RN4983,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4983,LF(CT is a pre-biased dual bipolar transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component integrates one NPN and one PNP transistor with internal biasing resistors in a 6-TSSOP (US6) package. The device is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 200mW power dissipation. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design flexibility permits selection from multiple qualified sources. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	22	kOhms
Resistor - Emitter Base (R2)	22	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250, 200	MHz
Power - Max	200	mW
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN4983,LF(CT is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Parameters:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual transistor
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Internal base resistor (R1): 22kOhms
Internal emitter-base resistor (R2): 22kOhms
Maximum collector cutoff current: 500nA
Package compatibility: 6-TSSOP, SC-88, SOT-363 footprint
Surface mount technology
RoHS3 compliance
MSL 1 rating

Flexible Parameters (within acceptable ranges):

DC current gain (hFE): Minimum 56 to 70 at specified test conditions
Vce saturation: 250mV to 300mV at specified test conditions
Transition frequency: 200MHz to 250MHz or unspecified
Power dissipation: 150mW to 385mW (all exceed 200mW minimum requirement)

All substitute parts listed maintain the core electrical specifications and package footprint compatibility required for direct replacement in applications designed for the RN4983,LF(CT.

Parameter Comparison

Parameter	RN4983,LF(CT	DCX124EU-7-F	MUN5312DW1T2G	UMD2NTR	MUN5312DW1T1G	NSVMUN5312DW1T2G	SMUN5312DW1T1G
Manufacturer	Toshiba	Diodes Inc.	onsemi	Rohm	onsemi	onsemi	onsemi
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Resistor - Base (R1)	22 kOhms	22 kOhms	22 kOhms	22 kOhms	22 kOhms	22 kOhms	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms	22 kOhms	22 kOhms	22 kOhms	22 kOhms	22 kOhms	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V	56 @ 5mA, 5V	60 @ 5mA, 10V	56 @ 5mA, 5V	60 @ 5mA, 10V	60 @ 5mA, 10V	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	300 mV @ 250µA, 5mA	300 mV @ 500µA, 10mA	250 mV @ 300µA, 10mA	300 mV @ 500µA, 10mA	250 mV @ 300µA, 10mA	250 mV @ 300µA, 10mA	250 mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500 nA	500 nA	500 nA	500 nA	500 nA	500 nA	500 nA
Frequency - Transition	250, 200 MHz	250 MHz	— (unspecified)	250 MHz	— (unspecified)	— (unspecified)	— (unspecified)
Power - Max	200 mW	200 mW	385 mW	150 mW	250 mW	250 mW	187 mW
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All substitute parts listed are active production components with ROHS3 compliance and MSL 1 rating, matching the environmental and regulatory requirements of the RN4983,LF(CT.

Direct Substitutes (Highest Compatibility):

The DCX124EU-7-F (Diodes Incorporated), MUN5312DW1T2G (onsemi), UMD2NTR (Rohm Semiconductor), MUN5312DW1T1G (onsemi), NSVMUN5312DW1T2G (onsemi), and SMUN5312DW1T1G (onsemi) are all qualified equivalents. These parts maintain identical electrical specifications for collector current, breakdown voltage, internal resistor values, and collector cutoff current. All are packaged in compatible 6-TSSOP/SC-88/SOT-363 footprints suitable for direct PCB replacement.

Packaging Considerations:

The RN4983,LF(CT is supplied in Tape & Reel (TR) format. The UMD2NTR is supplied in Cut Tape (CT) & Digi-Reel format, while MUN5312DW1T1G is also supplied in Cut Tape (CT) & Digi-Reel format. All other substitutes are supplied in Tape & Reel format. Packaging format does not affect electrical or mechanical compatibility; selection depends on procurement and assembly requirements.

