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RN4907,LF Equivalent & Substitute Parts
Part Overview
The RN4907,LF is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 200mW power dissipation. The device is housed in a 6-TSSOP (US6) package and is ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1).
The RN4907,LF is an active product with 18,400 units in current inventory. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence for pre-biased BJT applications requiring dual NPN/PNP or dual NPN configurations.
Substiute Parts
Key Parameters
| Parameter | RN4907,LF Value |
|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) Max | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) Min @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 200MHz |
| Power - Max | 200mW |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitute parts for the RN4907,LF are grouped based on the following substitution criteria:
Primary Substitution Criteria (Mandatory Match):
- Transistor configuration: 1 NPN, 1 PNP - Pre-Biased (Dual) OR 2 NPN - Pre-Biased (Dual)
- Maximum collector current: 100mA
- Maximum collector-emitter breakdown voltage: 50V
- Base resistor (R1): 10kOhms
- Emitter-base resistor (R2): 47kOhms
- Package compatibility: 6-TSSOP, SC-88, SOT-363
- Surface mount technology
- ROHS3 compliance
- MSL 1 rating
Secondary Compatibility Parameters:
- Frequency transition: 200MHz or higher
- Power dissipation: 200mW or higher
- DC current gain (hFE): 80 or higher at specified conditions
- Vce saturation: 300mV or lower at specified conditions
- Current collector cutoff: 500nA or lower
Parts with 2 NPN configuration are included as substitutes where the dual NPN topology can functionally replace the 1 NPN, 1 PNP configuration in applications requiring only NPN switching or amplification stages.
Parameter Comparison
| Part Number | Manufacturer | Transistor Type | Ic (Max) | Vce Breakdown (Max) | R1 (Base) | R2 (Emitter-Base) | Frequency (MHz) | Power (mW) | Package | RoHS |
|---|---|---|---|---|---|---|---|---|---|---|
| RN4907,LF | Toshiba | 1 NPN, 1 PNP | 100mA | 50V | 10kΩ | 47kΩ | 200 | 200 | 6-TSSOP | ROHS3 |
| ACX114YUQ-7R | Diodes Inc. | 1 NPN, 1 PNP | 100mA | 50V | 10kΩ | 47kΩ | 250 | 270 | SOT-363 | ROHS3 |
| ACX114YUQ-13R | Diodes Inc. | 1 NPN, 1 PNP | 100mA | 50V | 10kΩ | 47kΩ | 250 | 270 | SOT-363 | ROHS3 |
| DCX114YU-7-F | Diodes Inc. | 1 NPN, 1 PNP | 100mA | 50V | 10kΩ | 47kΩ | 250 | 200 | SOT-363 | ROHS3 |
| PUMD9,115 | Nexperia | 1 NPN, 1 PNP | 100mA | 50V | 10kΩ | 47kΩ | — | 300 | 6-TSSOP | ROHS3 |
| PUMD9,135 | Nexperia | 1 NPN, 1 PNP | 100mA | 50V | 10kΩ | 47kΩ | — | 300 | 6-TSSOP | ROHS3 |
| PUMD9,165 | Nexperia | 1 NPN, 1 PNP | 100mA | 50V | 10kΩ | 47kΩ | — | 300 | 6-TSSOP | ROHS3 |
| ADC114YUQ-7 | Diodes Inc. | 2 NPN | 100mA | 50V | 10kΩ, 47kΩ | 10kΩ, 47kΩ | 250 | 270 | SOT-363 | ROHS3 |
| ADC114YUQ-13 | Diodes Inc. | 2 NPN | 100mA | 50V | 10kΩ, 47kΩ | 10kΩ, 47kΩ | 250 | 270 | SOT-363 | ROHS3 |
| MUN5214DW1T1G | onsemi | 2 NPN | 100mA | 50V | 10kΩ | 47kΩ | — | 250 | SOT-363 | ROHS3 |
| NSVMUN5214DW1T3G | onsemi | 2 NPN | 100mA | 50V | 10kΩ | 47kΩ | — | 250 | SOT-363 | ROHS3 |
Engineering Selection Recommendations
Direct Equivalents (1 NPN, 1 PNP Configuration):
The following parts provide direct functional equivalence to the RN4907,LF with identical transistor configuration:
-
DCX114YU-7-F (Diodes Incorporated): Matches all critical electrical parameters including 100mA collector current, 50V breakdown voltage, 10kΩ/47kΩ resistor network, and 200mW power rating. Offers higher transition frequency (250MHz vs. 200MHz). ROHS3 compliant with AEC-Q101 automotive qualification. 125,100 units in stock.
