications.

Substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design requirements permit alternative package configurations or transistor configurations (such as dual NPN instead of NPN/PNP pairs).

Substiute Parts

RN4986FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 4697RN4986FE,LF(CT Datasheet

Current PartRFQ

NSBC143ZDXV6T1G

onsemiIn Stock: 3903NSBC143ZDXV6T1G Datasheet

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PEMD13,115

Nexperia USA Inc.In Stock: 4899PEMD13,115 Datasheet

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PEMH13,115

Nexperia USA Inc.In Stock: 8993PEMH13,115 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the RN4986FE,LF(CT is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Maximum collector current: 100 mA
• Maximum collector-emitter breakdown voltage: 50 V
• Base resistor value: 4.7 kOhms
• Emitter-base resistor value: 47 kOhms
• Moisture sensitivity level: 1 (Unlimited)
• RoHS3 compliance

Package Compatibility:

• Surface mount technology
• SOT-563 or SOT-666 package options

Transistor Configuration: Substitutes may differ in transistor configuration (1 NPN/1 PNP versus 2 NPN) provided all electrical parameters remain within specification. Configuration changes require circuit-level verification to ensure functional equivalence in the target application.

Product Status Consideration: Parts marked "Not For New Designs" are acceptable substitutes for existing designs or maintenance applications but should not be selected for new product development.

Parameter Comparison

Engineering Selection Recommendations

For Active Product Status Applications: The NSBC143ZDXV6T1G (onsemi) is the primary substitute for the RN4986FE,LF(CT. Both parts maintain Active product status, ensuring long-term availability and manufacturing support. This part is suitable for new designs and production applications. The NSBC143ZDXV6T1G features dual NPN configuration instead of NPN/PNP; circuit-level compatibility verification is required for applications dependent on complementary transistor pairs.

For Existing Design Maintenance: The PEMD13,115 and PEMH13,115 (Nexperia USA Inc.) are acceptable substitutes for maintenance, repair, and existing production runs. Both parts are marked "Not For New Designs" and should not be selected for new product development. These parts offer improved saturation voltage characteristics (100 mV versus 300 mV) and higher power dissipation capability (300 mW versus 100 mW).

Compliance and Certification: All substitute parts maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage processes. All parts carry EAR99 export classification and are HTSUS 8541.21.0095 classified.

Frequently Asked Questions (FAQ)

Q: Can NSBC143ZDXV6T1G replace RN4986FE,LF(CT in all applications?

A: The NSBC143ZDXV6T1G is electrically compatible for applications requiring 100 mA collector current, 50 V breakdown voltage, and identical biasing resistor values. However, the NSBC143ZDXV6T1G features dual NPN configuration while the RN4986FE,LF(CT features 1 NPN and 1 PNP. Applications requiring complementary transistor pairs must be redesigned or use alternative substitutes with matching NPN/PNP configuration.

Q: What is the difference between SOT-563 and SOT-666 packages?

A: Both packages are available for the RN4986FE,LF(CT and all listed substitutes. Package selection depends on PCB layout requirements and manufacturing equipment capabilities. Electrical performance is identical between package options.

Q: Are PEMD13,115 and PEMH13,115 suitable for new product designs?

A: No. Both parts carry "Not For New Designs" product status. These parts are restricted to maintenance, repair, and existing production applications only. The NSBC143ZDXV6T1G is the recommended substitute for new designs.

Q: What are the key differences in saturation voltage between substitute parts?

A: The RN4986FE,LF(CT specifies 300 mV maximum saturation voltage at 250 µA base current and 5 mA collector current. The PEMD13,115 and PEMH13,115 specify 100 mV maximum saturation voltage at the same test conditions, representing improved switching performance. The NSBC143ZDXV6T1G specifies 250 mV at different test conditions (1 mA base current, 10 mA collector current).

Q: Do all substitute parts have the same biasing resistor values?

A: Yes. All listed substitutes maintain identical base resistor (R1) value of 4.7 kOhms and emitter-base resistor (R2) value of 47 kOhms, ensuring direct functional equivalence in biasing networks.

Q: What is the significance of the 500 nA versus 1 µA collector cutoff current specification?

A: The RN4986FE,LF(CT and NSBC143ZDXV6T1G specify 500 nA maximum collector cutoff current, while PEMD13,115 and PEMH13,115 specify 1 µA. Lower cutoff current indicates reduced leakage in the off state, which may be critical for low-power or precision switching applications.

Q: Can I use PEMH13,115 in place of PEMD13,115?

A: Both parts are manufactured by Nexperia USA Inc. and share identical electrical specifications. The primary difference is transistor configuration: PEMD13,115 features 1 NPN and 1 PNP, while PEMH13,115 features 2 NPN. Configuration compatibility with the target circuit must be verified before substitution.