RN4984,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4984,LF(CT is a pre-biased dual bipolar transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component integrates one NPN and one PNP transistor with internal biasing resistors in a 6-TSSOP (US6) package. The device operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 200mW power dissipation. The RN4984,LF(CT maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design requirements permit functional alternatives that meet the same electrical and mechanical specifications. Substitute selection must maintain compatibility with the application's electrical performance requirements and physical mounting constraints.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	47	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250, 200	MHz
Power - Max	200	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution logic for the RN4984,LF(CT is based on the following critical parameters that must remain constant or within acceptable tolerances:

Mandatory Matching Parameters:

Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Internal base and emitter-base resistor values: 47kOhms each
Surface mount package compatibility: 6-TSSOP, SC-88, SOT-363
RoHS3 compliance
MSL rating: 1 (Unlimited)

Acceptable Variation Parameters:

DC current gain (hFE): Minimum 68 to 80 at specified test conditions
Vce saturation: 150mV to 300mV at specified test conditions
Transition frequency: 187MHz to 250MHz (or unspecified)
Power dissipation: 150mW to 300mW
Transistor configuration: 1 NPN/1 PNP or 2 NPN (functionally equivalent in dual configurations)

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents (1 NPN, 1 PNP Configuration):

PUMD12,115 (Nexperia)
PUMD12,135 (Nexperia)

Category B - Dual NPN Alternatives (2 NPN Configuration):

DCX144EU-7-F (Diodes Incorporated)
DDC144EU-7-F (Diodes Incorporated)
MUN5213DW1T3G (onsemi)
NSVMUN5213DW1T3G (onsemi - Automotive Grade)
PUMH2,115 (NXP Semiconductors)
SMUN5213DW1T1G (onsemi - Automotive Grade)
UMH2N-TP (Micro Commercial Co)

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce(br) (Max) V	R1/R2 kOhms	hFE (Min)	Vce Sat (Max) mV	Ic Cutoff (Max) nA	Freq MHz	Power (Max) mW	Package
RN4984,LF(CT	Toshiba	1 NPN, 1 PNP	100	50	47/47	80	300	500	250, 200	200	US6
DCX144EU-7-F	Diodes Inc.	1 NPN, 1 PNP	100	50	47/47	68	300	500	250	200	SOT-363
DDC144EU-7-F	Diodes Inc.	2 NPN	100	50	47/47	68	300	500	250	200	SOT-363
MUN5213DW1T3G	onsemi	2 NPN	100	50	47/47	80	250	500	—	250	SC-88
NSVMUN5213DW1T3G	onsemi	2 NPN	100	50	47/47	80	250	500	—	250	SC-88
PUMD12,115	Nexperia	1 NPN, 1 PNP	100	50	47/47	80	150	1000	230, 180	300	6-TSSOP
PUMD12,135	Nexperia	1 NPN, 1 PNP	100	50	47/47	80	150	1000	230, 180	300	6-TSSOP
PUMH2,115	NXP	2 NPN	100	50	47/47	80	150	1000	—	300	6-TSSOP
SMUN5213DW1T1G	onsemi	2 NPN	100	50	47/47	80	250	500	—	187	SC-88
UMH2N-TP	Micro Commercial	2 NPN	100	50	47/47	68	300	500	250	150	SOT-363

Engineering Selection Recommendations

Primary Equivalent (Direct Replacement):

The DCX144EU-7-F (Diodes Incorporated) provides the closest functional match to the RN4984,LF(CT. Both devices feature 1 NPN and 1 PNP transistor configuration with identical electrical specifications (100mA Ic, 50V Vce(br), 47kOhm resistors). The DCX144EU-7-F is RoHS3 compliant with MSL 1 rating and maintains 200mW power dissipation. Package compatibility exists across 6-TSSOP, SC-88, and SOT-363 designations. Inventory availability is 17,200 units.

Secondary Equivalents (Functional Alternatives):

The PUMD12,115 and PUMD12,135 (Nexperia) maintain identical transistor configuration (1 NPN, 1 PNP) and electrical parameters with the exception of improved saturation characteristics (150mV vs. 300mV) and higher power rating (300mW vs. 200mW). Both are RoHS3 compliant with MSL 1 rating. PUMD12,115 is available in Cut Tape packaging with 372,100 units in stock; PUMD12,135 is available in Tape & Reel with 9,050 units.

