RN4982FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4982FE,LF(CT is a pre-biased dual bipolar transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component integrates one NPN and one PNP transistor with internal biasing resistors in a compact ES6 package. The device operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 250MHz transition frequency, suitable for signal switching and amplification applications requiring integrated bias networks.

The RN4982FE,LF(CT maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence in pre-biased transistor configurations.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	100	nA
Frequency - Transition	250	MHz
Power - Max	100	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN4982FE,LF(CT is determined by equivalence in the following critical parameters:

Mandatory Matching Parameters:

Maximum collector current (Ic): 100mA
Maximum collector-emitter breakdown voltage (Vce): 50V
Internal base resistor (R1): 10kOhms
Internal emitter-base resistor (R2): 10kOhms
Surface mount package compatibility (SOT-563 or SOT-666)
RoHS3 compliance
MSL rating of 1 (Unlimited)

Functional Configuration: The RN4982FE,LF(CT contains a 1 NPN, 1 PNP pre-biased dual transistor configuration. Substitute parts may differ in transistor type configuration (2 NPN instead of 1 NPN/1 PNP) provided all electrical parameters remain within specification and package footprint compatibility is maintained.

Secondary Considerations:

DC current gain (hFE) minimum values
Vce saturation voltage
Collector cutoff current (ICBO)
Transition frequency
Maximum power dissipation
Product status and design lifecycle

Substitutes are grouped into two categories: direct functional equivalents with identical 1 NPN/1 PNP configuration, and alternative configurations with 2 NPN transistors that meet all electrical and mechanical requirements.

Parameter Comparison

Parameter	RN4982FE,LF(CT	EMH11T2R	NSBC114EDXV6T1G	NSVBC114EDXV6T1G	PEMD3,115	PEMD3,315	PEMH11,115
Manufacturer	Toshiba	Rohm	onsemi	onsemi	Nexperia	Nexperia	Nexperia
Transistor Type	1 NPN, 1 PNP	2 NPN	2 NPN	2 NPN	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN
Ic (Max)	100	100	100	100	100	100	100
Vce (Max)	50	50	50	50	50	50	50
R1 (Base)	10k	10k	10k	10k	10k	10k	10k
R2 (Emitter-Base)	10k	10k	10k	10k	10k	10k	10k
hFE (Min) @ Ic, Vce	50 @ 10mA, 5V	30 @ 5mA, 5V	35 @ 5mA, 10V	35 @ 5mA, 10V	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V
Vce Saturation (Max)	300 @ 250µA, 5mA	300 @ 500µA, 10mA	250 @ 300µA, 10mA	250 @ 300µA, 10mA	150 @ 500µA, 10mA	150 @ 500µA, 10mA	150 @ 500µA, 10mA
ICBO (Max)	100	500	500	500	1000	1000	1000
Frequency - Transition	250	250	—	—	—	—	—
Power - Max	100	150	500	500	300	300	300
Package	ES6	EMT6	SOT-563	SOT-563	SOT-666	SOT-666	SOT-666
Product Status	Active	Active	Active	Active	Not For New Designs	Not For New Designs	Not For New Designs
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL	1	1	1	1	1	1	1

Engineering Selection Recommendations

Active Product Status Substitutes:

For new designs and ongoing production, the following substitute parts maintain Active product status equivalent to the RN4982FE,LF(CT:

EMH11T2R (Rohm Semiconductor): Active status, 2 NPN configuration, 150mW power rating, 250MHz transition frequency. Suitable for direct replacement in applications where dual NPN configuration is acceptable.
NSBC114EDXV6T1G (onsemi): Active status, 2 NPN configuration, 500mW power rating, enhanced thermal performance. Recommended for applications requiring higher power dissipation margin.
NSVBC114EDXV6T1G (onsemi): Active status, 2 NPN configuration, 500mW power rating. Functionally equivalent to NSBC114EDXV6T1G with identical electrical specifications.