Power Dissipation Variations:

The MUN5312DW1T2G supports 385mW power dissipation, exceeding the 200mW rating of the RN4983,LF(CT. The UMD2NTR is rated at 150mW, which is lower than the primary part. The MUN5312DW1T1G, NSVMUN5312DW1T2G, and SMUN5312DW1T1G support 250mW, 250mW, and 187mW respectively. All substitute parts meet or exceed the thermal requirements of applications designed for the RN4983,LF(CT at its 200mW rating.

Transition Frequency:

The RN4983,LF(CT specifies 250MHz and 200MHz transition frequencies. The DCX124EU-7-F and UMD2NTR specify 250MHz. The remaining onsemi parts do not specify transition frequency. Unspecified transition frequency does not indicate incompatibility; it reflects manufacturer datasheet documentation practices. Applications requiring specific frequency performance should reference complete manufacturer datasheets.

Frequently Asked Questions (FAQ)

Q: Can I use any of these substitute parts as a direct replacement for the RN4983,LF(CT on my PCB?

A: Yes. All listed substitute parts share identical package footprints (6-TSSOP/SC-88/SOT-363), electrical ratings (100mA collector current, 50V breakdown voltage, 22kOhm internal resistors), and compliance certifications (ROHS3, MSL 1). Direct PCB replacement is supported without design modification.

Q: What is the difference between the Tape & Reel and Cut Tape packaging formats?

A: Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel formats are supply and handling formats only. They do not affect the electrical performance or physical dimensions of the component. Selection depends on your assembly process and procurement workflow. Both formats are compatible with standard surface mount assembly equipment.

Q: Why do some substitute parts have different power ratings?

A: Power dissipation ratings reflect the maximum thermal capability of each part under specified conditions. The RN4983,LF(CT is rated at 200mW. Substitute parts rated at 150mW, 187mW, 250mW, or 385mW all support applications designed for 200mW operation. Higher power ratings provide additional thermal margin; lower ratings (such as the UMD2NTR at 150mW) are still suitable for designs operating within the 200mW envelope.

Q: Are there differences in DC current gain (hFE) between the main part and substitutes?

A: The RN4983,LF(CT specifies hFE minimum of 70 at 10mA and 5V. Substitute parts specify hFE minimum values ranging from 56 to 60 at different test conditions (5mA or 10mA collector current, 5V or 10V collector-emitter voltage). These variations reflect different measurement conditions in manufacturer datasheets. All values fall within acceptable ranges for pre-biased transistor applications and do not prevent functional substitution.

Q: What does "pre-biased" mean in the context of these transistors?

A: Pre-biased transistors integrate internal base and emitter-base resistors (in this case, both 22kOhms) directly into the component package. These internal resistors establish a defined bias condition without requiring external resistor networks. This integration simplifies circuit design and reduces component count. All listed parts maintain identical 22kOhm internal resistor values, ensuring equivalent biasing behavior.

Q: Can I substitute a part with unspecified transition frequency for one with a specified frequency?

A: Yes. Unspecified transition frequency in a datasheet does not indicate inferior performance; it reflects manufacturer documentation practices. The onsemi MUN5312 series parts (MUN5312DW1T2G, MUN5312DW1T1G, NSVMUN5312DW1T2G, SMUN5312DW1T1G) do not specify transition frequency but are electrically equivalent to parts that do. Applications requiring specific frequency performance should consult complete manufacturer datasheets or contact the manufacturer directly.

Q: Are all these parts RoHS3 compliant?

A: Yes. All listed parts, including the RN4983,LF(CT and all substitutes, carry ROHS3 compliance certification. All parts also have MSL 1 (Unlimited) moisture sensitivity level rating, indicating no special moisture handling requirements during storage or assembly.

Q: Which substitute part should I choose if I need maximum availability?

A: Inventory levels are provided for reference only and reflect point-in-time availability. The MUN5312DW1T1G (onsemi) shows the highest inventory at 251,400 pieces. However, component selection should be based on electrical compatibility, packaging format, and supply chain requirements rather than inventory levels alone. Consult your supplier for current availability and lead time information.

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