RN4983FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4983FE,LF(CT is a pre-biased dual bipolar transistor manufactured by Toshiba Semiconductor and Storage, configured as 1 NPN and 1 PNP transistor pair in a single surface mount package. This component is classified as Active and is suitable for applications requiring integrated biasing networks in compact form factors. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence within the pre-biased BJT category.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	22	kOhms
Resistor - Emitter Base (R2)	22	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	100	nA
Frequency - Transition	250	MHz
Power - Max	100	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN4983FE,LF(CT is determined by the following critical parameters:

Electrical Equivalence Criteria:

Maximum collector current (100mA)
Maximum collector-emitter breakdown voltage (50V)
Base and emitter-base resistor values (22kOhms each)
Surface mount packaging (SOT-563 or SOT-666)
RoHS3 compliance and MSL Level 1 rating

Functional Configuration: The RN4983FE,LF(CT contains 1 NPN and 1 PNP transistor pair. Substitute parts are grouped into two categories based on internal transistor configuration:

Dual NPN Configuration (2 NPN): NSBC124EDXV6T1G, NSBC124EDXV6T5G, NSVBC124EDXV6T1G, PEMH1,115
Dual Mixed Configuration (1 NPN, 1 PNP): PEMD2,115

Parts within each group share identical electrical ratings for maximum collector current, breakdown voltage, and integrated resistor values. Differences in product status, power dissipation capability, and transition frequency do not prevent functional substitution when electrical requirements are met.

Parameter Comparison

Parameter	RN4983FE,LF(CT	NSBC124EDXV6T1G	NSBC124EDXV6T5G	NSVBC124EDXV6T1G	PEMD2,115	PEMH1,115
Manufacturer	Toshiba	onsemi	onsemi	onsemi	Nexperia USA Inc.	Nexperia USA Inc.
Transistor Type	1 NPN, 1 PNP	2 NPN	2 NPN	2 NPN	1 NPN, 1 PNP	2 NPN
Ic (Max)	100	100	100	100	100	100
Vce Breakdown (Max)	50	50	50	50	50	50
R1 (Base)	22k	22k	22k	22k	22k	22k
R2 (Emitter Base)	22k	22k	22k	22k	22k	22k
hFE (Min) @ Ic, Vce	70 @ 10mA, 5V	60 @ 5mA, 10V	60 @ 5mA, 10V	60 @ 5mA, 10V	60 @ 5mA, 5V	60 @ 5mA, 5V
Vce Saturation (Max)	300 @ 250µA, 5mA	250 @ 300µA, 10mA	250 @ 300µA, 10mA	250 @ 300µA, 10mA	150 @ 500µA, 10mA	150 @ 500µA, 10mA
Icbo (Max)	100	500	500	500	1000	1000
Frequency - Transition	250	—	—	—	—	—
Power - Max	100	500	500	500	300	300
Package	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
Product Status	Active	Active	Obsolete	Last Time Buy	Not For New Designs	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1	1	1	1	1	1

Engineering Selection Recommendations

Primary Substitute (Active Status): NSBC124EDXV6T1G (onsemi) is the recommended substitute for new designs. This part maintains Active product status, matches all critical electrical parameters (100mA collector current, 50V breakdown voltage, 22kOhm integrated resistors), and provides enhanced power dissipation capability (500mW vs. 100mW). Both parts are RoHS3 compliant with MSL Level 1 rating. The primary difference is transistor configuration: NSBC124EDXV6T1G contains 2 NPN transistors, while RN4983FE,LF(CT contains 1 NPN and 1 PNP pair. Selection depends on circuit topology requirements.

Alternative with Matching Configuration: PEMD2,115 (Nexperia USA Inc.) provides identical 1 NPN, 1 PNP configuration to the RN4983FE,LF(CT. This part is marked "Not For New Designs" but remains available with 3835 units in stock. It offers lower saturation voltage (150mV vs. 300mV) and higher power capability (300mW vs. 100mW). RoHS3 and MSL Level 1 compliance are maintained.

Inventory Considerations: NSBC124EDXV6T1G: 4706 units available (Active status) PEMD2,115: 3835 units available (Not For New Designs status) PEMH1,115: 5121 units available (Not For New Designs status)

Parts marked Obsolete (NSBC124EDXV6T5G) or Last Time Buy (NSVBC124EDXV6T1G) should be avoided for new designs despite electrical equivalence.

Frequently Asked Questions (FAQ)

Q: Can NSBC124EDXV6T1G directly replace RN4983FE,LF(CT in all applications?

A: NSBC124EDXV6T1G matches all critical electrical parameters (100mA Ic, 50V Vce breakdown, 22kOhm resistors, SOT-563/SOT-666 packaging). However, the internal configuration differs: NSBC124EDXV6T1G contains 2 NPN transistors while RN4983FE,LF(CT contains 1 NPN and 1 PNP pair. Direct substitution is valid only if the circuit topology does not require the PNP transistor function.

Q: What is the difference between SOT-563 and SOT-666 packages?

A: Both packages are available for these parts and are mechanically and electrically compatible. SOT-563 and SOT-666 are surface mount packages with identical pin configurations for pre-biased transistor pairs. Package selection depends on PCB layout and assembly equipment compatibility.

Q: Why do substitute parts show higher power ratings (300mW to 500mW) compared to the main part (100mW)?

A: Higher power ratings indicate greater thermal capability and do not affect functional substitution. The RN4983FE,LF(CT operates within 100mW maximum dissipation; substitute parts with higher ratings provide additional thermal margin and are fully compatible.

Q: Is PEMD2,115 suitable as a substitute despite "Not For New Designs" status?

A: PEMD2,115 maintains electrical equivalence and RoHS3/MSL Level 1 compliance. The "Not For New Designs" designation indicates manufacturer end-of-life planning but does not prevent functional use. For new designs, NSBC124EDXV6T1G (Active status) is preferred. PEMD2,115 is appropriate for legacy system maintenance or where 1 NPN, 1 PNP configuration is required.

Q: What does the 22kOhm resistor specification mean?

A: Pre-biased transistors integrate internal resistor networks. R1 (Base resistor) and R2 (Emitter-Base resistor) are both 22kOhms in the RN4983FE,LF(CT and all listed substitutes. These resistors establish the biasing network and must match for functional equivalence. Substitutes with different resistor values are not compatible.

Q: Are all listed parts RoHS3 compliant?

A: Yes. All parts in this reference (RN4983FE,LF(CT, NSBC124EDXV6T1G, NSBC124EDXV6T5G, NSVBC124EDXV6T1G, PEMD2,115, PEMH1,115) are RoHS3 compliant with MSL Level 1 (Unlimited moisture sensitivity level).

Q: What is the significance of transition frequency (250MHz) for the main part?

A: The RN4983FE,LF(CT specifies 250MHz transition frequency. Substitute parts do not list transition frequency specifications. This parameter indicates high-frequency capability; absence of specification in substitutes does not indicate lower performance but rather different characterization or test conditions by the manufacturer.

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