Legacy Product Status Substitutes:

The following parts carry "Not For New Designs" status and are suitable only for replacement in existing production or legacy systems:

PEMD3,115 (Nexperia): 1 NPN, 1 PNP configuration, 300mW power rating. Direct functional equivalent to RN4982FE,LF(CT with identical transistor configuration.
PEMD3,315 (Nexperia): 1 NPN, 1 PNP configuration, 300mW power rating. Functionally equivalent to PEMD3,115.
PEMH11,115 (Nexperia): 2 NPN configuration, 300mW power rating. Alternative configuration for applications not requiring PNP transistor.

Compliance and Certification:

All substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage processes. REACH status is unaffected for all substitute parts.

Configuration Considerations:

Selection between 1 NPN/1 PNP and 2 NPN configurations depends on circuit requirements. The RN4982FE,LF(CT provides complementary transistor pair functionality. Substitutes with 2 NPN configuration (EMH11T2R, NSBC114EDXV6T1G, NSVBC114EDXV6T1G, PEMH11,115) are suitable only for applications requiring dual NPN functionality.

Frequently Asked Questions (FAQ)

Q: Can EMH11T2R replace RN4982FE,LF(CT in all applications?

A: EMH11T2R is electrically compatible with RN4982FE,LF(CT for all specified parameters (Ic, Vce, bias resistors, frequency). However, EMH11T2R contains 2 NPN transistors while RN4982FE,LF(CT contains 1 NPN and 1 PNP. Substitution is valid only if the circuit design does not require the PNP transistor functionality.

Q: What is the difference between NSBC114EDXV6T1G and NSVBC114EDXV6T1G?

A: Both parts are manufactured by onsemi with identical electrical specifications: 2 NPN configuration, 100mA Ic, 50V Vce, 10kOhm bias resistors, and 500mW power rating. Both are suitable as direct substitutes for each other and for RN4982FE,LF(CT in dual NPN applications.

Q: Why are PEMD3,115, PEMD3,315, and PEMH11,115 marked "Not For New Designs"?

A: These parts carry legacy product status from Nexperia, indicating they are in end-of-life phase. They remain available for replacement in existing production but should not be selected for new circuit designs. For new designs, use Active status alternatives: EMH11T2R, NSBC114EDXV6T1G, or NSVBC114EDXV6T1G.

Q: Are package differences between ES6, EMT6, and SOT-563/SOT-666 significant?

A: ES6 and EMT6 are supplier-specific package designations for SOT-563 and SOT-666 footprints respectively. All substitute parts are compatible with standard SOT-563 and SOT-666 PCB layouts. Verify footprint compatibility with your specific board design before substitution.

Q: What is the significance of the 250MHz transition frequency specification?

A: The 250MHz transition frequency indicates the maximum frequency at which the transistor maintains useful gain. RN4982FE,LF(CT and EMH11T2R both specify 250MHz. Substitute parts NSBC114EDXV6T1G and NSVBC114EDXV6T1G do not specify transition frequency but meet all other electrical requirements. For applications requiring guaranteed 250MHz performance, select RN4982FE,LF(CT or EMH11T2R.

Q: How do DC current gain (hFE) differences affect substitution?

A: RN4982FE,LF(CT specifies hFE minimum of 50 @ 10mA, 5V. All substitute parts specify lower hFE minimums (30 @ 5mA, 5V or 35 @ 5mA, 10V). Lower hFE values indicate reduced current gain but remain within acceptable ranges for pre-biased transistor applications. Verify circuit design does not depend on the higher hFE specification of RN4982FE,LF(CT before substitution.

Q: What does MSL 1 (Unlimited) moisture sensitivity rating mean?

A: MSL 1 indicates the component has unlimited shelf life and requires no special moisture control during storage or handling. All listed substitute parts carry identical MSL 1 rating, ensuring compatibility with standard manufacturing processes.

Q: Can I substitute a part with higher power rating (500mW) for the 100mW RN4982FE,LF(CT?

A: Yes. NSBC114EDXV6T1G and NSVBC114EDXV6T1G both provide 500mW power rating, which exceeds the 100mW specification of RN4982FE,LF(CT. Higher power rating provides additional thermal margin and is suitable for direct substitution. The circuit will operate within the lower power envelope of the original design.

Q: Are there any REACH compliance concerns with these substitute parts?

A: All substitute parts list REACH status as "REACH Unaffected," indicating full compliance with REACH regulations. No additional compliance verification is required for substitution.

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