-
ACX114YUQ-7R and ACX114YUQ-13R (Diodes Incorporated): Both provide identical electrical specifications with enhanced power rating (270mW) and higher transition frequency (250MHz). AEC-Q101 qualified for automotive applications. 52,980 and 130,100 units respectively in stock.
-
PUMD9,115, PUMD9,135, PUMD9,165 (Nexperia USA Inc.): All three variants maintain 1 NPN, 1 PNP configuration with matching resistor values and 100mA/50V ratings. Offer higher power dissipation (300mW). Available in 6-TSSOP package. 18,200, 10,918, and 2,420 units respectively in stock.
Functional Alternatives (2 NPN Configuration):
The following parts provide functional substitution where dual NPN topology is acceptable:
-
ADC114YUQ-7 and ADC114YUQ-13 (Diodes Incorporated): Dual NPN configuration with identical current and voltage ratings. AEC-Q101 qualified. 2,064 and 21,323 units in stock respectively.
-
MUN5214DW1T1G and NSVMUN5214DW1T3G (onsemi): Dual NPN pre-biased transistors with matching electrical specifications. 513,700 and 10,100 units in stock respectively.
All substitute parts maintain ROHS3 compliance and MSL 1 rating. Selection should be based on package preference (6-TSSOP vs. SOT-363), availability requirements, and application-specific needs for NPN/PNP versus dual NPN topology.
Frequently Asked Questions (FAQ)
Q: Can I substitute the RN4907,LF with a dual NPN part like the MUN5214DW1T1G?
A: Substitution is possible only if your application requires dual NPN switching or amplification stages. The RN4907,LF provides one NPN and one PNP transistor, while the MUN5214DW1T1G provides two NPN transistors. If your circuit design requires complementary NPN/PNP functionality, dual NPN parts are not suitable. If your design uses only the NPN section or can be redesigned for dual NPN operation, these parts are electrically compatible.
Q: What is the difference between ACX114YUQ-7R and ACX114YUQ-13R?
A: Both parts are electrically identical with matching specifications for collector current (100mA), breakdown voltage (50V), resistor values (10kΩ/47kΩ), and power rating (270mW). The suffix difference (-7R vs. -13R) indicates different manufacturing date codes or tape reel configurations. Both are AEC-Q101 qualified and ROHS3 compliant. Selection between them depends on inventory availability and specific procurement requirements.
Q: Are the PUMD9 variants (115, 135, 165) interchangeable?
A: Yes. PUMD9,115, PUMD9,135, and PUMD9,165 are functionally identical with matching electrical specifications. All provide 1 NPN, 1 PNP configuration, 100mA/50V ratings, and 10kΩ/47kΩ resistor networks. The numeric suffix indicates different packaging or tape reel specifications. Selection is based on availability and procurement preferences.
Q: Why does the RN4907,LF specify 200MHz transition frequency while some substitutes offer 250MHz?
A: The transition frequency specification indicates the maximum frequency at which the transistor maintains useful gain. The RN4907,LF operates at 200MHz, while substitutes like DCX114YU-7-F and ACX114YUQ series operate at 250MHz. Higher transition frequency provides additional performance margin and is backward compatible with applications designed for 200MHz operation. This represents an enhancement rather than a limitation.
Q: Can I use PUMD9,115 (Cut Tape packaging) in place of RN4907,LF (Tape & Reel)?
A: Electrically, yes. Both parts are functionally equivalent with identical specifications. However, PUMD9,115 is supplied in Cut Tape (CT) & Digi-Reel packaging while RN4907,LF is supplied in standard Tape & Reel (TR). Packaging format affects handling and automated assembly processes. Verify that your procurement and assembly processes support the Cut Tape format before substitution.
Q: What are the key parameters I must verify before substituting the RN4907,LF?
A: Critical parameters for substitution are: (1) Transistor type configuration (1 NPN, 1 PNP vs. 2 NPN), (2) Maximum collector current (100mA), (3) Maximum collector-emitter breakdown voltage (50V), (4) Base resistor value (10kΩ), (5) Emitter-base resistor value (47kΩ), (6) Package type (6-TSSOP or SOT-363), and (7) ROHS3 compliance. All substitute parts listed meet these criteria. Application-specific requirements such as transition frequency, power dissipation margin, or automotive qualification (AEC-Q101) should be evaluated based on circuit design needs.
Q: Is the RN4907,LF still in active production?
A: Yes. The RN4907,LF is listed as an active product with 18,400 units currently in stock. All listed substitute parts are also active products with current inventory availability.
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