Dual NPN Alternatives (Configuration Change):

Applications requiring dual NPN functionality instead of mixed NPN/PNP configuration may utilize:

SMUN5213DW1T1G (onsemi): 2 NPN configuration, 100mA Ic, 50V Vce(br), 187mW power, AEC-Q101 automotive qualified, 380,300 units available
NSVMUN5213DW1T3G (onsemi): 2 NPN configuration, 100mA Ic, 50V Vce(br), 250mW power, AEC-Q101 automotive qualified, 55,200 units available
MUN5213DW1T3G (onsemi): 2 NPN configuration, 100mA Ic, 50V Vce(br), 250mW power, 10,762 units available
PUMH2,115 (NXP): 2 NPN configuration, 100mA Ic, 50V Vce(br), 300mW power, 8,600 units available

All substitute parts maintain RoHS3 compliance and MSL 1 rating. Selection should be based on application circuit topology (NPN/PNP vs. dual NPN requirement), package form factor availability, and inventory requirements.

Frequently Asked Questions (FAQ)

Q: Can I substitute a dual NPN device (DDC144EU-7-F, SMUN5213DW1T1G) for the RN4984,LF(CT in my application?

A: Substitution is possible only if your circuit topology does not require the PNP transistor functionality. The RN4984,LF(CT provides 1 NPN and 1 PNP transistor. Dual NPN alternatives provide 2 NPN transistors. Circuit redesign may be necessary to accommodate this configuration change. Verify that your application does not depend on PNP transistor characteristics before selecting a dual NPN substitute.

Q: What is the difference between the PUMD12,115 and PUMD12,135?

A: Both parts are functionally identical pre-biased dual transistors (1 NPN, 1 PNP) with 100mA Ic, 50V Vce(br), and 47kOhm internal resistors. The primary difference is packaging: PUMD12,115 is supplied in Cut Tape (CT) & Digi-Reel format with 372,100 units in stock, while PUMD12,135 is supplied in Tape & Reel (TR) format with 9,050 units in stock. Electrical performance is identical.

Q: Are all substitute parts compatible with the 6-TSSOP package footprint?

A: The RN4984,LF(CT uses the US6 package designation, which corresponds to 6-TSSOP. Most substitute parts are available in 6-TSSOP, SC-88, or SOT-363 packages. While these package types are mechanically similar and often interchangeable on PCB layouts, physical verification of pin pitch, body dimensions, and lead configuration is required before board-level substitution. Consult package datasheets for precise dimensional compatibility.

Q: Which substitute parts have automotive qualification?

A: The NSVMUN5213DW1T3G and SMUN5213DW1T1G (both onsemi) carry AEC-Q101 automotive qualification. These parts are suitable for automotive applications requiring formal qualification documentation. All other substitute parts are industrial-grade components without automotive qualification.

Q: What is the significance of the hFE (DC Current Gain) variation between parts?

A: The RN4984,LF(CT specifies hFE minimum of 80 at 10mA, 5V. Substitute parts specify hFE minimum values ranging from 68 to 80 at different test conditions (5mA or 10mA at 5V or 10V). Lower hFE values (68 vs. 80) indicate slightly reduced current amplification. Applications with tight biasing requirements or high-impedance signal sources should verify that the substitute part's hFE meets circuit performance margins. Most general-purpose applications tolerate this variation.

Q: Can I use UMH2N-TP as a direct replacement for RN4984,LF(CT?

A: The UMH2N-TP is a dual NPN device (not 1 NPN/1 PNP) with 100mA Ic and 50V Vce(br). It is electrically compatible for applications requiring dual NPN functionality. However, it is not a direct replacement for circuits designed around the mixed NPN/PNP configuration of the RN4984,LF(CT. Additionally, UMH2N-TP has lower power rating (150mW vs. 200mW) and lower hFE specification (68 vs. 80), which may affect performance in power-sensitive or high-gain applications.

Q: What does RoHS3 compliance mean for these parts?

A: RoHS3 compliance indicates that the component meets Restriction of Hazardous Substances Directive requirements, restricting the use of lead, cadmium, mercury, hexavalent chromium, and certain brominated flame retardants. All listed substitute parts are RoHS3 compliant, ensuring compatibility with environmental regulations and modern manufacturing standards.

Q: How does MSL (Moisture Sensitivity Level) 1 affect component handling?

A: MSL 1 (Unlimited) indicates that the component has unlimited shelf life and requires no special moisture control during storage or handling. This is the least restrictive moisture sensitivity rating. All substitute parts listed carry MSL 1 rating, eliminating the need for dry-pack storage, baking procedures, or time-limited floor life management.

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